Packaging structure of power semiconductor module

Abstract

The invention discloses a novel packaging structure of a power semiconductor module, which mainly comprises an insulating radiating fin, a metal lead frame unit and a chip unit. The insulating radiating fin comprises an insulating layer, and an inner metal conducting layer and an outer metal conducting layer which are respectively arranged on two sides of the insulating layer; the metal lead frame unit mainly comprises a frame pin input portion, a frame pin output portion and a frame pin signal portion, the frame pin input portion is arranged on an upper side of the inner metal conducting layer in a solder welding mode, and the chip unit is welded to the middle of the inner metal conductive layer. The frame pin output portion is provided with an inner concave portion.

It is claimed: 
     
       1. A novel packaging structure of a power semiconductor module, which mainly comprises an insulating radiating fin, a metal lead frame unit and a chip unit on the insulating radiating fin, wherein the insulating radiating fin comprises an insulating layer, and an inner metal conducting layer and an outer metal conducting layer which are respectively arranged on two sides of the insulating layer; the metal lead frame unit mainly comprises a frame pin input portion, a frame pin output portion and a frame pin signal portion, the frame pin input portion is arranged on an upper side of the inner metal conducting layer in a solder welding mode, and the chip unit is welded to the middle of the inner metal conductive layer, the frame pin output portion is provided with an inner concave portion corresponding to the position of the chip unit and is welded and fixed with the chip unit through an outer end surface of the inner concave portion, a signal portion of the chip unit is connected with the frame pin signal portion through a metal bonding lead; and the insulating radiating fin, the chip unit and the inner concave portion on the frame pin output portion are coated with a plastic package body, and the outer metal conducting layer of the insulating radiating fin is exposed to the plastic package body and is flush with an outer wall of the plastic package body. 
     
     
       2. The novel packaging structure of the power semiconductor module of  claim 1 , wherein the inner concave portion is a groove formed on the frame pin output portion by sinking or extrusion, the groove is matched with the chip unit in number, shape and size, and the groove has a smooth, burr-free outer surface; all the grooves are fully arranged on a wall surface of the frame pin output portion or one of the grooves is arranged on a wall surface of an upper side of the frame pin output portion to form a notch. 
     
     
       3. The novel packaging structure of the power semiconductor module of  claim 1 , wherein the frame pin output portion is provided with an inner concave structure corresponding to the position of the chip unit, the inner concave structure can also be connected to the chip unit by using a high arrangement density metal bonding lead. 
     
     
       4. The novel packaging structure of the power semiconductor module of  claim 1 , wherein the frame pin output portion is provided with a bent edge so that an output pin of the frame pin output portion is flush with an input pin of the frame pin input portion, and etched grooves or round holes are formed on the frame pin input portion and the frame pin output portion for reducing mechanical stress and increasing a bonding force with injection molding materials. 
     
     
       5. The novel packaging structure of the power semiconductor module of  claim 1 , wherein a channel is formed by etching through the inner metal conducting layer of the insulating radiating fin for leading out an electric signal from the chip unit, the signal portion of the chip unit is bonded to an individual channel of the inner metal conducting layer through the metal bonding lead and jumps to the frame pin signal portion for leading out a chip signal. 
     
     
       6. The novel packaging structure of the power semiconductor module of  claim 1 , wherein the inner concave portion is welded to the chip unit by reflow soldering process, and a welding material is a solder having a melting point high than 260° C.; the inner metal conducting layer is welded to the chip unit by silver paste sintering or tin solder welding. 
     
     
       7. The novel packaging structure of the power semiconductor module of  claim 6 , wherein the inner metal conducting layer and the outer metal conducting layer are made of aluminum or a copper material with gold plated on a whole surface; the metal bonding lead is made of an aluminum or copper material. 
     
     
       8. The novel packaging structure of the power semiconductor module of  claim 2 , wherein the frame pin output portion is provided with a bent edge so that an output pin of the frame pin output portion is flush with an input pin of the frame pin input portion, and etched grooves or round holes are formed on the frame pin input portion and the frame pin output portion for reducing mechanical stress and increasing a bonding force with injection molding materials. 
     
     
       9. The novel packaging structure of the power semiconductor module of  claim 2 , wherein the inner concave portion is welded to the chip unit by reflow soldering process, and a welding material is a solder having a melting point high than 260° C.; the inner metal conducting layer is welded to the chip unit by silver paste sintering or tin solder welding. 
     
     
       10. The novel packaging structure of the power semiconductor module of  claim 5 , wherein the inner concave portion is welded to the chip unit by reflow soldering process, and a welding material is a solder having a melting point high than 260° C.; the inner metal conducting layer is welded to the chip unit by silver paste sintering or tin solder welding. 
     
     
       11. The novel packaging structure of the power semiconductor module of  claim 9 , wherein the inner metal conducting layer and the outer metal conducting layer are made of aluminum or a copper material with gold plated on a whole surface; the metal bonding lead is made of an aluminum or copper material. 
     
     
       12. The novel packaging structure of the power semiconductor module of  claim 10 , wherein the inner metal conducting layer and the outer metal conducting layer are made of aluminum or a copper material with gold plated on a whole surface; the metal bonding lead is made of an aluminum or copper material.