Semiconductor device and method of manufacturing thereof

Abstract

A part of the semiconductor substrate is processed to form fins protruding from the upper surface of the semiconductor substrate. Next, an interlayer insulating film is formed on the semiconductor substrate including the fin FA, and an opening is formed in the interlayer insulating film. Next, a dummy pattern including the dummy material and the insulating film is formed in the opening in a self-aligned manner. Thereafter, the dummy pattern is replaced with a memory gate electrode, a control gate electrode, and the like.

What is claimed is: 
     
       1. A method of manufacturing a semiconductor device, comprising the steps of:
 (a) providing a semiconductor substrate; 
 (b) forming a first interlayer insulating film on the semiconductor substrate; 
 (c) forming a first opening in the first interlayer insulating film; 
 (d) forming a dummy pattern inside the first opening; 
 (e) removing a part of the dummy pattern; 
 (f) after the step (e), filling the first opening from which the part of the dummy pattern is removed with a first gate electrode; 
 (g) after the step (f), removing the dummy pattern remained in the first opening in the step (e); and 
 (h) filling the first opening from which the dummy pattern is removed in the step (g) with a second gate electrode. 
 
     
     
       2. The method of manufacturing a semiconductor device according  claim 1 ,
 wherein the step (a) further comprises a step of forming a protrusion which is a part of the semiconductor substrate, and protrudes from an upper surface of the semiconductor substrate by retreating a part of the upper surface of the semiconductor substrate, 
 wherein in the step (b), the first interlayer insulating film is formed so as to cover an upper and side surface of the protrusion, and 
 wherein in the step (c), the first opening is formed so as to open a part of the upper and side surface of the protrusion. 
 
     
     
       3. The method of manufacturing a semiconductor device according to  claim 2 , further comprising a step of forming an element isolation portion over the upper surface of the retreated semiconductor substrate between the step (a) and the step (b),
 wherein a position of the upper surface of the element isolation portion is lower than a position of the upper surface of the protrusion, 
 wherein, in a plan view, the first opening, the first gate electrode, and the second electrode extend in a first direction respectively, and 
 wherein the first and second gate electrode are formed on the upper and side surface of the protrusion and the element isolation portion. 
 
     
     
       4. The method of manufacturing a semiconductor device according to  claim 2 , further comprising a step of forming a first insulating film over the side surface of the protrusion between the step (b) and the step (c),
 wherein in the step (e) and (g), the side surface of the protrusion is protected by the first insulating film. 
 
     
     
       5. The method of manufacturing a semiconductor device according to  claim 2 , wherein the step (a) further comprises steps of:
 (a1) forming a first conductive film on the semiconductor substrate, 
 (a2) forming a second opening in the first conductive film, 
 (a3) inside the second opening, forming a second insulating film on a side surface of the first conductive film, 
 (a4) after the step (a3), removing the first conductive film, and 
 (a5) after the step (a4), forming the protrusion by echoing the semiconductor substrate by using the second insulating film as a mask. 
 
     
     
       6. The method of manufacturing a semiconductor device according to  claim 2 , wherein the step (a) further comprises steps of:
 (a6) forming a third insulating film on the semiconductor substrate, 
 (a7) forming a third opening in the third insulating film, 
 (a8) forming a second conductive film on a side surface of the third insulating film in the third opening, 
 (a9) forming a fourth insulating film on the third insulating film and the second conductive film so as to fill the third opening, 
 (a10) removing the fourth insulating film formed on the third insulating and the second conductive film so as to remain the second conductive film and the fourth insulating film formed in the third opening, 
 (a11) after the step (a10), removing the second conductive film, and 
 (a12) after the step (a11), forming the protrusion by echoing the semiconductor substrate by using the third and fourth insulating film as a mask. 
 
     
     
       7. The method of manufacturing a semiconductor device according to  claim 1 , further comprising steps of:
 between the step (e) and step (f), forming a first gate insulating film inside the first opening from which the part of the dummy pattern is removed; and 
 between the step (g) and step (h), forming a second gate insulating film inside the first opening from which the dummy pattern is removed in the step (g), 
 wherein, in the step (f), the first gate electrode is filled in the first opening via the first gate insulating film, and 
 wherein, in the step (g), the second gate electrode is filled in the first opening via the second gate insulating film. 
 
     
     
       8. The method of manufacturing a semiconductor device according to  claim 1 ,
 wherein, in the step (b), forming the first interlayer insulating film on the semiconductor substrate via the fourth insulating film into which an impurity having a first conductivity type is introduced, 
 wherein, in the step (c), forming the first opening on the first interlayer insulating film and the fourth insulating film, and 
 wherein, between the step (c) and the step (d), forming a first diffusion region on the semiconductor substrate by diffusing the impurity having the first conductivity from the fourth insulating film to the semiconductor substrate by performing heat treatment. 
 
