Lithography production method

Abstract

A method for producing a device including a deposition of a first resin layer of lithography above or on a protective layer such that the protective layer is included between a conductive layer and the first resin layer; a first lithography of the first resin layer, the protective layer and the conductive layer; preserving, in at least one preserving area of the first lithography, the superposition of the first resin layer, the protective layer and the conductive layer, and depositing, at least on the at least one preserving area of the first lithography, a second resin layer of lithography without removing the first resin layer; a second lithography of the second resin and the first resin, in particular for the production of electrodes. One of the possible aims is to obtain a device without introducing an impurity into the conductive layer.

The invention claimed is: 
     
       1. A method for producing a device, comprising:
 providing a conductive layer between a substrate and a protective layer; 
 depositing a first lithography resin layer above or on the protective layer such that the protective layer is comprised between the conductive layer and the first resin layer; 
 a first lithography comprising: 
 a) removing, in at least one removal area of the first lithography, the superimposition of the first resin layer, the protective layer and the conductive layer; and 
 b) preserving, in at least one preservation area of the first lithography, the superimposition of the first resin layer, the protective layer and the conductive layer; and 
 depositing, at least on the at least one preservation area of the first lithography, preferably on the at least one removal area and on the at least one preservation area of the first lithography, a second lithography resin layer without removing the first resin layer of the at least one preservation area of the first lithography; and 
 a second lithography comprising: 
 a) removing, in at least one removal area of the second lithography, the superimposition of the second resin, the first resin and the protective layer, but not the conductive layer; and 
 b) preserving, in at least one preservation area of the second lithography, the superimposition of the second resin, the first resin, the protective layer and the conductive layer. 
 
     
     
       2. The method according to  claim 1 , characterized in that the conductive layer comprises or consists of a two-dimensional conductor having a mobility greater than or equal to 1,000 cm 2 ·V −1 s −1 , preferably consisting of a layer of graphene, of silicene, of molybdenum disulfite (MoS 2 ), of germanene, of phosphorene, of stanene, or of borophene. 
     
     
       3. The method according to  claim 1 , characterized in that the first lithography is a positive or negative lithography and the second lithography is a negative or positive lithography respectively, the first resin layer and the second resin layer being constituted by one and the same resin compatible for a positive lithography and for a negative lithography. 
     
     
       4. The method according to  claim 1 , characterized in that the resin of the first resin layer and the resin of the second resin layer are arranged to react, during a lithography step:
 to the same developer, and/or 
 to the same duration, power and wavelength of a preferably ultraviolet radiation. 
 
     
     
       5. The method according to  claim 1 , characterized in that the substrate comprises or consists of silicon and/or silicon oxide. 
     
     
       6. The method according to  claim 1 , characterized in that the protective layer comprises or consists of oxidized aluminium, preferably alumina Al 2 O 3 . 
     
     
       7. The method according to  claim 1 , characterized in that it moreover comprises, in the at least one removal area of the second lithography, depositing at least one electrode in electrical contact with the conductive layer. 
     
     
       8. The method according to  claim 7 , characterized in that it moreover comprises, after the deposition of the at least one electrode, removing, in the at least one preservation area of the second lithography, the superimposition of the second resin and the first resin, but not the conductive layer. 
     
     
       9. The method according to  claim 8 , characterized in that it moreover comprises, after the removal according to  the preceding claim , depositing a passivation layer in contact with the conductive layer of the at least one preservation area of the second lithography and in contact with at least part of each electrode. 
     
     
       10. The method according to  claim 9 , characterized in that the passivation layer comprises a superimposition of two different materials. 
     
     
       11. The method according to  claim 10 , characterized in that the passivation layer comprises a superimposition:
 of Al 2 O 3  in contact with the conductive layer, then 
 of silicon oxide in contact with the Al 2 O 3  of the passivation layer, such that the Al 2 O 3  of the passivation layer is comprised between the conductive layer and the silicon oxide of the passivation layer. 
 
     
     
       12. The method according to  claim 11 , characterized in that the passivation layer has a breakdown field greater than or equal to 10 6  V·m −1 .