Manufacturing method of semiconductor device and semiconductor device

Abstract

According to one embodiment, a manufacturing method of a semiconductor device is provided. The manufacturing method includes removing a portion of an edge region from a front surface of a first substrate to form a notch in the edge region; bonding the front surface of the first substrate and a front surface of a second substrate together to forma stacked substrate, wherein the stack substrate includes an opening at a position corresponding to the notch; and filling the opening with an embedding member.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a first substrate having a front surface; 
 a second substrate having a front surface in contact with the front surface of the first substrate; and 
 an embedding member surrounding an outer edge of the first substrate and having a front surface that contacts the front surface of the second substrate, an inner side surface that contacts the outer edge of the first substrate, and a back surface that extends from the back surface of the first substrate, wherein 
 a first height extending from the back surface of the second substrate to the back surface of the first substrate and a second height extending from the back surface of the second substrate to the back surface of the embedding member are equal to each other, wherein 
 the back surface of the first substrate and the back surface of the embedding member are coplanar with each other. 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein
 the second substrate has a curved end surface, and 
 a portion of the front surface of the embedding member is in contact with the curved end surface of the second substrate. 
 
     
     
       3. The semiconductor device according to  claim 1 , further comprising:
 a protective member that covers the back surface of the first substrate and the back surface of the embedding member. 
 
     
     
       4. The semiconductor device according to  claim 1 , wherein
 a plurality of electrodes are disposed on the back surface of the first substrate. 
 
     
     
       5. The semiconductor device according to  claim 4 , wherein at least a subset of the plurality of electrodes collectively penetrate through the first substrate. 
     
     
       6. The semiconductor device according to  claim 1 , wherein the back surface of the first substrate and the back surface of the embedding member are substantially flat. 
     
     
       7. The semiconductor device according to  claim 1 , wherein the embedding member includes one of an organic adhesive containing a filler or a silica-based inorganic adhesive containing the filler. 
     
     
       8. The semiconductor device according to  claim 7 , wherein the organic adhesive includes one of a urethane resin or an epoxy resin.