US11189656B2ActiveUtilityA1

Imaging device and electronic device

Assignee: SEMICONDUCTOR ENERGY LABPriority: Feb 19, 2016Filed: Jul 8, 2019Granted: Nov 30, 2021
Est. expiryFeb 19, 2036(~9.6 yrs left)· nominal 20-yr term from priority
H04N 23/54H04N 25/76H04N 25/77H04N 25/78H10D 86/423H10D 86/60H10D 30/6755H10F 39/80377H10F 39/80373H10F 39/8033H10F 39/809H01L 27/14616H01L 27/14634H04N 5/2253H04N 5/378H01L 27/1225H04N 5/3745H01L 27/307H01L 27/1461H04N 5/374H01L 29/7869H01L 27/14614H10K 39/32
75
PatentIndex Score
1
Cited by
52
References
2
Claims

Abstract

An object is to provide an imaging device in which a circuit for reading a signal is provided in a pixel region. The imaging device includes a first pixel and a second pixel. The first pixel is capable of outputting a first signal output from a pixel circuit included in the first pixel or a second signal input from the first pixel in the previous stage, to the first pixel or the second pixel in the next stage. The second pixel is capable of outputting, to the outside, the first signal or the second signal, which is input from the first pixel in the previous stage, or a third signal output from a pixel circuit included in the second pixel.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. An imaging device comprising:
 a pixel comprising a pixel circuit and a circuit; and 
 wherein:
 the pixel circuit comprises a photoelectric conversion element, a first transistor, and a second transistor, 
 the circuit comprises a first capacitor, a second capacitor, a third transistor, and a fourth transistor, 
 the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor, 
 the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor, 
 one of a source and a drain of the second transistor is electrically connected to a first wiring, 
 the other of the source and the drain of the second transistor is electrically connected to a terminal of the first capacitor and a gate of the third transistor, 
 one of a source and a drain of the third transistor is electrically connected to a second wiring, 
 the other of the source and the drain of the third transistor is electrically connected to a terminal of the second capacitor and a gate of the fourth transistor, and 
 one of a source and a drain of the fourth transistor is electrically connected to the second wiring. 
 
 
     
     
       2. An imaging device comprising:
 a pixel comprising a pixel circuit and a circuit; and 
 wherein:
 the pixel circuit comprises a photoelectric conversion element, a first transistor, and a second transistor, 
 the circuit comprises a first capacitor, a second capacitor, a third transistor, and a fourth transistor, 
 at least one of the first to fourth transistors comprises a channel formation region which comprises an oxide semiconductor, 
 the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor, 
 the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor, 
 one of a source and a drain of the second transistor is electrically connected to a first wiring, 
 the other of the source and the drain of the second transistor is electrically connected to a terminal of the first capacitor and a gate of the third transistor, 
 one of a source and a drain of the third transistor is electrically connected to a second wiring, 
 the other of the source and the drain of the third transistor is electrically connected to a terminal of the second capacitor and a gate of the fourth transistor, 
 one of a source and a drain of the fourth transistor is electrically connected to the second wiring, and 
 the other of the source and the drain of the fourth transistor is electrically connected to an output terminal.

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