Method for producing an atom trap, and atom trap

Abstract

A method for producing an atom trap ( 20 ) comprising the steps: (a) applying an electrically conductive starting layer ( 2 ) onto a substrate ( 1 ), (b) applying at least one electric conductor element ( 4 ) to the starting layer ( 2 ) by means of electro-chemical deposition and/or a lift-off method, (c) applying at least one contacting element ( 6 ) by means of electro-chemical deposition and/or a lift-off method, such that the at least one contacting element ( 6 ) is connected to the at least one electric conductor element ( 4 ) in an electrically conductive manner, (d) removing the starting layer ( 2 ) in regions in which no electric conductor element ( 4 ) has been applied, (e) applying an insulation layer ( 7 ) that at least partially covers the at least one electric conductor element ( 4 ) and the at least one contacting element ( 6 ), (f) planarizing the insulation layer ( 7 ) and exposing the at least one contacting element ( 6 ), and (g) applying at least one additional electric conductor ( 14 ) element by means of electro-chemical deposition and/or a lift-off method, such that the at least one additional electric conductor element ( 14 ) is connected to the at least one contacting element ( 6 ) in an electrically conductive manner.

The invention claimed is: 
     
       1. A method for producing an atom trap comprising the steps:
 (a) applying an electrically conductive starting layer onto a substrate, 
 (b) applying at least one electric conductor element to the starting layer by means of electro-chemical deposition and/or a lift-off method, 
 (c) applying at least one contacting element by means of electro-chemical deposition and/or a lift-off method, such that the at least one contacting element is connected to the at least one electric conductor element in an electrically conductive manner, 
 (d) removing the starting layer in regions in which no electric conductor element has been applied, 
 (e) applying an insulation layer that at least partially covers the at least one electric conductor element and the at least one contacting element, 
 (f) planarizing the insulation layer and exposing the at least one contacting element, and 
 (g) applying at least one additional electric conductor element by means of electro-chemical deposition and/or a lift-off method, such that the at least one additional electric conductor element is connected to the at least one contacting element in an electrically conductive manner. 
 
     
     
       2. A method for producing an atom trap comprising the steps:
 (a) applying an electrically conductive starting layer onto a substrate, 
 (b) applying at least one electric conductor element to the starting layer by means of electro-chemical deposition and/or a lift-off method, 
 (c) removing the starting layer in regions in which no electric conductor element has been applied, 
 (d) applying an insulation layer that at least partially, but especially fully, covers the at least one electric conductor element, 
 (e) removing the insulation layer in predetermined regions above the at least one electric conductor element, such that the at least one electric conductor element is partially exposed, 
 (f) applying contacting elements by means of electro-chemical deposition and/or a lift-off method in the regions in which the at least one electric conductor element is exposed, and 
 (g) applying at least one additional electric conductor element by means of electro-chemical deposition and/or a lift-off method, such that the at least one additional electric conductor element is connected to the at least one contacting element in an electrically conductive manner. 
 
     
     
       3. The method according to  claim 1 , wherein the electric conductor elements and/or the contacting elements are com-posed of gold or copper, or an alloy containing gold and/or copper. 
     
     
       4. The method according to  claim 1 , further comprising:
 exposing the at least one contacting element by planarizing the insulation layer in step (f). 
 
     
     
       5. The method according to  claim 1 , further comprising:
 (h) removing the starting layer in regions in which no additional electric conductor element has been applied, such that gaps form. 
 
     
     
       6. The method according to  claim 4  wherein the gaps have an aspect ratio of at least 1. 
     
     
       7. The method according to  claim 1 , further comprising:
 repeating steps (c) to (g) or (c) to (h), thereby obtaining a multilayer atom trap. 
 
     
     
       8. The method according to  claim 1 , wherein the electric conductor elements are applied with a layer thickness of at least 1 μm and/or the insulation layer and/or the at least one contacting element is applied with a layer thickness of at least 1 μm. 
     
     
       9. The method according to  claim 1 , wherein the electric conductor elements and/or the contacting elements are applied with an aspect ratio of at least 1. 
     
     
       10. The method according to  claim 1 , wherein the substrate features a recess for passing an atomic beam or such a recess is introduced into the substrate. 
     
     
       11. An atom trap, produced according to a method according to  claim 1 , wherein the atom trap comprises at least one electric conductor element applied by electro-chemical deposition and/or a lift-off method, and at least one contacting element applied by electro-chemical deposition and/or a lift-off method, and the at least one electric conductor element and the at least one contacting element has a layer thickness of at least 1 μm and an aspect ratio of at least 1.