US2001004856A1PendingUtilityA1
Aluminum or aluminum alloy sputtering target and method for manufacturing the same
Assignee: KOBE SEIKO SHO AKA KOBE STEELPriority: Feb 23, 1998Filed: Jan 30, 2001Published: Jun 28, 2001
Est. expiryFeb 23, 2018(expired)· nominal 20-yr term from priority
Inventors:Seiji NishiTatsuhiko KusamichiTakashi OnishiMasao MizunoTeruyuki TakaharaToshihisa SuemitsuKazuo Yoshikawa
C23C 14/34C23C 14/3414B22F 2999/00B22F 3/115
34
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
The sputtering target is manufactured by adjusting the ratio of the gas flow volume (Nm 3 )/molten liquid flow mass (kg) to 5 Nm 3 /kg or more in the gas atomizing step of the spray forming method using an Al or Al alloy sputtering target material in which the maximum length of all the inclusions is 20 μm or less.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method for manufacturing an aluminum or aluminum alloy sputtering target material comprising aluminum or aluminum alloy containing inclusions having a maximum length of 20 μm, wherein the ratio of the gas volume (Nm 3 )/the liquid mass (kg) is 5 Nm 3 /kg or more in a spray forming method including the step of obtaining an aluminum or aluminum alloy ingot by a gas atomizing step of a molten liquid having aluminum or aluminum alloy.
2 . A method for manufacturing an aluminum or aluminum alloy sputtering target material according to claim 1 , wherein the ratio of the gas volume (Nm 3 )/the liquid mass (kg) is adjusted to be 10 Nm 3 /kg or more.
3 . A method for manufacturing an aluminum or aluminum alloy sputtering target material according to claim 2 , wherein nitrogen gas is used for atomizing gas in the gas atomizing step.
4 . A method for manufacturing an aluminum or aluminum alloy sputtering target material comprising aluminum or aluminum alloy containing inclusions having a maximum length of 20 μm comprises:
melting an material having aluminum or aluminum alloy ingot into a liquid flow;
atomizing a gas flow;
spraying the liquid flow onto a surface by means of said gas flow, wherein the ratio of the gas flow volume (Nm 3 )/the liquid flow mass (kg) is 5 Nm 3 /kg or more; and
depositing on said surface an aluminum or aluminum alloy sputtering target material comprising aluminum or aluminum alloy containing inclusions having a maximum length of 20 μm.
5 . A method for manufacturing an aluminum or aluminum alloy sputtering target material according to claim 4 , wherein the ratio of the gas flow volume (Nm 3 )/the liquid flow mass (kg) is adjusted to be 10 Nm 3 /kg or more.
6 . A method for manufacturing an aluminum or aluminum alloy sputtering target material according to claim 5 , wherein nitrogen gas is used for the gas flow.
7 . A method for manufacturing an aluminum or aluminum alloy sputtering target material comprising aluminum or aluminum alloy containing inclusions having a maximum length of 10 μm comprises:
melting an material having aluminum or aluminum alloy ingot into a liquid flow;
atomizing a gas flow;
spraying the liquid flow onto a surface by means of said gas flow, wherein the ratio of the gas flow volume (Nm 3 )/the liquid flow mass (kg) is 5 Nm 3 /kg or more; and
depositing on said surface an aluminum or aluminum alloy sputtering target material comprising aluminum or aluminum alloy containing inclusions having a maximum length of 10 μm.
8 . A method for manufacturing an aluminum or aluminum alloy sputtering target material according to claim 7 , wherein the ratio of the gas flow volume (Nm 3 )/the liquid flow mass (kg) is adjusted to be 10 Nm 3 /kg or more.
9 . A method for manufacturing an aluminum or aluminum alloy sputtering target material according to claim 8 , wherein nitrogen gas is used for the gas flow.Join the waitlist — get patent alerts
Track US2001004856A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.