US11798931B2ActiveUtilityA1

Semiconductor package

Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Aug 30, 2021Filed: Aug 30, 2021Granted: Oct 24, 2023
Est. expiryAug 30, 2041(~15.1 yrs left)· nominal 20-yr term from priority
H10W 80/00H10W 90/297H10W 90/295H10W 99/00H10W 72/90H10W 90/00H10W 90/792H10W 90/732H10W 74/111H10W 74/117H01L 25/18H01L 23/3107H01L 24/08H01L 24/32H01L 2224/08145H01L 2224/32145
96
PatentIndex Score
2
Cited by
13
References
20
Claims

Abstract

A semiconductor package including a first die, a second die and a transparent encapsulation material is provided. The first die includes a first substrate and an optical coupler formed on the first substrate. The second die is disposed on the first die and includes a transparent portion overlapping the optical coupler. The transparent encapsulation material is disposed on the first die and laterally encapsulates the second die.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A semiconductor package, comprising:
 a first die comprising a first substrate and an optical coupler formed on the first substrate; 
 a second die disposed on the first die and comprising a second substrate and a transparent portion, the transparent portion overlapping the optical coupler; and 
 a transparent encapsulation material disposed on the first die and laterally encapsulating the second die, the transparent encapsulation material comprising an interface with the second substrate, wherein the transparent portion is spaced apart from the transparent encapsulation material by the second substrate. 
 
     
     
       2. The semiconductor package as claimed in  claim 1 , wherein a material of the transparent portion is the same as a material of the transparent encapsulation material. 
     
     
       3. The semiconductor package as claimed in  claim 1 , wherein a top surface of the transparent portion is coplanar with a top surface of the transparent encapsulation material, the top surface of the transparent portion faces away the first die, and a bottom surface of the transparent portion opposite to the top surface faces the first die. 
     
     
       4. The semiconductor package as claimed in  claim 1 , wherein the transparent portion penetrates through the second substrate from a side adjacent to the first die to an opposite side. 
     
     
       5. The semiconductor package as claimed in  claim 1 , wherein the first die further comprises a wave guide layer disposed on the first substrate and the optical coupler is disposed on the wave guide layer. 
     
     
       6. The semiconductor package as claimed in  claim 1 , further comprising a third die disposed on and electrically connected to the first die. 
     
     
       7. The semiconductor package as claimed in  claim 6 , wherein the transparent encapsulating material laterally encapsulates the third die. 
     
     
       8. The semiconductor package as claimed in  claim 6 , wherein the third die is connected to the first die through a metal-to-metal and insulation-to-insulation_bonding technique. 
     
     
       9. The semiconductor package as claimed in  claim 1 , wherein the second die is connected to the first die through a metal-to-metal and insulation-to-insulation bonding technique. 
     
     
       10. A semiconductor package comprising:
 a first die comprising an optical coupler, a first conductive pad, and a second conductive pad; 
 a second die disposed on the first die and comprising a transparent portion overlapping the optical coupler and a third conductive pad, wherein the third conductive pad is in contact with the first conductive pad, the third conductive pad is fully staggered from the transparent portion in a top view, and the first conductive pad and the third conductive pad are electrically floating; and 
 a third die disposed on the first die and comprising a fourth conductive pad in contact with the second conductive pad. 
 
     
     
       11. The semiconductor package as claimed in  claim 10 , wherein the second die further comprises a substrate and the transparent portion is disposed in the substrate and penetrates through the substrate. 
     
     
       12. The semiconductor package as claimed in  claim 10 , wherein a material of the transparent portion comprises an oxide. 
     
     
       13. The semiconductor package as claimed in  claim 10 , wherein the first die further comprises a first dielectric layer structure surrounding the first conductive pad and the second conductive pad, the second die further comprises a second dielectric layer structure surrounding the third conductive pad, the third die further comprises a third dielectric layer structure surrounding the fourth conductive pad, and the second dielectric layer structure and the third dielectric layer structure are in contact with the first dielectric layer structure. 
     
     
       14. The semiconductor package as claimed in  claim 10 , further comprising a transparent encapsulating material disposed on the first die and laterally surrounds the second die and the third die. 
     
     
       15. A semiconductor package, comprising:
 a first die; 
 a second die disposed on the first die and comprising a first substrate and a transparent portion; and 
 a transparent encapsulation material disposed on the first die and laterally encapsulating the second die, wherein a material of the transparent portion is the same as a material of the transparent encapsulation material, the transparent encapsulation material is in direct contact with a sidewall of the first substrate of the second die, and the transparent portion is separated from the transparent encapsulation material by the first substrate of the second die. 
 
     
     
       16. The semiconductor package as claimed in  claim 15 , wherein the transparent encapsulating material and the transparent portion occupy less than 35% of a total area of the first die in a top view. 
     
     
       17. The semiconductor package as claimed in  claim 15 , wherein a material of the transparent portion comprises an oxide. 
     
     
       18. The semiconductor package as claimed in  claim 15 , wherein a top surface of the transparent portion is coplanar with a top surface of the transparent encapsulation material. 
     
     
       19. The semiconductor package as claimed in  claim 15 , wherein the first die comprises a second substrate, an optical coupler and a wave guide layer, the wave guide layer is disposed on the second substrate and the optical coupler is disposed on the wave guide layer. 
     
     
       20. The semiconductor package as claimed in  claim 19 , wherein the transparent portion overlaps the optical coupler.

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