US11508874B2ActiveUtilityA1

Light emitting apparatus and projector

Assignee: SEIKO EPSON CORPPriority: Nov 28, 2019Filed: Nov 27, 2020Granted: Nov 22, 2022
Est. expiryNov 28, 2039(~13.4 yrs left)· nominal 20-yr term from priority
Inventors:Osamu Okumura
H10W 90/00H04N 9/3105H04N 9/3152G03B 21/2033G03B 21/2066H04N 9/3164H04N 9/3155H04N 9/3141H01L 33/64H01L 33/60H01L 33/18H10H 20/858H10H 20/856H10H 20/818H10H 29/142
52
PatentIndex Score
0
Cited by
13
References
7
Claims

Abstract

A light emitting apparatus including a substrate, a first and a second light emitter, a first mirror that reflects light from first light emitter, a second mirror that reflects light from second light emitter, and a support member that has a first and second hole and supports the first and second mirror. The first and second light emitter each include a first semiconductor layer, a second semiconductor layer having conductivity type different from the conductivity type of first semiconductor layer, and a light emitting layer provided between the first and second semiconductor layer. The first semiconductor layer forms a plurality of columnar sections. The plurality of columnar sections of the first light emitter and the second light emitter are disposed in the first and second hole respectively. The first mirror and second mirror are provided at the side surface of support member that defines the first and second hole respectively.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A light emitting apparatus comprising:
 a substrate; 
 a first light emitter and a second light emitter provided at the substrate; 
 a first mirror that reflects light from the first light emitter; 
 a second mirror that reflects light from the second light emitter; and 
 a support member that has a first hole and a second hole and supports the first mirror and the second mirror, 
 wherein the first light emitter and the second light emitter each include:
 a first semiconductor layer, 
 a second semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer, 
 and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer forms a plurality of columnar sections; 
 
 the plurality of columnar sections of the first light emitter are disposed in the first hole, 
 the plurality of columnar sections of the second light emitter are disposed in the second hole, 
 the first mirror is provided at a first side surface of the support member, 
 the first side surface defines the first hole, 
 the second mirror is provided at a second side surface of the support member, and 
 the second side surface defines the second hole. 
 
     
     
       2. The light emitting apparatus according to  claim 1 ,
 wherein the plurality of columnar sections form a photonic crystal structure. 
 
     
     
       3. The light emitting apparatus according to  claim 1 ,
 wherein a minimum interval between the plurality of columnar sections is smaller than or equal to a wavelength of light emitted by the light emitting layer. 
 
     
     
       4. The light emitting apparatus according to  claim 1 ,
 wherein the first light emitter and the second light emitter each have a core shell structure. 
 
     
     
       5. The light emitting apparatus according to  claim 1 ,
 further comprising a reflection layer provided between the substrate and the first light emitter and between the substrate and the second light emitter. 
 
     
     
       6. The light emitting apparatus according to  claim 1 ,
 further comprising a metal layer that is supported by the support member and connects the first mirror and the second mirror to each other, and 
 thermal conductivity of the metal layer is higher than thermal conductivity of the support member. 
 
     
     
       7. A projector comprising the light emitting apparatus according to  claim 1 .

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