US12444710B2ActiveUtilityA1

Image sensor package

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Oct 27, 2021Filed: Jun 17, 2022Granted: Oct 14, 2025
Est. expiryOct 27, 2041(~15.3 yrs left)· nominal 20-yr term from priority
Inventors:Seungryong Oh
H10W 90/00H10F 39/811H10F 39/804H01L 25/0655H10W 90/20
48
PatentIndex Score
0
Cited by
13
References
20
Claims

Abstract

An image sensor package includes an image semiconductor chip, and an image sensor in the image semiconductor chip. The package includes a dam structure on a substrate of the image semiconductor chip, and the dam structure includes a plurality of dams. The package includes a glass plate on the dam structure. A top surface of the dam structure and a bottom surface of the glass plate are on a substantially same plane, and the plurality of dams are apart from one another by one or more air gaps.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. An image sensor package comprising:
 an image semiconductor chip, and an image sensor in the image semiconductor chip; 
 a dam structure on a substrate of the image semiconductor chip, the dam structure comprising a plurality of dams; and 
 a glass plate on the dam structure, 
 wherein a top surface of the dam structure and a bottom surface of the glass plate are on a substantially same plane, 
 a bottom surface of the dam structure is on and in contact with an upper surface of the substrate of the image semiconductor chip, and 
 the plurality of dams are apart from one another by one or more air gaps. 
 
     
     
       2. The image sensor package of  claim 1 , wherein a vertical side surface of an outermost dam of the plurality of dam of the dam structure is not aligned with a side surface of the glass plate in a vertical direction, and the vertical side surface is in the glass plate on a first horizontal plane and a second horizontal plane. 
     
     
       3. The image sensor package of  claim 1 , wherein a top surface of the substrate and the bottom surface of the dam structure are on a substantially same plane. 
     
     
       4. The image sensor package of  claim 1 , wherein, in a top-plan view, the dam structure is apart from the image sensor by a certain distance in a horizontal direction, and surrounds all side surfaces of the image sensor. 
     
     
       5. The image sensor package of  claim 1 , wherein a number of the plurality of dams is in a range from ten to fifteen. 
     
     
       6. The image sensor package of  claim 1 , wherein the dam structure comprises a photo-imageable dielectric (PID) resin. 
     
     
       7. The image sensor package of  claim 1 , wherein the image sensor package is a wafer level package (WLP). 
     
     
       8. An image sensor package comprising:
 a redistribution layer; 
 a semiconductor chip on the redistribution layer, and an image sensor in the semiconductor chip; 
 a dam structure on a substrate of the semiconductor chip, the dam structure comprising a plurality of dams; 
 a glass plate on the dam structure; 
 an adhesive layer surrounding the dam structure and the glass plate on the substrate; and 
 a plurality of external connection terminals at a bottom surface of the redistribution layer, 
 wherein a top surface of the dam structure and a bottom surface of the glass plate are on a substantially same plane, 
 a bottom surface of the dam structure is on and in contact with an upper surface of the substrate of the semiconductor chip, and 
 the plurality of dams are apart from one another by one or more air gaps. 
 
     
     
       9. The image sensor package of  claim 8 , wherein a portion of a top surface of the adhesive layer comprises a curved surface including a lowermost surface and an uppermost surface. 
     
     
       10. The image sensor package of  claim 8 , wherein a side wall of the adhesive layer is in contact with the dam structure and the glass plate. 
     
     
       11. The image sensor package of  claim 8 , wherein a top surface of the substrate, the bottom surface of the adhesive layer, and the bottom surface of the dam structure are on a substantially same plane. 
     
     
       12. The image sensor package of  claim 9 , wherein the lowermost surface of the curved surface of the top surface of the adhesive layer, the top surface of the dam structure, and the bottom surface of the glass plate are on a substantially same plane. 
     
     
       13. The image sensor package of  claim 8 , wherein the adhesive layer is at an outside of the dam structure. 
     
     
       14. An image sensor package comprising:
 a redistribution layer; 
 an image semiconductor chip on the redistribution layer and comprising a through electrode, wherein an image sensor is in the image semiconductor chip; 
 a dam structure on a substrate of the image semiconductor chip, the dam structure surrounding the image sensor, and comprising a plurality of dams; 
 a glass plate on the dam structure; 
 an adhesive layer surrounding the dam structure and the glass plate on the substrate; and 
 a plurality of external connection terminals at a bottom surface of the redistribution layer, 
 wherein a top surface of the dam structure and a bottom surface of the glass plate are on a substantially same plane, and 
 wherein a bottom surface of the dam structure, a top surface of the substrate, and a bottom surface of the adhesive layer are on a substantially same plane, 
 the bottom surface of the dam structure is on and in contact with an upper surface of the substrate of the image semiconductor chip, and 
 the plurality of dams are apart from each other by one or more air gaps. 
 
     
     
       15. The image sensor package of  claim 14 , wherein a width between two of the plurality of dams is in a range from about 5 μm to about 50 μm. 
     
     
       16. The image sensor package of  claim 14 , wherein a width of at least one of the plurality of dams is in a range from about 5 μm to about 50 μm. 
     
     
       17. The image sensor package of  claim 14 , wherein a height of at least one of the plurality of dams is identical to a width of at least one of the plurality of dams. 
     
     
       18. The image sensor package of  claim 14 , wherein a ratio of a width of the dam structure to a width of the image semiconductor chip is in a range from 1.5% to 3.5%. 
     
     
       19. The image sensor package of  claim 14 , wherein a width of the dam structure is in a range from about 100 μm to about 150 μm. 
     
     
       20. The image sensor package of  claim 14 , wherein a width of at least one of the plurality of dams is equal to a distance between two dams of the plurality of dams.

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