Si2Te3 resistive memory

Abstract

A ReRAM device manufactured using 2-D Si2Te3 (silicon telluride) nanowires or nanoplates. The Si2Te3 nanowires exhibit a unique reversible resistance switching behavior driven by an applied electrical potential, which leads to switching of the NWs from a high-resistance state (HRS) to a low-resistance state (LRS). This switched LRS is highly stable unless the opposite potential is applied to switch the resistance back. This provides a new class of resistive switching based on semiconductor rather than dielectric materials. In several embodiments, the polarity of the initially applied potential along the Si2Te3 nanowires defines the switch “on” and “off” directions, which become permanent once set.

What is claimed is: 
     
       1. A memory device, comprising:
 a silicon telluride (Si2Te3) nanowire disposed between a first electrode and a second electrode, wherein the silicon telluride (Si2Te3) nanowire switches between a high resistance state and a low resistance state under an applied potential; 
 wherein the silicon telluride (Si2Te3) nanowire comprises a nanowire manufactured by chemical vapor deposition on a substrate with one or more catalysts on the substrate, said one or more catalysts comprising Au nanoclusters. 
 
     
     
       2. The memory device of  claim 1 , wherein the applied potential causes structural change in the silicon telluride (Si2Te3) nanowires. 
     
     
       3. The memory device of  claim 1 , wherein the low resistance state is highly stable. 
     
     
       4. The memory device of  claim 1 , wherein the device is switched from a high resistance state to a low resistance state by application of the applied potential with a first polarity. 
     
     
       5. The memory device of  claim 4 , wherein the device is switched from a low resistance state to a high resistance state by changing the first polarity of the applied potential to a second polarity opposite the first polarity. 
     
     
       6. The memory device of  claim 1 , wherein the device is switched from a low resistance state to a high resistance state, or vice-version, by the applied potential without changing polarity. 
     
     
       7. The memory device of  claim 1 , wherein the memory device is a flash memory device. 
     
     
       8. The memory device of  claim 1 , wherein the memory device is a memristor. 
     
     
       9. The memory device of  claim 1 , wherein the applied potential when first applied has a polarity that permanently defines the switch directions for low resistance state and high resistance state for a particular silicon telluride (Si2Te3) nanowire.