Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device

Abstract

An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (A) having a glass transition temperature of 155° C. or higher, a compound (B) having a glass transition temperature of 150° C. or lower, and a solvent (C). A solid content in the actinic ray-sensitive or radiation-sensitive resin composition is 20% by mass or more. A softening point of the resist pattern formed using the actinic ray-sensitive or radiation-sensitive resin composition is from 130° C. to 170° C.

What is claimed is: 
     
       1. An actinic ray-sensitive or radiation-sensitive resin composition comprising:
 a resin (A) having a glass transition temperature of 155° C. or higher; 
 a compound (B) having a glass transition temperature of 150° C. or lower; and 
 a solvent (C), 
 wherein a solid content in the actinic ray-sensitive or radiation-sensitive resin composition is 20% by mass or more, and 
 a softening point of a resist pattern formed using the actinic ray-sensitive or radiation-sensitive resin composition is from 130° C. to 170° C. 
 
     
     
       2. The actinic ray-sensitive or radiation-sensitive resin composition according to  claim 1 ,
 wherein the compound (B) is a resin. 
 
     
     
       3. The actinic ray-sensitive or radiation-sensitive resin composition according to  claim 2 ,
 wherein a weight-average molecular weight of the resin as the compound (B) is 1,000 to 18,000. 
 
     
     
       4. The actinic ray-sensitive or radiation-sensitive resin composition according to  claim 2 ,
 wherein the resin (B) has a repeating unit derived from hydroxystyrene. 
 
     
     
       5. The actinic ray-sensitive or radiation-sensitive resin composition according to  claim 1 ,
 wherein the compound (B) is a polyether-based compound. 
 
     
     
       6. The actinic ray-sensitive or radiation-sensitive resin composition according to  claim 5 ,
 wherein a molecular weight of the polyether-based compound is 100 to 5,000. 
 
     
     
       7. The actinic ray-sensitive or radiation-sensitive resin composition according to  claim 1 ,
 wherein a viscosity of the actinic ray-sensitive or radiation-sensitive resin composition is 100 to 500 mPa·s. 
 
     
     
       8. The actinic ray-sensitive or radiation-sensitive resin composition according to  claim 1 ,
 wherein a glass transition temperature of the resin (A) is 170° C. or higher. 
 
     
     
       9. The actinic ray-sensitive or radiation-sensitive resin composition according to  claim 1 ,
 wherein a weight-average molecular weight of the resin (A) is 18,000 or more. 
 
     
     
       10. The actinic ray-sensitive or radiation-sensitive resin composition according to  claim 1 ,
 wherein the resin (A) has a repeating unit derived from hydroxystyrene. 
 
     
     
       11. An actinic ray-sensitive or radiation-sensitive film formed using the actinic ray-sensitive or radiation-sensitive resin composition according to  claim 1 . 
     
     
       12. A pattern forming method comprising:
 (i) a step of forming an actinic ray-sensitive or radiation-sensitive film having a film thickness of 1 μm or more on a substrate, using the actinic ray-sensitive or radiation-sensitive resin composition according to  claim 1 ; 
 (ii) a step of irradiating the actinic ray-sensitive or radiation-sensitive film with actinic rays or radiation; and 
 (iii) a step of developing the actinic ray-sensitive or radiation-sensitive film irradiated with the actinic rays or radiation, using a developer. 
 
     
     
       13. A method for manufacturing an electronic device, comprising the pattern forming method according to  claim 12 .