US2001002279A1PendingUtilityA1
Low pressure vapor phase deposition of organic thin films
Priority: Nov 17, 1997Filed: Dec 13, 2000Published: May 31, 2001
Est. expiryNov 17, 2017(expired)· nominal 20-yr term from priority
C23C 14/12C23C 14/50H10K 71/40H10K 71/00C23C 14/26C23C 14/568C23C 16/45561C23C 16/4482C23C 16/30Y10S261/65C23C 14/54H10K 85/324H10K 71/164H10K 71/10H10K 85/631
46
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
Methods for preparing organic thin films on substrates, the method comprising the steps of providing a plurality of organic precursors in the vapor phase, and reacting the plurality or organic precursors at a sub-atmospheric pressure. Also included are thin films made by such a method and apparatuses used to conduct such a method. The method is well-suited to the formation of organic light emitting devices and other display-related technologies.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method for preparing an organic thin film on a substrate, said method comprising the steps of:
providing a plurality of organic precursors, said organic precursors being in the vapor phase; and reacting said plurality of organic precursors at a sub-atmospheric pressure in the presence of said substrate to form said thin film on said substrate.
2 . The method of claim 1 , wherein said substrate is located in a reaction chamber.
3 . The method of claim 2 , further comprising the step of transporting one of said plurality of organic precursors into said reaction chamber prior to said step of reacting.
4 . The method of claim 3 , wherein said step of transporting includes the step of using an inert gas to carry said transported organic precursor into said reaction chamber.
5 . The method of claim 4 , wherein said inert gas is selected from the group consisting of nitrogen, argon, helium, neon, krypton and xenon.
6 . The method of claim 1 , wherein at least one of said plurality of organic precursors is selected from the group consisting of MT, DASI, MM, M f M, DASTh, MeOSI, DAS(Et)I, DAS(Et)OH, acetyl toluenesulfonate, MA f , TTF, TCNQ, DCM, Alq 3 , TPP, TPD, α-NPD, MTDATA, and (Alq 2 )′-OPh.
7 . The method of claim 3 , further comprising the step of volatilizing said transported organic precursor prior to said step of transporting.
8 . The method of claim 7 , wherein:
said step of volatilizing includes the step of loading said transported organic precursor into a bubbler; and said step of transporting includes the step of passing an inert gas through said bubbler for carrying said transported organic precursor into said reaction chamber.
9 . The method of claim 7 , wherein:
said step of volatilizing includes the steps of placing said transported organic precursor into an open container and heating said open container; and said step of transporting includes the step of passing an inert gas over said open container for carrying said transported organic precursor into said reaction chamber.
10 . The method of claim 7 , wherein said step of volatilizing includes the steps of:
loading said transported organic precursor into a Knudsen cell, said Knudsen cell extending into said reaction chamber; and heating said Knudsen cell.
11 . The method of claim 1 , wherein the substrate is mounted to a rotating sample holder.
12 . The method of claim 1 , wherein said sub-atmospheric pressure is within the range of about 10 −11 -10 2 torr.
13 . An organic film produced by the method of claim 1 .
14 . The organic film of claim 13 , wherein said film comprises a light emitting material.
15 . The organic film of claim 13 , wherein said film comprises an optically non-linear material.
16 . An apparatus for preparing an organic thin film on a substrate, said apparatus comprising:
a reaction chamber; a heater substantially surrounding said reaction chamber; tubing extending into said reaction chamber; and a vacuum pump attached to said reaction chamber.
17 . The apparatus of claim 16 , wherein said reaction chamber comprises a reactor tube.
18 . The apparatus of claim 16 , wherein said heater is a multi-zone heater/cooler.
19 . The apparatus of claim 16 , wherein said tubing comprises:
a tube having a first end and a second end, the second end of said tube extending into said reaction chamber; and a gas source connected to the first end of said tube.
20 . The apparatus of claim 19 , further comprising an open container located inside of said tube, said open container for holding organic precursor material.
21 . The apparatus of claim 20 , wherein said tube includes a pressure regulator and a valve.
22 . The apparatus of claim 16 , wherein said tubing comprises:
a first tube having a first end and a second end, said second end of said first tube extending into said reaction chamber; a bubbler connected to the first end of said first tube, said bubbler for containing organic precursor material; a second tube having a first end and a second end, said second end of said second tube connected to said bubbler; and a gas source connected to the first end of said second tube.
23 . The apparatus of claim 22 , wherein said second tube includes a pressure regulator and a valve.
24 . The apparatus of claim 16 , further comprising a temperature-control block in contact with the substrate, said temperature-control block having a channel therein.
25 . The apparatus of claim 16 , further comprising a trap attached to said reaction chamber.
26 . The apparatus of claim 16 , further comprising a first roll and a second roll in said reaction chamber for passing the substrate between said first and second rolls.
27 . An apparatus for preparing an organic thin film on a substrate, said apparatus comprising:
a reaction chamber; a Knudsen cell extending into said reaction chamber; a sample holder connected to the substrate; said sample holder being rotatable; and a vacuum pump attached to said reaction chamber.
28 . The apparatus of claim 27 , further comprising tubing extending into said reaction chamber, said tubing comprising:
a first tube having a first end and a second end, said second end of said first tube extending into said reaction chamber; a bubbler connected to the first end of said first tube, said bubbler for containing organic precursor material; a second tube having a first end and a second end, said second end of said second tube connected to said bubbler; and a gas source connected to the first end of said second tube.
29 . The apparatus of claim 27 , wherein said first tube is heated.
30 . The apparatus of claim 27 , further comprising a cooled shroud in said reaction chamber.
31 . The apparatus of claim 27 , further comprising a sensor for detecting the thickness of the thin firm.
32 . The apparatus of claim 31 , wherein said sensor is a quartz crystal.
33 . The apparatus of claim 27 , further comprising a load-lock connected to said reaction chamber.
34 . The apparatus of claim 27 , wherein said vacuum pump is a turbomolecular pump.
35 . The apparatus of claim 27 , further comprising a first roll and a second roll in said reaction chamber for passing the substrate between said first and second rolls.
36 . An apparatus for preparing an organic thin film on a substrate, said apparatus comprising:
a plurality of vacuum chambers, said plurality of vacuum chambers including a loading chamber and an organic layer deposition chamber; and a conveyor belt passing through said plurality of vacuum chambers, said conveyor belt having a substrate thereon.
37 . The apparatus of claim 36 , wherein said organic layer deposition chamber includes a reactant gas distributor.
38 . The apparatus of claim 36 , wherein said organic layer deposition chamber includes a heater.
39 . The apparatus of claim 36 , further comprising a contact deposition chamber.
40 . An apparatus for preparing an organic thin film on a substrate, said apparatus comprising:
a reaction chamber; means for heating said reaction chamber; means for introducing vapors of organic precursor materials into said reaction chamber; and means for reducing the pressure in said reaction chamber to below atmospheric pressure.
41 . A method for preparing an OLED, said method comprising the steps of:
providing a plurality of organic precursors, said organic precursors being in the vapor phase; and reacting said plurality of organic precursors at a sub-atmospheric pressure.
42 . The method of claim 41 , wherein said organic precursors are light emitting materials.
43 . The method of claim 41 , wherein said step of reacting results in the formation of a light emitting material.Join the waitlist — get patent alerts
Track US2001002279A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.