Semiconductor device and method for fabricating the same

Abstract

A semiconductor device includes: a capacitor disposed over a substrate including a lower electrode, a dielectric layer, and an upper electrode; and a discharge structure spaced apart from the capacitor, connected to the upper electrode of the capacitor, and suitable for discharging, to the substrate, a charge induced from a plasma process for forming the upper electrode of the capacitor.

What is claimed is: 
     
       1. A method for fabricating a semiconductor device, the method comprising:
 providing a substrate which includes a first region and a second region; 
 forming a capacitor of which a lower electrode, a dielectric layer, and an upper electrode are stacked over the first region of substrate; and 
 forming a discharge structure which is spaced apart from the capacitor over the second region of the substrate and connected to the upper electrode of the capacitor, 
 wherein the forming of the discharge structure includes: 
 forming a first diode in the second region of the substrate; 
 forming a discharge contact plug over the first diode; 
 forming a first electrode over the discharge contact plug; and 
 forming a second electrode over the first electrode, 
 wherein the discharge contact plug includes a stacked structure of a semiconductor material and a metal. 
 
     
     
       2. The method according to  claim 1 ,
 wherein the forming of the first electrode is performed simultaneously with the forming of the lower electrode of the capacitor. 
 
     
     
       3. The method according to  claim 1 ,
 wherein the forming of the second electrode is performed simultaneously with the forming of the upper electrode of the capacitor. 
 
     
     
       4. The method according to the  claim 1 , wherein each of the first electrode and the second electrode includes a metal. 
     
     
       5. The method according to the  claim 1 , further comprising
 forming a cell metal line which is connected to the capacitor over the capacitor. 
 
     
     
       6. The method according to the  claim 1 ,
 wherein the substrate further includes a third region, and 
 wherein the forming of the discharge structure further comprising forming a second diode in the third region of the substrate connected to the discharge contact plug.