Display panel, manufacturing method of display panel, and display device

Abstract

A display panel, a manufacturing method thereof, and a display device are disclosed. The display panel includes: a base substrate, provided with a terminal and a terminal protection layer pattern; the terminal protection layer pattern includes a first shielding region and a first opening region, an orthographic projection of the first shielding region on the base substrate and an orthographic projection of the terminal on the base substrate have an overlapping region, the overlapping region is located at an edge of the orthographic projection of the terminal on the base substrate, and an orthographic projection of the first opening region on the base substrate is located in the orthographic projection of the terminal on the base substrate.

What is claimed is: 
     
       1. A display panel, comprising:
 a base substrate, provided with a terminal and a terminal protection layer pattern, 
 wherein the terminal protection layer pattern comprises a first shielding region and a first opening region, an orthographic projection of the first shielding region on the base substrate and an orthographic projection of the terminal on the base substrate have an overlapping region, the overlapping region is located at an edge of the orthographic projection of the terminal on the base substrate, and an orthographic projection of the first opening region on the base substrate is located in the orthographic projection of the terminal on the base substrate, 
 wherein the base substrate is further provided with a display structure and a barrier layer pattern, 
 the barrier layer pattern is configured to protect the display structure, and the terminal protection layer pattern is disposed in a same layer with the barrier layer pattern, 
 wherein a second opening region is provided between the terminal protection layer pattern and the barrier layer pattern, and 
 wherein the orthographic projection of the first opening region on the base substrate has no overlap with an orthographic projection of the second opening region on the base substrate. 
 
     
     
       2. The display panel according to  claim 1 , wherein the base substrate is further provided with a planarization layer protection pattern,
 the planarization layer protection pattern comprises a second shielding region and a third opening region, an orthographic projection of the second shielding region on the base substrate and the orthographic projection of the terminal on the base substrate have an overlapping region, and an orthographic projection of the third opening region on the base substrate is located in the orthographic projection of the terminal on the base substrate. 
 
     
     
       3. The display panel according to  claim 2 , wherein a buffer layer, a first gate insulating layer, a gate electrode, a second gate insulating layer, and an inter-layer dielectric layer are sequentially provided on the base substrate, and a through hole is provided in the inter-layer dielectric layer and the second gate insulating layer; and
 the terminal is in contact with the gate electrode through the through hole. 
 
     
     
       4. The display panel according to  claim 1 , wherein a material of the terminal protection layer pattern comprises one selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride. 
     
     
       5. The display panel according to  claim 1 , wherein a material of the terminal protection layer pattern comprises an organic material. 
     
     
       6. The display panel according to  claim 1 , wherein the terminal is a multi-layer structure. 
     
     
       7. The display panel according to  claim 6 , wherein the terminal comprises a titanium structure, an aluminum structure, and a second titanium structure which are sequentially arranged in a direction away from the base substrate. 
     
     
       8. The display panel according to  claim 1 , wherein a buffer layer, a first gate insulating layer, a gate electrode, a second gate insulating layer, and an inter-layer dielectric layer are sequentially provided on the base substrate, and a through hole is provided in the inter-layer dielectric layer and the second gate insulating layer; and
 the terminal is in contact with the gate electrode through the through hole. 
 
     
     
       9. A display device, comprising the display panel according to  claim 1 . 
     
     
       10. A manufacturing method of a display panel, comprising:
 forming a terminal on a base substrate; and 
 forming a terminal protection layer pattern on the base substrate on which the terminal is formed, 
 wherein the forming the terminal protection layer pattern comprises: forming a first shielding region and a first opening region such that an orthographic projection of the first shielding region on the base substrate and an orthographic projection of the terminal on the base substrate have an overlapping region, the overlapping region is located at an edge of the orthographic projection of the terminal on the base substrate, and an orthographic projection of the first opening region on the base substrate is located in the orthographic projection of the terminal on the base substrate, 
 wherein before the forming the terminal protection layer pattern on the base substrate on which the terminal is formed, the manufacturing method further comprises: forming a display structure on the base substrate, 
 the forming the terminal protection layer pattern on the base substrate on which the terminal is formed further comprises: forming a barrier layer on the base substrate on which the display structure and the terminal are formed; and processing the barrier layer into a barrier layer pattern and the terminal protection layer pattern, and wherein the barrier layer pattern is configured to protect the display structure, wherein 
 the terminal protection layer pattern is disposed in a same layer with the barrier layer pattern, and a second opening region is provided between the terminal protection layer pattern and the barrier layer pattern, and 
 the orthographic projection of the first opening region on the base substrate has no overlap with an orthographic projection of the second opening region on the base substrate. 
 
     
     
       11. The manufacturing method according to  claim 10 , wherein the processing the barrier layer into the barrier layer pattern and the terminal protection layer pattern comprises:
 forming a photoresist layer on the base substrate on which the barrier layer is formed; 
 exposing and developing the photoresist layer to process the photoresist layer into a photoresist pattern; 
 processing the barrier layer into the barrier layer pattern and the terminal protection layer pattern through an etching process; and 
 removing the photoresist pattern. 
 
     
     
       12. The manufacturing method according to  claim 10 , wherein
 before the forming the terminal protection layer pattern on the base substrate on which the terminal is formed, the manufacturing method further comprises: forming a planarization layer protection pattern on the base substrate on which the terminal is formed, wherein the planarization layer protection pattern comprises a second shielding region and a third opening region, an orthographic projection of the second shielding region on the base substrate and the orthographic projection of the terminal on the base substrate have an overlapping region, and an orthographic projection of the third opening region on the base substrate is located within the orthographic projection of the terminal on the base substrate; and 
 the forming the terminal protection layer pattern on the base substrate on which the terminal is formed comprises: forming the terminal protection layer pattern on the base substrate on which the planarization layer protection pattern is formed. 
 
     
     
       13. The manufacturing method according to  claim 10 , wherein
 before the forming the terminal on the base substrate, the manufacturing method further comprises: sequentially forming a buffer layer, a first gate insulating layer, a gate electrode, a second gate insulating layer, and an inter-layer dielectric layer on the base substrate, wherein a through hole is formed in the inter-layer dielectric layer and the second gate insulating layer; and 
 the forming the terminal on the base substrate comprises: forming the terminal on the base substrate on which the inter-layer dielectric layer is formed, wherein the terminal is in contact with the gate electrode through the through hole. 
 
     
     
       14. The manufacturing method according to  claim 12 , wherein
 before the forming the terminal on the base substrate, the manufacturing method further comprises: sequentially forming a buffer layer, a first gate insulating layer, a gate electrode, a second gate insulating layer, and an inter-layer dielectric layer on the base substrate, wherein a through hole is formed in the inter-layer dielectric layer and the second gate insulating layer; and 
 the forming the terminal on the base substrate comprises: forming the terminal on the base substrate on which the inter-layer dielectric layer is formed, wherein the terminal is in contact with the gate electrode through the through hole.