Image sensor

Abstract

An image sensor includes a color sensor chip configured to generate a color image by sensing visible light in incident light; a light transfer layer disposed under the color sensor chip, and including an infrared light pass filter which filters infrared light from light having passed through the color sensor chip; and a depth sensor chip disposed under the light transfer layer, and configured to generate a depth image by sensing the infrared light.

What is claimed is: 
     
       1. An image sensor comprising:
 a color sensor chip configured to detect visible light in light incident to the color sensor chip and generate a color image; 
 a light transfer layer disposed under the color sensor chip and configured to receive light having passed through the color sensor chip, the light transfer layer including an infrared light pass filter allowing infrared light of the received light to pass through the infrared light pass filter; and 
 a depth sensor chip disposed under the light transfer layer, and configured to receive the infrared light from the light transfer layer and generate a depth image based on the infrared light. 
 
     
     
       2. The image sensor according to  claim 1 , wherein the light transfer layer further includes an infrared light microlens configured to collect the infrared light. 
     
     
       3. The image sensor according to  claim 2 , wherein the light transfer layer further includes an antireflection layer which is disposed between the infrared light pass filter and the infrared light microlens. 
     
     
       4. The image sensor according to  claim 3 , wherein a refractive index of the antireflection layer is smaller than a refractive index of the infrared light pass filter and is larger than a refractive index of the infrared light microlens. 
     
     
       5. The image sensor according to  claim 3 , wherein the antireflection layer includes a plurality of layers whose refractive indexes decrease toward the infrared light microlenses from the infrared light pass filter. 
     
     
       6. The image sensor according to  claim 2 , wherein the infrared light microlens is disposed to correspond to a photoelectric conversion element of the color sensor chip. 
     
     
       7. The image sensor according to  claim 6 , wherein the infrared light microlens is disposed to correspond to a portion of a photoelectric conversion element of the depth sensor chip. 
     
     
       8. The image sensor according to  claim 6 , wherein the infrared light microlens is disposed to correspond to a photoelectric conversion element of the depth sensor chip. 
     
     
       9. The image sensor according to  claim 2 , wherein the infrared light microlens is disposed to correspond to a plurality of photoelectric conversion elements of the color sensor chip. 
     
     
       10. The image sensor according to  claim 9 , wherein the infrared light microlens is disposed to correspond to a photoelectric conversion element of the depth sensor chip. 
     
     
       11. An image sensor comprising:
 a color sensor chip and a depth sensor chip that are stacked to vertically overlap with each other, each of the color sensor chip and the depth sensor chip includes a photoelectric conversion element configured to generate photocharges in response to incident light received by the color sensor chip or the depth sensor chip; and 
 an infrared light pass filter disposed between the photoelectric conversion element of the color sensor chip and the photoelectric conversion element of the depth sensor chip, and configured to allow infrared light included in light having passed through the color sensor chip to pass through the infrared light pass filter. 
 
     
     
       12. The image sensor according to  claim 11 , further comprising:
 an infrared light microlens configured to collect the infrared light. 
 
     
     
       13. The image sensor according to  claim 12 , further comprising:
 an antireflection layer disposed between the infrared light pass filter and the infrared light microlens. 
 
     
     
       14. The image sensor according to  claim 13 , wherein a refractive index of the antireflection layer is smaller than a refractive index of the infrared light pass filter and is larger than a refractive index of the infrared light microlens. 
     
     
       15. The image sensor according to  claim 13 , wherein the antireflection layer includes a plurality of layers whose refractive indexes decrease toward the infrared light microlenses from the infrared light pass filter. 
     
     
       16. The image sensor according to  claim 11 , further comprising a first wiring layer disposed between the color sensor chip and the infrared light pass filter. 
     
     
       17. The image sensor according to  claim 11 , further comprising a second wiring layer disposed between the infrared light pass filter and the depth sensor chip. 
     
     
       18. The image sensor according to  claim 11 , wherein the photelectric conversion element of at least one of the color sensor chip and the depth sensor chip includes a photodiode, a phototransistor, a photogate, a pinned photodiode or a combination thereof. 
     
     
       19. The image sensor according to  claim 11 , wherein the photelectric conversion element of the depth sensor chip has a larger volume than that of the photelectric conversion element of the color sensor chip. 
     
     
       20. The image sensor according to  claim 11 , wherein the infrared light pass filter configured to allow the infrared light having wavelength in a range between 840 to 950 nm.