Memory device and method of controlling memory device

Abstract

A memory device includes: a memory cell array having a plurality of memory cells, wherein each of the plurality of memory cells includes a first port; a first control circuit disposed on a first side of the memory cell array and arranged to electrically connect to the plurality of first ports; and a second control circuit disposed on a second side of the memory cell array and arranged to electrically connect to the plurality of first ports; wherein the second side is opposite to the first side of the memory cell array.

What is claimed is: 
     
       1. A memory device, comprising:
 a memory cell array, having a plurality of memory cells, wherein each of the plurality of memory cells comprises a first port; 
 a first control circuit, disposed on a first side of the memory cell array and arranged to electrically connect to the plurality of first ports; and 
 a second control circuit, disposed on a second side of the memory cell array and arranged to electrically connect to the plurality of first ports; 
 wherein the second side is opposite to the first side of the memory cell array. 
 
     
     
       2. The memory device of  claim 1 , wherein each of the plurality of memory cells further comprises a second port different from the first port, and the memory device further comprises:
 a third control circuit, disposed on the second side of the memory cell array and arranged to electrically connect to the plurality of second ports; and 
 a fourth control circuit, disposed on the first side of the memory cell array and arranged to electrically connect to the plurality of second ports. 
 
     
     
       3. The memory device of  claim 2 , wherein the second control circuit is disposed between the memory cell array and the third control circuit, and the fourth control circuit is disposed between the memory cell array and the first control circuit. 
     
     
       4. The memory device of  claim 2 , wherein the first port comprises a first connecting node and a second connecting node, and the memory device further comprises:
 a first bit line, extended from the first side to the second side, for electrically connecting the first control circuit, the first connecting node, and the second control circuit; and 
 a second bit line, extended from the first side to the second side, for electrically connecting the first control circuit, the second connecting node, and the second control circuit. 
 
     
     
       5. The memory device of  claim 4 , wherein the memory device further comprises:
 a first conductive line, extended from the first side to the second side, for electrically connecting the first control circuit and the second control circuit. 
 
     
     
       6. The memory device of  claim 5 , wherein the second port comprises a third connecting node and a fourth connecting node, and the memory device further comprises:
 a third bit line, extended from the second side to the first side, for electrically connecting the third control circuit, the third connecting node, and the fourth control circuit; and 
 a fourth bit line, extended from the second side to the first side, for electrically connecting the third control circuit, the fourth connecting node, and the fourth control circuit. 
 
     
     
       7. The memory device of  claim 6 , wherein the memory device further comprises:
 a second conductive line, extended from the second side to the first side, for electrically connecting the third control circuit and the fourth control circuit. 
 
     
     
       8. The memory device of  claim 7 , wherein the first control circuit comprises:
 a first precharger, coupled to a first node of the first bit line and a first node of the second bit line, for precharging the first node of the first bit line and the first node of the second bit line during a reading operation of the memory device; and 
 a first driver, coupled to the first node of the first bit line and the first node of the second bit line, for driving the first node of the first bit line and the first node of the second bit line during a writing operation of the memory device; and 
 the second control circuit comprises: 
 a second precharger, coupled to a second node of the first bit line and a second node of the second bit line, for precharging the second node of the first bit line and the second node of the second bit line during the reading operation of the memory device. 
 
     
     
       9. The memory device of  claim 8 , wherein the first control circuit further comprises:
 a first equalizer, coupled to first node of the first bit line and the first node of the second bit line, for equalizing a first voltage level on the first node of the first bit line and a second voltage level on the first node of the second bit line; and 
 the second control circuit further comprises: 
 a second equalizer, coupled to second node of the first bit line and the second node of the second bit line, for equalizing the first voltage level on the second node of the first bit line and the second voltage level on the second node of the second bit line. 
 
     
     
       10. The memory device of  claim 9 , wherein the second control circuit further comprises:
 a second driver, coupled to the second node of the first bit line and the second node of the second bit line, for driving second node of the first bit line and the second node of the second bit line during the writing operation of the memory device. 
 
     
     
       11. The memory device of  claim 7 , wherein the first control circuit comprises:
 a first driver, coupled to a first node of the first bit line and a first node of the second bit line, for driving the first node of the first bit line and the first node of the second bit line during a writing operation of the memory device; and 
 the second control circuit comprises: 
 a second driver, coupled to a second node of the first bit line and a second node of the second bit line, for driving the second node of the first bit line and the second node of the second bit line during the writing operation of the memory device. 
 
     
     
       12. A memory device, comprising:
 a memory cell array, having a plurality of memory cells, wherein each of the plurality of memory cells comprises a first port, wherein the first port comprises a first connecting node and a second connecting node; 
 a first control circuit, disposed on a first side of the memory cell array and arranged to electrically connect to the plurality of first ports; 
 a second control circuit, disposed on a second side of the memory cell array and arranged to electrically connect to the plurality of first ports, wherein the second side is opposite to the first side of the memory cell array; 
 a first bit line, extended from the first side to the second side, for electrically connecting the first control circuit, the first connecting node, and the second control circuit; and 
 a second bit line, extended from the first side to the second side, for electrically connecting the first control circuit, the second connecting node, and the second control circuit. 
 
     
     
       13. The memory device of  claim 12 , wherein the memory device further comprises:
 a first conductive line, extended from the first side to the second side, for electrically connecting the first control circuit and the second control circuit. 
 
     
     
       14. The memory device of  claim 12 , wherein the first control circuit comprises:
 a first precharger, coupled to a first node of the first bit line and a first node of the second bit line, for precharging the first node of the first bit line and the first node of the second bit line during a reading operation of the memory device. 
 
     
     
       15. The memory device of  claim 14 , wherein the first control circuit comprises:
 a first equalizer, coupled to first node of the first bit line and the first node of the second bit line, for equalizing a first voltage level on the first node of the first bit line and a second voltage level on the first node of the second bit line. 
 
     
     
       16. The memory device of  claim 14 , wherein the second control circuit comprises:
 a second precharger, coupled to a second node of the first bit line and a second node of the second bit line, for precharging the second node of the first bit line and the second node of the second bit line during the reading operation of the memory device. 
 
     
     
       17. The memory device of  claim 16 , wherein the second control circuit comprises:
 a second equalizer, coupled to second node of the first bit line and the second node of the second bit line, for equalizing the first voltage level on the second node of the first bit line and the second voltage level on the second node of the second bit line. 
 
     
     
       18. The memory device of  claim 12 , further comprising:
 a latching circuit arranged to latch a voltage on one of the first bit line and the second bit line into a supply voltage level. 
 
     
     
       19. The memory device of  claim 12 , further comprising:
 a sensing amplifier comprising a first input terminal and a second input terminal respectively connected to the first bit line and the second bit line. 
 
     
     
       20. A memory device, comprising:
 a memory cell array, having a plurality of memory cells, wherein each of the plurality of memory cells comprises a first port; 
 a first control circuit, disposed on a first side of the memory cell array and arranged to electrically connect to the plurality of first ports; and 
 a second control circuit, disposed on a second side of the memory cell array and arranged to electrically connect to the plurality of first ports, wherein the second side is opposite to the first side of the memory cell array; and 
 a sensing amplifier comprising a first input terminal and a second input terminal respectively connected to the first bit line and the second bit line.