US11748532B1ActiveUtility

Electrothermal co-simulation method, system and terminal for the power electronic system

Assignee: CHENGDU FUJIN POWER SEMICONDUCTOR TECH DEVELOPMENT CO LTDPriority: Apr 24, 2022Filed: Jan 9, 2023Granted: Sep 5, 2023
Est. expiryApr 24, 2042(~15.8 yrs left)· nominal 20-yr term from priority
G06F 30/20G06F 30/367G06F 2119/08G06F 2119/06H03K 3/011G06F 30/32Y02E60/00
85
PatentIndex Score
5
Cited by
9
References
7
Claims

Abstract

The disclosure relates to the field of power electronic technology, and discloses an electrothermal co-simulation method, system and terminal for the power electronic system, comprising the following steps: carrying out electrical simulation on the power semiconductor device and its power circuit, and junction temperature simulation on the power semiconductor device; acquiring real-time electrical parameters in the electrical simulation process; suspending the electrical simulation in a steady state until the steady state of the electrical simulation is changed; and calculating the junction temperature according to the real-time electrical parameters and in combination with the real-time loss of the power semiconductor device in the electrical simulation process. The disclosure dynamically controls the electrical simulation state, thereby reducing the calculation amount in the simulation process and achieving the purpose of accelerating the simulation convergence.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. An electrothermal co-simulation method for a power electronic system, comprising the following steps:
 carrying out electrical simulation of a power semiconductor device and its power circuit, and junction temperature simulation of the power semiconductor device; 
 acquiring real-time electrical parameters in the electrical simulation process; 
 suspending the electrical simulation in a steady state until the steady state of the electrical simulation is changed; and 
 calculating a junction temperature according to the real-time electrical parameters and in combination with a real-time loss of the power semiconductor device in the electrical simulation process; 
 the simulation models corresponding to the electrical simulation and the junction temperature simulation, and a data processing model corresponding to the electrical simulation process under dynamic control are all integrated on a system-level simulation platform, which facilitates a control of the three models and ensures that the three models perform electrothermal co-simulation at the same time; 
 wherein the step of suspending the electrical simulation in the steady state until the steady state of the electrical simulation is changed specifically to reduce workload of the system-level simulation platform includes: 
 determining whether the electrical simulation is in steady state according to the real-time electrical parameters; 
 if no, continuing the electrical simulation; and 
 if yes, suspending the electrical simulation and maintaining the electrical parameters in the steady state, and then continuing the junction temperature simulation until the steady state of the electrical simulation is changed. 
 
     
     
       2. The electrothermal co-simulation method for the power electronic system of  claim 1 , wherein the step of carrying out electrical simulation of the power semiconductor device and its power circuit specifically includes:
 generating a drive signal of the power semiconductor device; 
 performing the corresponding circuit functions by the power semiconductor device and its power circuit under the action of the drive signal. 
 
     
     
       3. The electrothermal co-simulation method for the power electronic system of  claim 1 , wherein the step of carrying out junction temperature simulation of the power semiconductor device includes:
 calculating the real-time loss in the electrical simulation process of the power semiconductor device according to the real-time electrical parameters; 
 converting the real-time loss of the power semiconductor device into real-time temperature change, thereby realizing junction temperature simulation. 
 
     
     
       4. An electrothermal co-simulation system for a power electronic system, comprising:
 a computing system having a memory and a processor, the computing system having a set of models stored on the memory and processed by the processor, the models comprising: 
 an electrical simulation model for carrying out electrical simulation on the of a power semiconductor device and its power circuit, and acquiring real-time electrical parameters in the electrical simulation process; 
 a data processing model for suspending the electrical simulation in a steady state until the steady state of the electrical simulation is changed; 
 a junction temperature simulation model for carrying out simulation of the power semiconductor device, and calculating a junction temperature according to the real-time electrical parameters and in combination with a real-time loss of the power semiconductor device in the electrical simulation process; 
 the electrical simulation model, the data processing model and the junction temperature simulation model are all integrated on the same system-level simulation platform; and 
 the electrical simulation model and the junction temperature simulation model are bidirectionally connected with the data processing model, which facilitates the data processing model to control the whole electrothermal co-simulation process and ensures that the three models perform electrothermal co-simulation at the same time; 
 wherein the step of suspending the electrical simulation model in the steady state until the steady state of the electrical simulation model is changed to reduce workload of the system-level simulation platform includes: 
 determining whether the electrical simulation model is in steady state according to the real-time electrical parameters; 
 if no, continuing the electrical simulation model; and 
 if yes, suspending the electrical simulation model and maintaining the electrical parameters in the steady state, and then continuing the junction temperature simulation model until the steady state of the electrical simulation model is changed. 
 
     
     
       5. The electrothermal co-simulation system for the power electronic system of  claim 4 , wherein the electrical simulation model comprises a control circuit sub-model and a power circuit sub-model;
 the control circuit sub-model is used to generate a drive signal of the power semiconductor device, acquire the real-time electrical parameters in the electrical simulation process, and transmit the real-time electrical parameters to the junction temperature simulation model and the data processing model; 
 the power circuit sub-model is used to perform corresponding circuit functions under the action of the drive signal. 
 
     
     
       6. The electrothermal co-simulation system for the power electronic system of  claim 4 , wherein the junction temperature simulation model comprises a loss calculation sub-model and a heat conduction sub-model;
 the loss calculation sub-model is used to calculate the real-time loss in the electrical simulation process of the power semiconductor device according to the real-time electrical parameters, and transmit the real-time loss to the heat conduction sub-model and the data processing model; 
 the heat conduction sub-model is used to convert the real-time loss of the power semiconductor device into real-time temperature change, and calculate the junction temperature according to the real-time electrical parameters and in combination with the real-time loss of the power semiconductor device in the electrical simulation process. 
 
     
     
       7. A terminal including a memory and a processor, wherein computer instructions that can be operated in the processor are stored on the memory, and the steps of the electrothermal co-simulation method for the power electronic system according to  claim 1  are performed when the computer instructions are executed by the processor.

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