US11921032B2ActiveUtilityA1
Methods including panel bonding acts and electronic devices including cavities
Est. expiryFeb 5, 2039(~12.5 yrs left)· nominal 20-yr term from priority
Inventors:Horst Theuss
B81B 2201/02B81B 7/0048B81B 7/02B81C 1/00269G01N 21/1702B81C 1/00119G01N 29/2418G01R 33/0286B81C 2203/0118B81C 2203/035G01N 2021/1704G01N 2291/021G01N 29/14G01N 2291/0258B81C 1/00293
79
PatentIndex Score
0
Cited by
34
References
20
Claims
Abstract
A method is disclosed. In one example, the method includes bonding a first panel of a first material to a base panel in a first gas atmosphere, wherein multiple hermetically sealed first cavities encapsulating gas of the first gas atmosphere are formed between the first panel and the base panel. The method further includes bonding a second panel of a second material to at least one of the base panel and the first panel, wherein multiple second cavities are formed between the second panel and the at least one of the base panel and the first panel.
Claims
exact text as granted — not AI-modifiedThe invention claimed is:
1. A device, comprising:
a first cavity formed by a first cap of a first material bonded to a first surface of a base wherein the base is a planar base, wherein the first cavity hermetically seals a first gas and encapsulates a first electronic component, and wherein a portion of the first cavity is defined by the first surface of the base; and
a second cavity formed by a second cap of a second material bonded to a second surface of the base, wherein a second electronic component is disposed in the second cavity, and wherein a portion of the second cavity is defined by the second surface of the base,
wherein the first cap is spaced apart from the second cap.
2. The device of claim 1 , wherein the second cavity is in communication with an environment external to the second cavity.
3. The device of claim 1 , wherein the base comprises a semiconductor material and at least one of the first and second electronic components is integrated in the semiconductor material.
4. The device of claim 1 , wherein the first and second surfaces of the base are opposing surfaces.
5. The device of claim 1 , wherein the first material comprises an airtight material.
6. The device of claim 5 , the first material comprises at least one of a semiconductor material, a glass material, and a ceramic material.
7. The device of claim 1 , wherein the second cavity hermetically seals a second gas and the second electronic component.
8. The device of claim 7 , wherein the first and second surfaces are a same surface of the base.
9. The device of claim 7 , wherein the second material comprises an air tight material.
10. The device of claim 7 , wherein:
the device comprises a photoacoustic gas sensor,
the first electronic component comprises an IR emitter,
the second electronic component comprises a microphone,
the first gas is a protective gas, and
the second gas is a reference gas.
11. The device of claim 1 , wherein the device comprises at least one of a microelectromechanical system, a microfluidic system, a lab-on-a-chip.
12. A device comprising:
a first cavity formed by a first cap of a first material bonded to a first surface of a base wherein the base is a planar base, wherein the first cavity hermetically seals a first gas and encapsulates a first electronic component, and wherein a portion of the first cavity is defined by the first surface of the base; and
a second cavity formed by a second cap of a second material bonded to one of a surface of the base and a surface of the second cap, wherein a second electronic component is disposed in the second cavity,
wherein the first cap is spaced apart from the second cap.
13. The device of claim 12 , wherein the second cap is bonded to the surface of the base, wherein the surface of the base to which the second cap is bonded is a second surface of the base opposite the first surface of the base.
14. The device of claim 13 , wherein the second cavity hermetically seals a second gas and the second electronic component.
15. The device of claim 12 , wherein the second cavity hermetically seals a second gas and the second electronic component.
16. The device of claim 15 , wherein the second cap is bonded to the surface of the base, wherein the surface of the base to which the second cap is bonded is the first surface of the base such that the second cap is disposed laterally adjacent to the first cap.
17. The device of claim 15 , wherein the second cap is bonded to the surface of the first cap, wherein the surface of the first cap to which the second cap is bonded is a surface of the first cap facing away from the base such that the second cap is stacked vertically above the first cap relative to the base.
18. The device of claim 17 , wherein at least one of the base, the first cap, and the second cap include one or more of electrical through connections, electrical redistribution wafers, optical connections, and fluidic connections.
19. A device comprising:
a first cavity formed by a first cap of a first material bonded to a first surface of a base wherein the base is a planar base, wherein the first cavity hermetically seals a first gas and encapsulates a first electronic component, and wherein a portion of the first cavity is defined by the first surface of the base; and
a second cavity formed by a second cap of a second material bonded to a second surface of the base, wherein a second electronic component is disposed in the second cavity, wherein the second cap is spaced from the first cap by a gap or by the base, and wherein the second cavity is a portion of defined by the second surface of the base.
20. The device of claim 19 , wherein the first and second caps are bonded to the base via one of an anodic bond, a solder bond, a glue bond, and a metal-to-metal bond.Join the waitlist — get patent alerts
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