Method for measuring a magnetic field using a magnetic field sensor device having a second magnetic field sensor between parts of a first magnetic field sensor

Abstract

A method includes measuring a first property of a magnetic field using a bridge circuit with spatially separated bridge branches, and measuring a second property of the magnetic field using a magnetic field sensor located between the spatially separated bridge branches.

What is claimed is: 
     
       1. A method, comprising:
 configuring a first magnetic field sensor with spatially separate first and second bridge parts with a spacing therebetween, the first and second bridge parts forming a single first bridge circuit to measure a first magnetic property, and 
 configuring an entirety of a second magnetic field sensor comprising a second bridge circuit in the spacing between the spatially separate first and second bridge parts of the single first bridge circuit to measure a second magnetic property, different than the first magnetic property, wherein configuring the second magnetic field sensor comprises providing a plurality of magnetoresistive resistors, wherein the plurality of magnetoresistive resistors comprises a first magnetoresistive resistor and a second magnetoresistive resistor, and wherein the first magnetoresistive resistor has a different transfer function and sensitivity range than the second magnetoresistive resistor. 
 
     
     
       2. The method of  claim 1 , wherein configuring the first magnetic field sensor comprises providing the spatially separate first and second bridge parts with magnetoresistive resistors. 
     
     
       3. The method of  claim 1 , wherein the first magnetoresistive resistor and the second magnetoresistive resistor have different dimensions. 
     
     
       4. The method of  claim 1 , wherein configuring the first magnetic field sensor and configuring the second magnetic field sensor comprises at least one common processing phase for forming the first and second magnetic field sensor. 
     
     
       5. The method of  claim 4 , wherein the at least one common processing phase comprises a material deposition phase depositing material to form the first and second magnetic field sensors. 
     
     
       6. The method of  claim 5 , wherein the material comprises a magnetically active material. 
     
     
       7. The method of  claim 1 , wherein configuring the second magnetic field sensor comprises providing the first magnetoresistive resistor, the second magnetoresistive resistor, a third magnetoresistive resistor, and a fourth magnetoresistive resistor that each exhibit a giant magnetoresistance or a tunnel magnetoresistance. 
     
     
       8. The method of  claim 7 , wherein the first and the third magnetoresistive resistors have different sensitivity ranges than the second and the fourth magnetoresistive resistors. 
     
     
       9. The method of  claim 1 , wherein the first magnetic property is a modulation of a magnetic field, wherein the second magnetic property is a strength of the magnetic field, and wherein the method further comprises:
 deriving a speed of a magnet from the measured modulation of the magnetic field; and 
 deriving a proximity of the magnet from the measured strength of the magnetic field. 
 
     
     
       10. The method of  claim 1 , wherein the first magnetoresistive resistor has a first thickness and the second magnetoresistive resistor has a second thickness different from the first thickness. 
     
     
       11. The method of  claim 1 , wherein the first magnetoresistive resistor exhibits a giant magnetoresistance and the second magnetoresistive resistor exhibits a tunnel magnetoresistance different from the giant magnetoresistance. 
     
     
       12. A method, comprising:
 measuring a modulation of a magnetic field using a bridge circuit with spatially separated bridge branches, and 
 measuring a strength of the magnetic field using a magnetic field sensor located between the spatially separated bridge branches, wherein the magnetic field sensor comprises a plurality of magnetoresistive resistors, and wherein a first magnetoresistive resistor of the plurality of magnetoresistive resistors has a different sensitivity range than a second magnetoresistive resistor of the plurality of magnetoresistive resistors, 
 wherein the first magnetoresistive resistor of the plurality of magnetoresistive resistors has a different transfer function than the second magnetoresistive resistor of the plurality of magnetoresistive resistors. 
 
     
     
       13. The method of  claim 12 , wherein the magnetic field is associated with a magnet, and wherein the method further comprises deriving a speed of the magnet from the measured modulation of the magnetic field. 
     
     
       14. The method of  claim 13 , further comprising deriving a proximity of the magnet from the measured strength of the magnetic field, the magnet being arranged on a moving object adjacent to the magnetic field sensor. 
     
     
       15. The method of  claim 12 , further comprising detecting a fault of at least one of the bridge circuit and the magnetic field sensor based on at least one of measuring the modulation and measuring the strength. 
     
     
       16. The method of  claim 12 , wherein measuring the modulation and measuring the strength comprises at least one of detecting a giant magnetoresistance change or a tunnel magnetoresistance change. 
     
     
       17. The method of  claim 12 , wherein the magnetic field sensor comprises the first magnetoresistive resistor, the second magnetoresistive resistor, a third magnetoresistive resistor, and a fourth magnetoresistive resistor that each exhibit a giant magnetoresistance or a tunnel magnetoresistance. 
     
     
       18. The method of  claim 17 , wherein the first and the third magnetoresistive resistors have different transfer functions than the second and the fourth magnetoresistive resistors.