Memristor electrode material preparation method and apparatus, and memristor electrode material

Abstract

Embodiments of the present application provide a memristor electrode material preparation method and apparatus, and a memristor electrode material. The preparation method includes: depositing a metal nitride on a substrate by a reactive sputtering process to obtain a metal nitride substrate; and subjecting the metal nitride substrate to laser annealing treatment in a nitrogen-containing atmosphere to nitride an unreacted metal on the metal nitride substrate, so as to obtain a memristor electrode material.

What is claimed is: 
     
       1. A memristor electrode material preparation method, comprising:
 depositing a metal nitride on a substrate by a plasma enhanced atomic layer deposition process to obtain a metal nitride substrate; 
 subjecting the metal nitride substrate obtained by the plasma enhanced atomic layer deposition process to laser annealing treatment under vacuum, to obtain a memristor electrode material used for preparing electrodes of memristors of a resistive memory; 
 wherein the depositing the metal nitride on the substrate by the plasma enhanced atomic layer deposition process comprises: 
 in a first stage, introducing a metal precursor into a chamber in which the substrate is placed, the metal precursor comprising a metal in the metal nitride; 
 in a second stage, introducing a purge gas into the chamber to discharge the metal precursor that is not adsorbed on the substrate from the chamber; 
 in a third stage, introducing a reactive gas into the chamber, and initiating a chemical reaction between the reactive gas and the metal precursor adsorbed on the substrate in a plasma enhanced manner to obtain the metal nitride, wherein the reactive gas is a nitrogen-containing gas; and 
 in a fourth stage, discharging a by-product of the reaction and the remaining reactive gas from the chamber by a purge gas. 
 
     
     
       2. The preparation method according to  claim 1 , wherein an energy parameter of laser used in the laser annealing enables energy generated by the laser to be greater than or equal to energy required for a metal nitridation reaction, and to be less than energy required to cause material damage to the metal nitride. 
     
     
       3. The preparation method according to  claim 1 , wherein the method further comprises:
 cleaning and drying the metal nitride substrate subjected to the laser annealing treatment. 
 
     
     
       4. The preparation method according to  claim 1 , wherein the substrate is a silicon wafer. 
     
     
       5. The preparation method according to  claim 4 , wherein the silicon wafer comprises a specific circuit structure for controlling switching of a resistance state of the memristor of the resistive memory. 
     
     
       6. The preparation method according to  claim 1 , wherein the nitrogen-containing atmosphere comprises at least one of nitrogen, ammonia, and a mixed gas of nitrogen and hydrogen. 
     
     
       7. The preparation method according to  claim 1 , wherein the nitrogen-containing gas comprises at least one of the following gases: nitrogen, ammonia, and a mixed gas of nitrogen and hydrogen. 
     
     
       8. A memristor electrode material preparation apparatus, comprising:
 a first device, configured to execute a plasma enhanced atomic layer deposition process to deposit a metal nitride on a substrate to obtain a metal nitride substrate; 
 a second device, configured to subject the metal nitride substrate to laser annealing treatment to obtain a memristor electrode material for preparing electrodes of memristors of a resistive memory, wherein the second device is configured in a vacuum environment; and 
 a vacuum chamber, configured to connect the first device and the second device under vacuum; 
 wherein the first device comprises a first chamber provided with a working table, a valve and a plasma generating apparatus, wherein the working table is configured to place a substrate to be processed, the valve is configured to controlling inflow and outflow as well as volume of flow of a gas during execution of the plasma enhanced atomic layer deposition process, and the plasma generating apparatus is configured to generate plasma; and 
 the second device comprises a second chamber provided with a laser, and a laser beam generated by the laser is used for annealing the metal nitride substrate. 
 
     
     
       9. The preparation apparatus according to  claim 8 , wherein a first gate is disposed between the first device and the vacuum chamber, and a second gate is disposed between the second device and the vacuum chamber,
 wherein, after the metal nitride substrate is obtained, the first gate is opened to move the metal nitride substrate to the vacuum chamber, then the first gate is closed and the second gate is opened to move the metal nitride substrate to the second chamber. 
 
     
     
       10. The preparation apparatus according to  claim 8 , wherein a performance index of the metal nitride satisfies the following conditions:
 resistivity is lower than a first threshold, residual of a carbon element is lower than a second threshold, an oxygen content is lower than a third threshold, and an absolute value of a difference between a ratio between a number of atoms of metal and a number of atoms of nitrogen, and 1 is less than a fourth threshold. 
 
     
     
       11. The preparation apparatus according to  claim 10 , wherein the first threshold is 100 micro-ohm centimeters, the second threshold is 1 atom percent, the third threshold is 10 atom percent, and the four threshold is 0.1. 
     
     
       12. A memristor electrode material of a memristor of a resistive memory, wherein the memristor electrode material is at least prepared by:
 depositing a metal nitride on a substrate by a plasma enhanced atomic layer deposition process to obtain a metal nitride substrate; and 
 subjecting the metal nitride substrate obtained by the plasma enhanced atomic layer deposition process to laser annealing treatment under vacuum; 
 wherein the depositing the metal nitride on the substrate by the plasma enhanced atomic layer deposition process comprises: 
 in a first stage, introducing a metal precursor into a chamber in which the substrate is placed, the metal precursor comprising a metal in the metal nitride; 
 in a second stage, introducing a purge gas into the chamber to discharge the metal precursor that is not adsorbed on the substrate from the chamber; 
 in a third stage, introducing a reactive gas into the chamber, and initiating a chemical reaction between the reactive gas and the metal precursor adsorbed on the substrate in a plasma enhanced manner to obtain the metal nitride, wherein the reactive gas is a nitrogen-containing gas; and 
 in a fourth stage, discharging a by-product of the reaction and the remaining reactive gas from the chamber by a purge gas. 
 
     
     
       13. The memristor electrode material according to  claim 12 , wherein a performance index of a metal nitride in the memristor electrode material satisfies the following conditions:
 resistivity is lower than a first threshold, residual of a carbon element is lower than a second threshold, an oxygen content is lower than a third threshold, and an absolute value of a difference between a ratio between a number of atoms of metal and a number of atoms of nitrogen, and 1 is less than a fourth threshold. 
 
     
     
       14. The memristor electrode material according to  claim 13 , wherein the first threshold is 100 micro-ohm centimeters, the second threshold is 1 atom percent, the third threshold is 10 atom percent, and the four threshold is 0.1. 
     
     
       15. The memristor electrode material according to  claim 12 , wherein an energy parameter of laser used in the laser annealing enables energy generated by the laser to be greater than or equal to energy required for a metal nitridation reaction, and to be less than energy required to cause material damage to the metal nitride. 
     
     
       16. The memristor electrode material according to  claim 12 , wherein the memristor electrode material is also prepared by:
 cleaning and drying the metal nitride substrate subjected to the laser annealing treatment. 
 
     
     
       17. The memristor electrode material according to  claim 12 , wherein the nitrogen-containing atmosphere comprises at least one of nitrogen, ammonia, and a mixed gas of nitrogen and hydrogen. 
     
     
       18. The preparation method according to  claim 1 , wherein the method further comprises:
 determining a type of laser used for the laser annealing according to a transmittance of the metal nitride. 
 
     
     
       19. The preparation apparatus according to  claim 8 , wherein a type of laser used for the laser annealing is determined by a transmittance of the metal nitride. 
     
     
       20. The memristor electrode material according to  claim 12 , wherein a type of laser used for the laser annealing is determined by a transmittance of the metal nitride.