Method of making MOS transistor for high-speed operation

Abstract

A MOS transistor for high-speed operation includes a gate insulator formed over a semiconductor substrate and a gate formed over the gate insulator. An insulating layer is formed on both sides of the gate insulator at the edge of the gate and thicker than the gate insulator. The device is also formed with LDD regions which form an LDD structure in the semiconductor substrate at least partially under the gate. The LDD structure defines a channel region under the gate insulator between the LDD regions. In one embodiment, the insulating layer formed on both sides of the gate extends toward the channel region but not beyond the LDD regions. In another embodiment, the insulating layer does extend beyond the LDD region but for a distance of less than 10 nm.

What is claimed is:  
     
         1 . A MOS transistor, comprising: 
 a semiconductor substrate;    a gate insulator formed over the semiconductor substrate;    a gate formed over the gate insulator;    first and second LDD regions defining an LDD structure formed in the semiconductor substrate at least partially under the gate, the LDD structure defining a channel region under the gate insulator between the LDD regions; and    an insulating layer formed on both sides of the gate insulator at the edge of the gate and thicker than the gate insulator, the insulating layer at the edge of the gate extending toward the channel region but not extending beyond the LDD regions.    
     
     
         2 . The MOS transistor of    claim 1   , wherein the insulating layer at the edge of the gate comprises the same material of which the gate insulator is formed.  
     
     
         3 . The MOS transistor of    claim 1   , wherein the insulating layer at the edge of the gate is formed by a gate poly oxidation (GPOX) process.  
     
     
         4 . A method of making a MOS transistor comprising: 
 forming a gate insulator over a semiconductor substrate;    forming a gate over the gate insulator;    forming first and second LDD regions in the semiconductor substrate to define an LDD structure at least partially under the gate, the LDD structure defining a channel region under the gate insulator between the LDD regions; and    forming an insulating layer on both sides of the gate insulator at the edge of the gate and thicker than the gate insulator, such that the insulating layer extends toward the channel region but not beyond the LDD regions.    
     
     
         5 . The method of    claim 4    wherein the insulating layer is formed of the same material of which the gate insulator is formed.  
     
     
         6 . The method of    claim 4    wherein the step of forming an insulating layer comprises performing a gate poly oxidation (GPOX) process.  
     
     
         7 . A MOS transistor, comprising: 
 a semiconductor substrate;    a gate insulator formed over the semiconductor substrate;    a gate formed over the gate insulator;    first and second LDD regions defining an LDD structure formed in the semiconductor substrate at least partially under the gate, the LDD structure defining a channel region under the gate insulator between the LDD regions; and    an insulating layer formed on both sides of the gate insulator at the edge of the gate and thicker than the gate insulator, the insulating layer at the edge of the gate extending toward the channel region, but not extending beyond the LDD regions by a distance of greater than 10 nm.    
     
     
         8 . The MOS transistor of    claim 7   , wherein the insulating layer at the edge of the gate comprises the same material of which the gate insulator is formed.  
     
     
         9 . The MOS transistor of    claim 1   , wherein the insulating layer at the edge of the gate is formed by a gate poly oxidation (GPOX) process.