Integrated assemblies having thicker semiconductor material along one region of a conductive structure than along another region, and methods of forming integrated assemblies

Abstract

Some embodiments include an integrated assembly having a conductive structure which includes a semiconductor material over a metal-containing material. A stack of alternating conductive levels and insulative levels is over the conductive structure. A partition extends through the stack. The partition has wall regions, and has corner regions where two or more wall regions meet. The conductive structure includes a first portion which extends directly under the corner regions, and includes a second portion which is directly under the wall regions and is not directly under the corner regions. The first portion has a first thickness of the semiconductor material and the second portion has a second thickness of the semiconductor material. The first thickness is greater than the second thickness. Some embodiments include methods of forming integrated assemblies.

I claim: 
     
       1. A method of forming an integrated assembly, comprising:
 forming a conductive structure comprising a semiconductor material, the conductive structure comprising a first portion and a second portion, the first portion comprising a thicker region of the semiconductor material than the second portion; 
 forming a stack of alternating first and second levels over the conductive structure; and 
 forming slits extending through the stack, the formation of the slits forming cavities extending into the first portion under the intersect regions wherein at least one of the cavities is deeper than the second thickness, the slits joining to one another at intersect regions, and the intersect regions being over the first portion of the conductive structure and not over the second portion of the conductive structure. 
 
     
     
       2. The method of  claim 1  wherein the first levels comprise a first composition and the second levels comprise a second composition, the second composition being different than the first composition. 
     
     
       3. The method of  claim 2  wherein, after forming the slits, replacing the first composition with conductive material. 
     
     
       4. The method of  claim 1  further comprising forming insulative material within the slits. 
     
     
       5. The method of  claim 2  wherein the first composition comprises silicon nitride, and wherein the second composition comprises silicon dioxide. 
     
     
       6. The method of  claim 1  wherein the conductive structure comprises a metal-containing material. 
     
     
       7. The method of  claim 6  wherein the semiconductor material is over the metal-containing material.