PNP lateral bipolar electronic device

Abstract

A lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other NPN bipolar devices capable of being operated at high frequencies. The PNP device is incorporated to an electrically insulated multilayer structure which comprises a semiconductor substrate, doped for conductivity of the P-type, a first buried layer, doped for conductivity of the N-type to provide a base region, and a second layer, overlying the first and having conductivity of the N-type, to provide an active area distinguishable by a P-doped emitter region within the active area being located peripherally and oppositely from a P-doped collector region. The lateral PNP device can be operated at high frequencies with suitable collector current values and good amplification, to provide a superior figure of merit compared to that typical of conventional lateral PNP devices.

What is claimed is:  
     
         1 . A lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other bipolar devices of the NPN type, said device being incorporated to an electrically insulated multilayer structure which comprises: 
 the semiconductor substrate, doped with impurities of the P-type;    a first buried layer, doped with impurities of the N-type to provide a base region; and    a second layer, overlying the first buried layer and having conductivity of the N-type, to provide an active area, wherein within said active area, a P-doped emitter region is located peripherally of the active area at an opposite location from a P-doped collector region.    
     
     
         2 . The lateral PNP bipolar electronic device according to    claim 1   , further comprising an electric contact of the emitter region extending laterally of said active area.  
     
     
         3 . The lateral PNP bipolar electronic device according to    claim 1    wherein the emitter region has a corresponding electric contact extending externally of the electrically insulated multilayer structure.  
     
     
         4 . The lateral PNP bipolar electronic device according to    claim 1    wherein said emitter region has an essentially rectangular plan form.  
     
     
         5 . The lateral PNP bipolar electronic device according to    claim 4    wherein said emitter region is elongate along one direction to span a full length of the oppositely located collector region along said one direction.  
     
     
         6 . A lateral PNP bipolar device integrated monolithically on a semiconductor substrate, comprising: 
 an N-type active area formed above the semiconductor substrate, the active area including a top side extending from a first lateral end to a second lateral end;    a P-type collector region formed at the top side of the active area; and    a P-type emitter region formed at the top side of the active area and immediately adjacent to the first lateral end of the active area.    
     
     
         7 . The lateral PNP bipolar device of    claim 6    wherein said semiconductor substrate is doped with impurities of the P-type and the lateral PNP bipolar device further includes: 
 a dielectric region for insulating said lateral PNP bipolar device from other devices on the semiconductor substrate, the dielectric region being positioned adjacent to the active region;  
 a buried first layer formed on the semiconductor substrate and doped with N-type impurities to provide a base area; and  
 a second layer formed on the first buried layer and doped with N-type impurities to provide the active area.  
 
     
     
         8 . The lateral PNP bipolar device of    claim 7   , further comprising an emitter contact electrically coupled to the emitter region and positioned opposite to the active region with respect to the dielectric region.  
     
     
         9 . The lateral PNP bipolar device of    claim 6   , further comprising an emitter contact electrically coupled to the emitter region and positioned laterally of the active area.  
     
     
         10 . The lateral PNP bipolar device of    claim 6    wherein said emitter region is substantially a rectangular form.  
     
     
         11 . The lateral PNP bipolar device of    claim 10    wherein said emitter region extends along one direction to a full length of the oppositely located collector region in the one direction.  
     
     
         12 . The lateral PNP bipolar device of    claim 10    wherein the emitter region includes first and second sides, the first side facing a side of the collector region and being longer than the second side.  
     
     
         13 . A method for manufacturing a lateral PNP bipolar device integrated monolithically on a semiconductor substrate, comprising: 
 preparing a semiconductor substrate doped with P-type impurities;    forming dielectric regions to insulate said bipolar device from other devices;    forming a buried first layer doped with N-type impurities for defining a base region;    forming an N-type second layer within the first buried layer to define an active area;    forming a collector region within the active area; and    forming an emitter region peripherally located within the active area and adjacent to one of the dielectric regions, said emitter region extending laterally in the active area in a direction parallel to the collector region.    
     
     
         14 . The method of    claim 13   , further comprising: 
 forming a base contact region in contact with the buried first layer;    forming a collector contact electrically coupled to the collector region; and    forming an emitter contact electrically coupled to the emitter region.    
     
     
         15 . The method of    claim 14    wherein the act of forming an emitter contact includes forming the emitter contact opposite to the active region with respect to the one of the dielectric regions.