Semiconductor device and method of manufacturing the same

Abstract

In a semiconductor device manufacturing method includes the steps of uniformly applying a first photoresist onto a first layer on a semiconductor substrate, a first resist pattern is formed out of the first photoresist by using a first photomask. The first layer is etched by using the resist pattern, thereby forming a first pattern. A second photoresist is uniformly applied onto the semiconductor substrate where the first pattern is formed. A second resist pattern is formed out of the second photoresist by using a second photomask. The first pattern is etched by using the second photoresist, thereby forming a second pattern constituted by the first layer. A semiconductor device fabricated by this method is also disclosed.

What is claimed is:  
     
         1 . A semiconductor device manufacturing method, comprising the steps of: 
 uniformly applying a first photoresist onto a first layer on a semiconductor substrate;    forming a first resist pattern out of said first photoresist by using a first photomask;    etching said first layer by using said resist pattern, thereby forming a first pattern;    uniformly applying a second photoresist onto said semiconductor substrate where said first pattern is formed;    forming a second resist pattern out of said second photoresist by using a second photomask; and    etching said first pattern by using said second photoresist, thereby forming a second pattern constituted by said first layer.    
     
     
         2 . A method according to    claim 1   , wherein 
 the first photomask has 
 a first region for forming regular patterns in said first layer,  
 a second region that surrounds said first region with a predetermined width and serves to entirely remove said first layer, and  
 a third region that surrounds said second region and serves to entirely leave said first layer, and  
   the second photomask has 
 fourth and fifth regions respectively corresponding to said first and second regions and serving to entirely leave said first layer, and  
 a sixth region corresponding to said third region and serving to entirely remove said first layer.  
   
     
     
         3 . A method according to    claim 2   , wherein the width of said second region is 50 μm to 1,600 μm.  
     
     
         4 . A method according to    claim 2   , wherein said first layer is made of a thermoelectric conversion material.  
     
     
         5 . A method according to    claim 1   , wherein said first layer is directly formed on a second layer having conductivity.  
     
     
         6 . A method according to    claim 5   , wherein 
 said first layer is made of one member selected from the group consisting of titanium and a material containing titanium as a main component, and    said second layer is made of one member selected from the group consisting of aluminum and a material containing aluminum as a main component.    
     
     
         7 . A method according to    claim 2   , wherein 
 the first pattern is constituted by the regular patterns formed on said first region, and said first layer left on said third region, and    the second pattern is constituted by only the regular patterns formed on said first region.    
     
     
         8 . A method according to    claim 2   , wherein 
 said semiconductor device is an infrared sensor having a light-receiving portion constituted by a large number of pixels that are arranged in a matrix, and    the regular patterns are bolometers respectively formed for said pixels.    
     
     
         9 . A semiconductor device fabricated by a method including the steps of: 
 uniformly applying a first photoresist onto a first layer on a semiconductor substrate;    forming a first resist pattern out of said first photoresist by using a first photomask;    etching said first layer by using said resist pattern, thereby forming a first pattern;    uniformly applying a second photoresist onto said semiconductor substrate where said first pattern is formed;    forming a second resist pattern out of said second photoresist by using a second photomask; and    etching said first pattern by using said second photoresist, thereby forming a second pattern constituted by said first layer.