Multi-dimensional vertical switching connections for connecting circuit elements

Abstract

A semiconductor device includes a first level having a plurality of transistor devices, and a first wiring level positioned over the first level. The first wiring level includes a plurality of conductive lines extending parallel to the first level, a plurality of conductive vertical interconnects extending perpendicular to the first level, and one or more programmable vertical interconnects that extend perpendicular to the first level and include a programmable material having a modifiable resistivity in that the one or more programmable vertical interconnects change between being conductive and being non-conductive according to a current pattern.

What is claimed is: 
     
       1. A method for forming a semiconductor device, comprising:
 forming a plurality of conductive lines as a part of a first wiring level of the semiconductor device, the first wiring level being positioned over a first level having a plurality of transistor devices, the plurality of conductive lines extending parallel to the first level; 
 forming a programmable vertical bridge that is positioned below the plurality of conductive lines and extends perpendicular to the first level, the programmable vertical bridge physically connecting a first conductive line of the plurality of conductive lines in the first wiring level, the programmable vertical bridge being formed based on a first material that changes phase between a conductive state and a non-conductive state according to a current pattern delivered to the programmable vertical bridge; and 
 forming a first conductive vertical bridge that is positioned below the plurality of the conductive lines and extends perpendicular to the first level, the first conductive vertical bridge being spaced apart from the programmable vertical bridge and physically connecting a second conductive line of the plurality of the conductive lines, wherein forming the programmable vertical bridge comprises:
 forming a first relief pattern in a dielectric material positioned over a substrate, the first relief pattern having a plurality of vertical openings; 
 depositing the first material to fill the vertical openings of the first relief pattern; 
 covering a portion of the first material that fills one of the plurality of vertical openings by a first mask to form the programmable vertical bridge; 
 removing a uncovered portion of the first material that fills other vertical openings of the plurality of vertical openings; 
 removing the first mask; and 
 filling the other vertical openings of the plurality of vertical openings with a conductive material to form a plurality of conductive vertical interconnects that includes the first conductive vertical bridge. 
 
 
     
     
       2. The method of  claim 1 , wherein the first material is deposited in a crystalline state. 
     
     
       3. The method of  claim 1 , wherein the first material is deposited in an amorphous state. 
     
     
       4. A method for forming a semiconductor device, comprising:
 forming a plurality of conductive lines as a part of a first wiring level of the semiconductor device, the first wiring level being positioned over a first level having a plurality of transistor devices, the plurality of conductive lines extending parallel to the first level; 
 forming a programmable vertical bridge that is positioned below the plurality of conductive lines and extends perpendicular to the first level, the programmable vertical bridge physically connecting a first conductive line of the plurality of conductive lines in the first wiring level, the programmable vertical bridge being formed based on a first material that changes phase between a conductive state and a non-conductive state according to a current pattern delivered to the programmable vertical bridge; and 
 forming a first conductive vertical bridge that is positioned below the plurality of the conductive lines and extends perpendicular to the first level, the first conductive vertical bridge being spaced apart from the programmable vertical bridge and physically connecting a second conductive line of the plurality of the conductive lines, wherein forming the programmable vertical bridge comprises:
 uncovering one vertical opening and covering other vertical openings of a plurality of vertical openings in a first relief pattern that is formed in a dielectric material over a substrate; 
 depositing the first material in the uncovered vertical opening; 
 
 removing a portion of the first material in the uncovered vertical opening so that the first material is partially filled in the uncovered vertical opening;
 uncovering the other vertical openings of the plurality of vertical openings; and 
 depositing a conductive material in the other vertical openings to form a plurality of conductive vertical interconnects that includes the first conductive vertical bridge and in the uncovered vertical opening so that the uncovered opening is partially filled with the first material and partially filled with the conductive material to form the programmable vertical bridge. 
 
 
     
     
       5. A method for operating a semiconductor device, the method comprising:
 accessing the semiconductor device that has a first level including a plurality of transistor devices and a wiring structure positioned over the first level, the wiring structure including a plurality of wiring levels having a plurality of conductive lines and one or more conductive vertical interconnects, the plurality of conductive lines extending parallel to the first level and the one or more conductive vertical interconnects extending perpendicular to the first level, each of the one or more conductive vertical interconnects being connect to a respective conductive line, the wiring structure further including a first programmable vertical bridge that extends perpendicular to the first level, the first programmable vertical bridge being formed based on a programmable material having a modifiable resistivity in that the first programmable vertical bridge changes between being in a first molecular structure which is conductive and being in a second molecular structure which is non-conductive; and 
 identifying a specific circuit function to operate the first programmable vertical bridge accordingly by transmitting a current pattern to the first programmable vertical bridge, wherein: 
 the one or more conductive vertical interconnects includes a first conductive vertical interconnect, 
 the first conductive vertical interconnect is in contact with a first conductive line of the plurality of conductive lines, 
 the first programmable vertical bridge is spaced apart from the first conductive vertical interconnect and in contact with a second conductive line of the plurality of conductive lines that is made of a conductive material, and 
 the first programmable vertical bridge includes (i) a bottom portion made of the programmable material and (ii) a top portion made of the conductive material, disposed on the programmable material, and in direct contact with the second conductive line of the plurality of conductive lines. 
 
     
     
       6. The method of  claim 5 , wherein the first programmable vertical bridge further connects to at least one of a third conductive line of the plurality of conductive lines, a transistor, a capacitor, a resistor, or an inductor. 
     
     
       7. The method of  claim 5 , wherein the identifying indicates one of:
 identifying a first specific circuit function to deactivate the first programmable vertical bridge by transmitting a first current pattern to the first programmable vertical bridge that causes the first programmable vertical bridge to change from being conductive to being non-conductive, such that the specific circuit function is deactivated; 
 identifying a second specific circuit function to activate the first programmable vertical bridge by transmitting a second current pattern to the first programmable vertical bridge that causes the first programmable vertical bridge to change from being conductive to being non-conductive, such that the specific circuit function is activated; 
 identifying a third specific circuit function to deactivate the first programmable vertical bridge by transmitting a third current pattern to the first programmable vertical bridge that causes the first programmable vertical bridge to change from being non-conductive to being conductive, such that the specific circuit function is deactivated; and 
 identifying a fourth specific circuit function to activate the first programmable vertical bridge by transmitting a fourth current pattern to the first programmable vertical bridge that causes the first programmable vertical bridge to change from being non-conductive to being conductive, such that the specific circuit function is activated. 
 
     
     
       8. The method of  claim 5 , wherein the programmable material is positioned at a bottom portion of a second programmable vertical bridge of the wiring structure and the conductive material is positioned over the programmable material to fill the second programmable vertical bridge.