Magnetoresistive (MR) sensor element with sunken lead structure

Abstract

A method for forming a magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a seed layer. There is then formed contacting a pair of opposite ends of the seed layer a pair of patterned conductor lead layer structures. There is then etched, while employing an ion etch method, the seed layer and the pair of patterned conductor lead layer structures to form an ion etched seed layer and a pair of ion etched patterned conductor lead layer structures. Finally, there is then formed upon the ion etched seed layer and the pair of ion etched patterned conductor lead layers structures a magnetoresistive (MR) layered structure. Withip the magnetoresistive (MR) sensor element, the pair of patterned conductor lead layer structures may be formed within a pair of recesses within an ion etch recessed dielectric isolation layer.

What is claimed is:  
     
         1 . A method for forming a magnetoresistive (MR) sensor element comprising: 
 providing a substrate;    forming over the substrate a seed layer;    forming contacting a pair of opposite ends of the seed layer a pair of patterned conductor lead layer structures;    etching, while employing an ion beam etch method, the seed layer and the pair of patterned conductor lead layer structures to form an ion etched seed layer and a pair of ion etched patterned conductor lead layer structures; and    forming upon the ion etched seed layer and the pair of ion etched patterned conductor lead layers structures a magnetoresistive (MR) layered structure.    
     
     
         2 . The method of    claim 1    wherein the pair of patterned conductor lead layer structures is selected from the group consisting of patterned conductor lead layers alone and patterned conductor lead layers laminated with patterned longitudinal magnetic biasing layers.  
     
     
         3 . The method of    claim 1    wherein the magnetoresistive (MR) layered structure is selected from the group consistinig of single stripe magnetoresistive (MR) layered structures, dual stripe magnetoresistive R) layered structures and spin-valve magnetoresistive (SVMR) layered structures.  
     
     
         4 . The method of    claim 1    wherein the seed layer is a patterned seed layer formed from a blanket seed layer while employing as an etch mask a lift off stencil which is employed for forming the pair of patterned conductor lead layer structures contacting the pair of opposite ends of the patterned seed layer.  
     
     
         5 . A method for forming a magnetoresistive (MR) sensor element comprising: 
 providing a substrate;    forming over the substrate a first dielectric isolation layer having a mesa formed therein, the mesa being defined by a pair of recesses within the first dielectric isolation layer separated by the mesa within the first dielectric isolation layer;    forming into the pair of recesses a pair of patterned conductor lead layer structures; and    fondling over substrate and contacting the pair of patterned conductor lead layer structures a magnetoresistive (MR) layered structure.    
     
     
         6 . The method of    claim 5    wherein the pair of patterned conductor lead layer structures is selected from the group consisting of patterned conducto lead layers alone and patterned conductor lead layers laminated ,with patterned longitudinal magnetic biasing layers.  
     
     
         7 . The method of    claim 5    wherein the magnetoresistive (MR) layered structure is selected from the group consisting of single stripe magnetoresislive (MR) layered structures, dual stripe magnetoresistive (MR) layered structures and spin-valve magnetoresistive (SVMR) layered structures.  
     
     
         8 . The method of    claim 5    wherein the pair of recesses within the first dielectric isolation layer is formed while employing as an etch mask a lift of, stencil which is also employed as a lift off mask for forming the pair of patterned conductor lead layer structures within the pair of recesses.  
     
     
         9 . The method of cism  5  further comprising forrmng a patterned seed layer upon and coextensive with the mesa prior to forming the magnetoresistive (MR) layered structure over the substrate, wherein magnetoresistive (MR) layered structure contacts the patterned seed layer in addition to the patterned conductor lead layer structures.  
     
     
         10 . The method of    claim 9    wherein the patterned conductor lead layer structure and the patterned seed layer are ion etched prior to forming the magnetoresistive (MR) layered structure upon the patterned conductor lead layer structure and the patterned seed layer.