Semiconductor device and method of making an interconnect bridge with integrated passive devices

Abstract

A semiconductor device has a first substrate. A first semiconductor die and second semiconductor die are disposed over the substrate. An interconnect bridge is disposed over the first semiconductor die and second semiconductor die. The interconnect bridge has a second substrate. A conductive trace is formed over the second substrate. The conductive trace is electrically coupled from the first semiconductor die to the second semiconductor die. An IPD is also formed over the second substrate. The IPD is electrically coupled between the first semiconductor die and second semiconductor die. An encapsulant is deposited over the first substrate, first semiconductor die, second semiconductor die, and interconnect bridge.

What is claimed: 
     
         1 . A semiconductor device, comprising:
 a first substrate;   a first semiconductor die disposed over the first substrate;   a second semiconductor die disposed over the first substrate;   an interconnect bridge disposed over the first semiconductor die and second semiconductor die, wherein the interconnect bridge includes,
 a second substrate, 
 a conductive trace formed over the second substrate and electrically coupled from the first semiconductor die to the second semiconductor die, 
 a first integrated passive device (IPD) formed over the second substrate and electrically coupled between the first semiconductor die and second semiconductor die, and 
 a second IPD formed over the second substrate, wherein the second IPD is coupled to the first semiconductor die but not the second semiconductor die; and 
   an encapsulant deposited over the first substrate, first semiconductor die, second semiconductor die, and interconnect bridge.   
     
     
         2 . The semiconductor device of  claim 1 , further including:
 a first solder bump disposed between the first semiconductor die and interconnect bridge; and   a second solder bump disposed between the second semiconductor die and interconnect bridge.   
     
     
         3 . The semiconductor device of  claim 1 , wherein the interconnect bridge is hybrid bonded to the first semiconductor die and second semiconductor die. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the second substrate comprises a silicon substrate. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the first IPD includes a resistor, capacitor, or inductor. 
     
     
         6 . A semiconductor device, comprising:
 a first semiconductor die;   a bond wire extending from the first semiconductor die;   a second semiconductor die; and   an interconnect bridge disposed over the first semiconductor die and second semiconductor die, wherein the interconnect bridge includes,
 a substrate, 
 a conductive trace formed over the substrate and electrically coupled from the first semiconductor die to the second semiconductor die, and 
 an integrated passive device (IPD) formed over the substrate and electrically coupled between the first semiconductor die and second semiconductor die. 
   
     
     
         7 . The semiconductor device of  claim 6 , wherein the interconnect bridge is hybrid bonded to the first semiconductor die and second semiconductor die. 
     
     
         8 . The semiconductor device of  claim 6 , further including:
 a first solder bump disposed between the first semiconductor die and interconnect bridge; and   a second solder bump disposed between the second semiconductor die and interconnect bridge.   
     
     
         9 . The semiconductor device of  claim 6 , further including a second IPD formed over the substrate, wherein the second IPD is coupled to the first semiconductor die but not the second semiconductor die. 
     
     
         10 . The semiconductor device of  claim 6 , wherein the substrate comprises a silicon substrate. 
     
     
         11 . The semiconductor device of  claim 6 , wherein the integrated passive device includes a resistor, capacitor, or inductor. 
     
     
         12 . A method of making a semiconductor device, comprising:
 providing a first electrical component;   disposing a second electrical component adjacent to the first electrical component;   forming an interconnect bridge by,
 providing a substrate, 
 forming a conductive trace over the substrate, 
 forming a first integrated passive device (IPD) over the substrate, and 
 forming a second IPD over the substrate, wherein the second IPD is electrically coupled to the first electrical component but not the second electrical component; and 
   disposing the interconnect bridge over the first electrical component and second electrical component.   
     
     
         13 . The method of  claim 12 , further including attaching the interconnect bridge to the first electrical component and second electrical component using hybrid bonding. 
     
     
         14 . The method of  claim 12 , wherein the substrate comprises a silicon substrate. 
     
     
         15 . The method of  claim 12 , wherein the first IPD includes a resistor, capacitor, or inductor. 
     
     
         16 . The method of  claim 12 , further including:
 disposing the first electrical component, second electrical component, and interconnect bridge over a second substrate; and   forming a bond wire from the second substrate to the first electrical component.   
     
     
         17 . A semiconductor device, comprising:
 a first electrical component;   a second electrical component disposed adjacent to the first electrical component; and   an interconnect bridge disposed over the first electrical component and second electrical component, wherein the interconnect bridge includes,
 a substrate, 
 a conductive trace formed over the substrate, 
 a first integrated passive device (IPD) formed over the substrate, and 
 a second IPD formed over the substrate, wherein the second IPD is electrically coupled to the first electrical component but not the second electrical component. 
   
     
     
         18 . The semiconductor device of  claim 17 , wherein the interconnect bridge is attached to the first electrical component and second electrical component using hybrid bonding. 
     
     
         19 . The semiconductor device of  claim 17 , wherein the substrate comprises a silicon substrate. 
     
     
         20 . The semiconductor device of  claim 17 , wherein the first IPD includes a resistor, capacitor, or inductor. 
     
     
         21 . The semiconductor device of  claim 17 , further including:
 a second substrate, wherein the first electrical component, second electrical component, and interconnect bridge are disposed over the second substrate; and   a bond wire formed from the second substrate to the first electrical component.