US11774655B2ActiveUtilityA1

Simultaneous phase and polarization modulation by hybrid metasurface for on-chip polarization filters

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Dec 19, 2019Filed: Aug 27, 2020Granted: Oct 3, 2023
Est. expiryDec 19, 2039(~13.4 yrs left)· nominal 20-yr term from priority
H10F 39/8053H10F 39/8023G02B 5/3025G02B 5/3083H01L 27/14621H04N 23/55G02B 5/3058G02B 5/20G02B 1/02G02B 2207/101
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References
14
Claims

Abstract

A filter for an imaging device includes an array of phase-modulating nanostructures formed on a substrate. At least one phase-modulating nanostructure of the array of phase-modulating nanostructures changes a phase of incident light a predetermined amount based on a first width and a second width of the phase-modulating nanostructure in which the first width is perpendicular to the second width. In one embodiment, the filter focuses light incident on the filter towards a center a pixel of an image sensor at an image plane. In another embodiment, the phase-modulating nanostructure is formed from a material having a refractive index that is greater than 1.9. The filter can also be used to form a quarter-wave plate.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A filter for an imaging device, the filter comprising:
 a substrate; 
 a wire grid, each wire of the wire grid comprising a longitudinal axis that is substantially parallel to longitudinal axes of other wires of the wire grid; and 
 an array of phase-modulating nanostructures formed on the substrate, at least one phase-modulating nanostructure of the array of phase-modulating nanostructures changing a phase of incident light a predetermined amount based on a first width and a second width of the phase-modulating nanostructure, the first width being aligned along a first axis, the second width being aligned along a second axis that is perpendicular to the first axis, and at least one of the first axis and the second axis of the phase-modulating nanostructure being aligned with the longitudinal axis of a corresponding wire of the wire grid. 
 
     
     
       2. The filter of  claim 1 , wherein the phase-modulating nanostructure is formed from a material having a refractive index that is greater than 1.9. 
     
     
       3. The filter of  claim 1 , wherein the phase-modulating nanostructure is formed from at least one of silicon, silicon nitride (Si 3 N 4 ), titanium dioxide (TiO 2 ), gallium nitride (GaN), Zinc oxide (ZnO), hafnium silicate, zirconium silicate, hafnium dioxide or zirconium dioxide. 
     
     
       4. The filter of  claim 1 , wherein the phase-modulating nanostructure inelastically scatters light incident on the filter. 
     
     
       5. The filter of  claim 1 , wherein the filter focuses light incident on the filter towards a center of a pixel on an image sensor at an image plane. 
     
     
       6. The filter of  claim 1 , wherein a field of view of the filter is at least 30 degrees for a normalized intensity of 1. 
     
     
       7. The filter of  claim 1 , wherein the filter comprises a quarter-wave plate. 
     
     
       8. The filter of  claim 1 , wherein the wire grid polarizes light incident on the filter into a predetermined direction. 
     
     
       9. The filter of  claim 8 , wherein the predetermined direction comprises one of a vertical direction, a horizontal direction, a diagonal direction and an anti-diagonal direction. 
     
     
       10. The filter of  claim 8 , wherein the filter is part of a polarizing device that comprises:
 a first polarizing device that polarizes incident light into a first direction; 
 a second polarizing device that polarizes incident light into a second direction, the first and second directions being orthogonal to each other; 
 a third polarizing device that polarizes incident light into a third direction; and 
 a fourth polarizing device that polarizes incident light into a fourth direction, the third and fourth directions being orthogonal to each other and being rotated 45 degrees from the first and second directions. 
 
     
     
       11. A filter for an imaging device, the filter comprising:
 a wire grid, each wire of the wire grid comprising a longitudinal axis that is substantially parallel to longitudinal axes of other wires of the wire grid; and 
 an array of phase-modulating nanostructures formed on the wire grid, at least one phase-modulating nanostructure of the array of phase-modulating nanostructures changing a phase of incident light a predetermined amount based on a first width and a second width of the phase-modulating nanostructure, the first width being aligned along a first axis, the second width being aligned along a second axis that is perpendicular to the first axis, at least one of the first axis and the second axis of the phase-modulating nanostructure being aligned with the longitudinal axis of a corresponding wire of the wire grid, the phase-modulating nanostructure being formed from a material having a refractive index that is greater than 1.9, and a field of view of the filter being at least 30 degrees for a normalized intensity of 1. 
 
     
     
       12. The filter of  claim 11 , wherein the filter focuses light incident on the filter towards a center of a pixel of an image sensor at an image plane. 
     
     
       13. The filter of  claim 11 , wherein the filter comprises a quarter-wave plate. 
     
     
       14. The filter of  claim 11 , wherein the filter is part of a polarizing device that comprises:
 a first polarizing device that polarizes incident light into a first direction; 
 a second polarizing device that polarizes incident light into a second direction, the first and second directions being orthogonal to each other; 
 a third polarizing device that polarizes incident light into a third direction; and 
 a fourth polarizing device that polarizes incident light into a fourth direction, the third and fourth directions being orthogonal to each other and being rotated 45 degrees from the first and second directions.

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