     
     
       9. The method of manufacturing a semiconductor device according to  claim 1 , wherein the step (d) further comprises steps of:
 (d1) inside the first opening, forming a first dummy material on a first side surface of the first interlayer insulating film, and forming a second dummy material on a second side surface of the first interlayer insulating film, the second side surface being opposite to the first side surface, and 
 (d2) inside the first opening, by forming a third dummy material between the first dummy material and the second dummy material via a fifth insulating film, filling the first opening with the dummy pattern including the first dummy material, the second dummy material, the third dummy material, and the fifth insulating film. 
 
     
     
       10. The method of manufacturing a semiconductor device according to  claim 9 , wherein the step (d1) further comprises steps of:
 (d11) forming a third conductive film inside the first opening, and 
 (d12) forming the first and second dummy material being comprised of the third conductive film by an anisotropic etching process with the third conductive film. 
 
     
     
       11. The method of manufacturing a semiconductor device according to  claim 9 ,
 wherein in the step (e), the first dummy material is removed by an isotropic etching process by using the fifth insulating film between the first dummy material and the third dummy material as an etching stopper film, and 
 wherein in the step (g), the second dummy material, the third dummy material, and the fifth insulating film are removed. 
 
     
     
       12. The method of manufacturing a semiconductor device according to  claim 9 ,
 wherein in the step (e), the first and third dummy material are removed by an etching process on the fifth insulating film between the second dummy material and the third dummy material as an etching stopper film, and 
 wherein, in the step (g), the second dummy material and the fifth insulating film are removed. 
 
     
     
       13. The method of manufacturing a semiconductor device according to  claim 9 ,
 wherein the first opening comprises a plurality of replacement regions extending in a first direction, and a connection region extending in a second direction orthogonal to the first direction and connecting the plurality of replacement regions, 
 wherein in the step (d1), the first and second dummy material are formed in the plurality of the replacement regions, and a fourth dummy material integrated with the first dummy material and the second dummy material is formed in the connection region, 
 wherein in the step (d2), the third dummy material and the fifth insulating film are formed in the plurality of replacement regions and are not formed in the connection region, 
 wherein, between the step (d) and the step (e), further removing the fourth dummy material formed in the connection region, and filling the connection region from which the fourth dummy material is removed with a second interlayer insulating film. 
 
     
     
       14. The method of manufacturing a semiconductor device according to  claim 1 ,
 wherein in a plan view, the first opening comprises a plurality of replacement regions extending in a first direction, and a connection region extending in a second direction orthogonal to the first direction and connecting the plurality of replacement regions, 
 wherein in the step (d), the dummy pattern is formed in the plurality of the replacement regions and the connection region, and 
 wherein between the step (d) and the step (e), further removing the dummy pattern formed in the connection region, and filling the connection region from which the dummy pattern is removed with a third interlayer insulating film. 
 
     
     
       15. The method of manufacturing a semiconductor device according to  claim 1 ,
 wherein, in a plan view, the first opening has a replacement region extending in a first direction, and a first and second power supply region extending in the first direction and connecting to the replacement region, 
 wherein in the step (d), the dummy pattern is formed in the replacement region, the first power supply region, and the second power supply region, 
 wherein in the step (e), the dummy pattern in a part of the replacement region and in the first power supply region is removed, 
 wherein in the step (f), the first gate electrode is formed in the part of the replacement region and in the first power supply region is removed, 
 wherein in the step (g), the dummy pattern remained in the replacement region and the second power supply region in the step (e) is removed, 
 wherein in the step (h), the second gate electrode is formed in the replacement region and in the second power supply region where the dummy pattern is removed, and 
 wherein, in a second direction orthogonal to the first direction in a plan view, each of a width of the first and second power supply region is smaller than ½ of a width of the replacement region. 
 
     
     
       16. The method of manufacturing a semiconductor device according to  claim 1 , further comprising steps of:
 (i) after the step (h), removing the first interlayer insulating film; 
 (j) forming a sixth insulating film in which an impurity having a first conductivity type is introduced so as to be contact with the semiconductor substrate in a region from which the first interlayer insulating film is removed; and 
 (k) forming a second diffusion region on the semiconductor substrate by diffusing the impurity having the first conductivity from the sixth insulating film to the semiconductor substrate by performing heat treatment. 
 
     
     
       17. The method of manufacturing a semiconductor device according to  claim 1 , further comprising steps of:
 (l) after the step (h), removing the first interlayer insulating film; and 
 (m) forming a third diffusion region having the first conductive type in the semiconductor substrate by using an ion implantation method in the region where the first interlayer insulating film is removed.