Semiconductor device, method of manufacturing semiconductor device, and module

Abstract

There is provided a semiconductor device including: a lead frame including a first opening portion; a resin filled in the first opening portion; and a semiconductor element electrically connected to the lead frame, wherein a side wall surface of the lead frame in the first opening portion has a larger average surface roughness than an upper surface of the lead frame.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a lead frame including:
 a first opening portion, and 
 a second opening portion,
 wherein a depth of the second opening portion is smaller than a depth of the first opening portion, and 
 wherein the second opening portion is closer to an outer end portion of the lead frame than the first opening portion; 
 
 
 a resin filled in the first opening portion; 
 a semiconductor element electrically connected to the lead frame; and 
 a pillar-shaped electrode configured to connect the lead frame to the semiconductor element,
 wherein a side wall surface of the lead frame in the first opening portion has a larger average surface roughness than an upper surface of the lead frame, 
 wherein one end of the pillar-shaped electrode faces the lead frame and the other end of the pillar-shaped electrode faces the semiconductor element, 
 wherein in a cross-sectional view, both side end portions of the one end of the pillar-shaped electrode are convex arc-shaped portions, respectively, and 
 wherein a bottom surface of the one end of the pillar-shaped electrode is formed between both of the convex arc-shaped portions. 
 
 
     
     
       2. The semiconductor device of  claim 1 ,
 wherein the first opening portion includes a first region having a first opening width, and a second region having a second opening width smaller than the first opening width, and 
 wherein the second region is located above the first region. 
 
     
     
       3. The semiconductor device of  claim 2 , wherein the depth of the second opening portion is the same as a depth of the second region. 
     
     
       4. The semiconductor device of  claim 1 , wherein the second opening portion has a rounded shape. 
     
     
       5. The semiconductor device of  claim 1 , wherein the second opening portion is formed along an outer end portion of the semiconductor device is in a plan view. 
     
     
       6. The semiconductor device of  claim 1 , wherein the lead frame is electrically connected to the semiconductor element via the pillar-shaped electrode and a metal layer. 
     
     
       7. The semiconductor device of  claim 6 , wherein the pillar-shaped electrode includes at least one material selected from the group of copper, nickel, tin, and silver. 
     
     
       8. A module comprising the semiconductor device of  claim 1 . 
     
     
       9. The semiconductor device of  claim 1 , wherein an acute angle formed by a tangent line to a point of one of the convex arc-shaped portions and the bottom surface decreases as the point moves away from the bottom surface. 
     
     
       10. A method of manufacturing a semiconductor device, comprising:
 performing roughening treatment on a lead frame including a first opening portion and a second opening portion,
 wherein a depth of the second opening portion is smaller than a depth of the first opening portion, and 
 wherein the second opening portion is closer to an outer end portion of the lead frame than the first opening portion; 
 
 forming a pillar, which includes a pillar-shaped electrode, on a semiconductor substrate,
 wherein one end of the pillar-shaped electrode faces the lead frame and the other end of the pillar-shaped electrode faces the semiconductor substrate, 
 wherein in a cross-sectional view, both side end portions of the one end of the pillar-shaped electrode are formed of convex arc-shaped portions, respectively, and 
 wherein a bottom surface of the one end of the pillar-shaped electrode is formed between both of the convex arc-shaped portions; 
 
 bonding the pillar-shaped electrode to the lead frame; and 
 filling the first opening portion with a resin. 
 
     
     
       11. The method of  claim 10 , wherein the roughening treatment is performed on a side wall surface of the first opening portion. 
     
     
       12. The method of  claim 10 , wherein the roughening treatment is performed by a method of applying a roughening solution or a method of immersing in a roughening solution. 
     
     
       13. The method of  claim 10 ,
 wherein the first opening portion includes a first region having a first opening width, and a second region having a second opening width smaller than the first opening width, and 
 wherein the second region is located above the first region. 
 
     
     
       14. The method of  claim 13 , wherein the depth of the second opening portion is the same as a depth of the second region. 
     
     
       15. The method of  claim 10 , wherein the second opening portion has a rounded shape. 
     
     
       16. The method of  claim 10 , wherein the second opening portion is formed along an outer end portion of the semiconductor device in a plan view. 
     
     
       17. The method of  claim 10 , wherein the lead frame is electrically connected to a semiconductor element via the pillar-shaped electrode and a metal layer. 
     
     
       18. The method of  claim 17 , wherein the pillar-shaped electrode includes at least one selected from the group of copper, nickel, tin, and silver.