Semiconductor device

Abstract

To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a first insulator; 
 a thin film transistor over the first insulator; 
 a first conductive layer over the thin film transistor; 
 a second conductive layer over the first conductive layer, the second conductive layer including an antenna portion and a wiring portion; and 
 a second insulator over the second conductive layer, 
 wherein the wiring portion of the second conductive layer is electrically connected to the thin film transistor. 
 
     
     
       2. The semiconductor device according to  claim 1 , further comprising a third conductive layer provided between the first insulator and the thin film transistor. 
     
     
       3. The semiconductor device according to  claim 1 , wherein the thin film transistor is included in a layer having a circuit provided over the first insulator. 
     
     
       4. The semiconductor device according to  claim 1 ,
 wherein the first insulator comprises a first organic resin and a first fibrous body, and 
 wherein the second insulator comprises a second organic resin and a second fibrous body. 
 
     
     
       5. The semiconductor device according to  claim 4 ,
 wherein the first organic resin includes a plurality of first conductive particles, and 
 wherein the second organic resin includes a plurality of second conductive particles. 
 
     
     
       6. The semiconductor device according to  claim 4 ,
 wherein each of the first fibrous body and the second fibrous body comprises one of a polyvinyl alcohol fiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramid fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber. 
 
     
     
       7. The semiconductor device according to  claim 1 ,
 wherein the first conductive layer comprises at least one of titanium, molybdenum, tungsten, aluminum, titanium nitride, tantalum nitride, tungsten nitride, indium oxide, and indium tin oxide. 
 
     
     
       8. The semiconductor device according to  claim 1 ,
 wherein the second conductive layer comprises at least one of titanium, molybdenum, tungsten, aluminum, copper, silver, gold, nickel, platinum, palladium, iridium, rhodium, tantalum, cadmium, zinc, and iron. 
 
     
     
       9. A semiconductor device comprising:
 a first insulator; 
 a thin film transistor over the first insulator; 
 a first conductive layer over the thin film transistor; 
 a second conductive layer over the first conductive layer, the second conductive layer including an antenna portion and a wiring portion; and 
 a second insulator over the second conductive layer, 
 wherein the antenna portion has at least one of a linear shape, a curved shape, a meandering shape, a coiled shape, and a ribbon shape, and 
 wherein the wiring portion of the second conductive layer is electrically connected to the thin film transistor. 
 
     
     
       10. The semiconductor device according to  claim 9 , further comprising a third conductive layer provided between the first insulator and the thin film transistor. 
     
     
       11. The semiconductor device according to  claim 9 , wherein the thin film transistor is included in a layer having a circuit provided over the first insulator. 
     
     
       12. The semiconductor device according to  claim 9 ,
 wherein the first insulator comprises a first organic resin and a first fibrous body, and 
 wherein the second insulator comprises a second organic resin and a second fibrous body. 
 
     
     
       13. The semiconductor device according to  claim 12 ,
 wherein the first organic resin includes a plurality of first conductive particles, and 
 wherein the second organic resin includes a plurality of second conductive particles. 
 
     
     
       14. The semiconductor device according to  claim 12 ,
 wherein each of the first fibrous body and the second fibrous body comprises one of a polyvinyl alcohol fiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramid fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber. 
 
     
     
       15. The semiconductor device according to  claim 9 ,
 wherein the first conductive layer comprises at least one of titanium, molybdenum, tungsten, aluminum, titanium nitride, tantalum nitride, tungsten nitride, indium oxide, and indium tin oxide. 
 
     
     
       16. The semiconductor device according to  claim 9 ,
 wherein the second conductive layer comprises at least one of titanium, molybdenum, tungsten, aluminum, copper, silver, gold, nickel, platinum, palladium, iridium, rhodium, tantalum, cadmium, zinc, and iron.