SiN film embedding method

Abstract

A SiN film embedding method includes: an operation of adsorbing an aminosilane-based precursor inside a recess formed on a surface of a substrate; an operation of forming a SiN film inside the recess by plasmarizing and supplying a nitrogen gas into the recess to nitride the aminosilane-based precursor; and an operation of forming an adsorption-inhibiting region for the aminosilane-based precursor on an upper portion inside the recess by plasmarizing and supplying a non-halogen gas substantially more to the upper portion than a lower portion inside the recess.

What is claimed is: 
     
       1. A SiN film embedding method comprising:
 an operation of forming an adsorption-inhibiting region, which inhibits an adsorption of an aminosilane-based precursor substantially more on an upper portion than a lower portion inside a recess formed on a surface of a substrate by plasmarizing and supplying a non-halogen gas into the recess; 
 an operation of adsorbing the aminosilane-based precursor inside the recess in which the adsorption-inhibiting region is formed; and 
 an operation of forming a SiN film inside the recess by plasmarizing and supplying a nitrogen gas into the recess to nitride the aminosilane-based precursor. 
 
     
     
       2. The SiN film embedding method of  claim 1 , wherein the non-halogen gas is a NH 3  gas. 
     
     
       3. The SiN film embedding method of  claim 1 , wherein the non-halogen gas is a mixed gas of a N 2  gas and a H 2  gas. 
     
     
       4. The SiN film embedding method of  claim 3 , wherein the aminosilane-based precursor is adsorbed to an entire interior of the recess, so that the SiN film is conformally formed in the entire interior of the recess. 
     
     
       5. The SiN film embedding method of  claim 4 , wherein the non-halogen gas is supplied in a supply rate-limitation mode so that the non-halogen gas is supplied more to the upper portion than the surface of the substrate and the lower portion inside the recess. 
     
     
       6. The SiN film embedding method of  claim 5 , wherein the supply rate-limitation mode is implemented by adjusting a concentration of the non-halogen gas. 
     
     
       7. The SiN film embedding method of  claim 6 , wherein the concentration of the non-halogen gas is adjusted by diluting the non-halogen gas. 
     
     
       8. The SiN film embedding method of  claim 5 , wherein the supply of the non-halogen gas is performed within a processing chamber, and
 wherein the supply rate-limitation mode is implemented by adjusting an internal pressure of the processing chamber. 
 
     
     
       9. The SiN film embedding method of  claim 5 , wherein the supply rate-limitation mode is adjusted by a plasmarization time of the non-halogen gas. 
     
     
       10. The SiN film embedding method of  claim 5 , wherein the supply rate-limitation mode is adjusted by radio frequency power when plasmarizing the non-halogen gas. 
     
     
       11. The SiN film embedding method of  claim 10 , wherein the operation of adsorbing the aminosilane-based precursor inside the recess, the operation of forming the SiN film inside the recess, and the operation of forming the adsorption-inhibiting region on the upper portion inside the recess are periodically repeated. 
     
     
       12. The SiN film embedding method of  claim 11 , wherein the operation of adsorbing the aminosilane-based precursor inside the recess, the operation of forming the SiN film inside the recess, and the operation of forming the adsorption-inhibiting region on the upper portion inside the recess are performed until the SiN film is embedded in the entire interior of the recess. 
     
     
       13. The SiN film embedding method of  claim 12 , further comprising repeating a cycle including the operation of adsorbing the aminosilane-based precursor inside the recess and the operation of forming the SiN film inside the recess a predetermined number of times,
 wherein the operation of forming the adsorption-inhibiting region on the upper portion inside the recess is periodically repeated for each cycle. 
 
     
     
       14. The SiN film embedding method of  claim 11 , comprising: a purge operation of supplying a purge gas to the substrate between the operation of adsorbing the aminosilane-based precursor inside the recess and the operation of forming the SiN film inside the recess, between the operation of forming the SiN film inside the recess and the operation of forming the adsorption-inhibiting region on the upper portion inside the recess, and between the operation of forming the adsorption-inhibiting region on the upper portion inside the recess and the operation of adsorbing the aminosilane-based precursor inside the recess. 
     
     
       15. The SiN film embedding method of  claim 13 , wherein the aminosilane-based precursor is selected from gases including at least one of butylaminosilane, bistert-butylaminosilane, dimethylaminosilane, bisdimethylaminosilane, tridimethylaminesilane, diethylaminosilane, bisdiethylaminosilane, dipropylaminosilane, diisopropylaminosilane, and hexakisethylaminodisilane. 
     
     
       16. The SiN film embedding method of  claim 1 , wherein the aminosilane-based precursor is adsorbed to an entire interior of the recess, so that the SiN film is conformally formed in the entire interior of the recess. 
     
     
       17. The SiN film embedding method of  claim 1 , wherein the non-halogen gas is supplied in a supply rate-limitation mode so that the non-halogen gas is supplied more to the upper portion than the surface of the substrate and the lower portion inside the recess. 
     
     
       18. The SiN film embedding method of  claim 1 , wherein the operation of adsorbing the aminosilane-based precursor inside the recess, the operation of forming the SiN film inside the recess, and the operation of forming the adsorption-inhibiting region on the upper portion inside the recess are periodically repeated.