Process of final passivation of an integrated circuit device

Abstract

A process for forming a final passivation layer over an integrated circuit comprises a step of forming, over a surface of the integrated circuit, a protective film by means of High-Density Plasma Chemical Vapor Deposition.

What is claimed is:  
     
         1 . A method for forming a final passivation layer over an integrated circuit, the method comprising a step of forming, over a surface of the integrated circuit, a first protective film by means of High-Density Plasma Chemical Vapor Deposition.  
     
     
         2 . The method of claim I wherein said High-Density Plasma Chemical Vapor Deposition comprises the following steps: 
 placing the integrated circuit into a reaction chamber;    providing a mixture of a dielectric material gas and an inert gas with a gas flow in between 5 to 150 sccm within the reaction chamber, for each gas;    providing a radio-frequency source of power at about 2000 to about 4000 watts within the reaction chamber;    providing a reaction chamber pressure of less than 10 mTorr; and    depositing the passivation layer at a deposition/sputtering ratio of about 2.5:1 to about 8.0:1 to the integrated circuit.    
     
     
         3 . The method of    claim 2    wherein said dielectric material gas includes oxygen, or silicon hydride, or phosphorus, or fluorine, or nitrogen, or any combination thereof.  
     
     
         4 . The method of    claim 2    wherein said inert gas includes argon.  
     
     
         5 . The method of    claim 1   , further comprising a step of providing a second protective film over said first protective film.  
     
     
         6 . The method of    claim 5    wherein said second protective film is formed by Plasma-Enhanced Chemical Vapor Deposition (PECVD) or by Atmospheric Pressure Chemical Vapor Deposition (APCVD).  
     
     
         7 . An integrated circuit device, comprising a passivation layer having a first dielectric film deposited by means of High-Density Plasma Chemical Vapor Deposition.  
     
     
         8 . The device of    claim 7   , further comprising a second dielectric film deposited over the first dielectric film and formed by Plasma-Enhanced CVD or by Atmospheric Pressure CVD.  
     
     
         9 . A method for forming a final passivation layer having a first protective film over an integrated circuit, the method comprising: 
 placing an integrated circuit into a reaction chamber;    providing a mixture of a dielectric material gas and an inert gas within the reaction chamber;    providing a radio-frequency source of power at about 2000 to about 4000 watts within the reaction chamber;    providing a reaction chamber pressure of less than 10 mTorr; and    depositing the first protective film of the passivation layer at a deposition/sputtering ratio of about 2.5:1 to about 8.0:1 to the integrated circuit.    
     
     
         10 . The method of    claim 9    wherein the dielectric material gas includes oxygen, or silicon hydride, or phosphorus, or fluorine, or nitrogen, or any combination thereof.  
     
     
         11 . The method of    claim 9    wherein said inert gas includes argon.  
     
     
         12 . The method of    claim 9   , further comprising a step of providing a second protective film over said first protective film.