US10978359B2ActiveUtilityA1
SiC substrate evaluation method, SiC epitaxial wafer manufacturing method, and SiC epitaxial wafer
Est. expirySep 10, 2038(~12.1 yrs left)· nominal 20-yr term from priority
Inventors:Shunsuke Noguchi
H10P 74/235H10P 72/0616H10P 14/3408H10P 14/2925H10P 14/2904H10P 14/24H10P 74/203H10D 62/8325H10D 62/60H10D 62/57G01N 23/2258H01L 21/67288H01L 29/34H01L 29/1608H01L 22/24H01L 29/36H01L 21/02529H01L 21/0243H01L 22/12H01L 21/0262H01L 21/02378
52
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Claims
Abstract
Provided is an SiC substrate evaluation that includes irradiating a first surface of an SiC substrate which is cut out from an SiC ingot with excitation light before an epitaxial film is laminated on the first surface to perform photoluminescence measurement.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. An SiC epitaxial wafer comprising:
an SiC substrate; and
an epitaxial film which is laminated on a first surface of the SiC substrate,
wherein a region where an intensity of photoluminescence caused by impurities becomes higher than an intensity of photoluminescence caused by an SiC band end is equal to or less than 50% of a total area of the first surface in the first surface of the SiC substrate.Join the waitlist — get patent alerts
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