Systems and methods for shielded inductive devices

Abstract

In an embodiment, a circuit includes: a transformer defining an inductive footprint within a first layer; a grounded shield bounded by the inductive footprint within a second layer separate from the first layer; and a circuit component bounded by the inductive footprint within a third layer separate from the second layer, wherein: the circuit component is coupled with the transformer through the second layer, and the third layer is separated from the first layer by the second layer.

What is claimed is: 
     
       1. An integrated circuit, comprising:
 a transformer defining an inductive footprint formed within a first metallization layer of the integrated circuit; 
 a grounded shield formed within a second metallization layer of the integrated circuit separate from the first metallization layer; and 
 a circuit component formed within a third metallization layer of the integrated circuit separate from the second metallization layer, wherein: 
 the circuit component is coupled with the transformer through the second metallization layer, 
 the third metallization layer is separated from the first layer by the second metallization layer, 
 the circuit component is laterally surrounded by winding structures of the transformer, and 
 the grounded shield is laterally bounded within the inductive footprint. 
 
     
     
       2. The integrated circuit of  claim 1 , wherein the grounded shield comprises a grounded conductive material. 
     
     
       3. The integrated circuit of  claim 1 , wherein the inductive footprint comprises an octagonal shape. 
     
     
       4. The integrated circuit of  claim 1 , wherein the transformer and the circuit component are part of an oscillator or an amplifier. 
     
     
       5. The integrated circuit of  claim 1 , wherein a port of the transformer faces inward from the winding structures of the transformer and interfaces with the circuit component. 
     
     
       6. The integrated circuit of  claim 1 , wherein the transformer comprises at least two connected inductors. 
     
     
       7. The integrated circuit of  claim 1 , wherein the circuit is part of an integrated fan out (InFO) package. 
     
     
       8. An integrated circuit, comprising:
 an inductor defining an inductive footprint within a first metallization layer of the integrated circuit; 
 a grounded shield formed within a second metallization layer of the integrated circuit separate from the first layer; and 
 a circuit component laterally bounded by the inductive footprint so as to be surrounded by an outer perimeter of the inductive footprint, wherein the circuit component is formed within a third metallization layer of the integrated circuit separate from the second metallization layer, wherein: 
 the circuit component is coupled with the inductor, 
 the third metallization layer is separated from the first metallization layer by the second metallization layer, 
 the circuit component is laterally surrounded by winding structures of the inductor, and 
 the grounded shield is laterally bounded within the inductive footprint. 
 
     
     
       9. The integrated circuit of  claim 8 , wherein the first metallization layer is a redistribution metallization layer of an integrated fan out (InFO) package. 
     
     
       10. The integrated circuit of  claim 8 , wherein the circuit component is a buffer, a divider, or a capacitor. 
     
     
       11. The integrated circuit of  claim 8 , wherein the inductor and the circuit component are part of a phase lock loop. 
     
     
       12. The integrated circuit of  claim 8 , wherein the circuit component is an active device. 
     
     
       13. The integrated circuit of  claim 8 , wherein the first metallization layer is above the second metallization layer and the third metallization layer. 
     
     
       14. An integrated circuit, comprising:
 an inductor defining an inductive footprint within a first metallization layer of the integrated circuit; 
 a grounded shield formed within a second metallization layer of the integrated circuit separate from the first metallization layer; and 
 a circuit component laterally bounded by the inductive footprint so as to be surrounded by an outer perimeter of the inductive footprint, wherein the circuit component is formed within a third metallization layer of the integrated circuit separate from the second metallization layer, wherein: 
 the circuit component is coupled with the inductor, 
 the third metallization layer is separated from the first metallization layer by the second metallization layer, 
 the circuit component is laterally surrounded by winding structures of the inductor, and 
 the grounded shield is laterally bounded within the inductive footprint. 
 
     
     
       15. The integrated circuit of  claim 14 , wherein the inductor and the circuit component are part of a frequency synthesizer. 
     
     
       16. The integrated circuit of  claim 14 , wherein a port of the inductor faces inward from the winding structures of the inductor and interfaces with the circuit component. 
     
     
       17. The integrated circuit of  claim 14 , wherein the inductor and the circuit component are part of a phase lock loop that comprises an oscillator or an amplifier. 
     
     
       18. The integrated circuit of  claim 14 , wherein the first metallization layer comprises additional circuit components bound within the inductive footprint. 
     
     
       19. The integrated circuit of  claim 14 , wherein the first metallization layer is below the second metallization layer and the third metallization layer. 
     
     
       20. The integrated circuit of  claim 14 , wherein the circuit component is a buffer, a divider, or a capacitor.