Repeller, cathode, chamber wall and slit member for ion implanter and ion generating devices including the same

Abstract

Provided are elements for an ion implanter and an ion generating device including the same. The elements include a repeller, a cathode, a chamber wall, and a slit member constituting an arc chamber of an ion generating device for ion implantation used in the fabrication of a semiconductor device. A coating structure including a semicarbide layer is provided to each of the elements in order to stabilize the element against thermal deformation, protect the element from wear, and prevent a deposition product from being peeled off. The coating structure enables precise ion implantation without a change in the position of ion generation or distortion of the equipment. The coating structure allows electrons to be uniformly reflected into the arc chamber to increase the uniformity of plasma, resulting in an improvement in the dissociation efficiency of an ion source gas. The coating structure significantly improves the service life of the element compared to those of existing elements. Also provided are ion generating devices including the elements.

What is claimed is: 
     
       1. A chamber wall mounted inside an arc chamber of an ion generating device for an ion implanter to define a space where ions are generated wherein the chamber wall covers four sides of the arc chamber and its portion corresponding to at least one of the four sides of the arc chamber has a refractory metal material as a base material forming its shape and has a coating structure comprising a semicarbide layer on at least one surface of the base material,
 wherein the coating structure comprising a semicarbide layer comprises a refractory metal carbide structure in which a continuous or discontinuous refractory metal monocarbide layer is layered on a continuous or discontinuous refractory metal semicarbide layer. 
 
     
     
       2. The chamber wall according to  claim 1 , wherein the coating structure comprising a semicarbide layer comprises a refractory metal carbide structure in which a continuous or discontinuous layer having a hexagonal crystal structure is continuously or discontinuously layered on a continuous or discontinuous layer having at least one crystal structure selected from the group consisting of epsilon crystal structures and beta crystal structures. 
     
     
       3. The chamber wall according to  claim 1 , wherein when the ratio of the weight of a crystal structure constituting the refractory metal monocarbide layer (Wm) to the weight of a crystal structure constituting the refractory metal semicarbide layer (Ws) is defined as X (Wm/Ws), X is equal to or lower than 5 (where Wm and Ws are determined by multi-phase electron backscatter diffraction (EBSD) analysis). 
     
     
       4. The chamber wall according to  claim 1 , wherein the weight of the base material (Ww), the weight of a crystal structure constituting the refractory metal monocarbide layer (Wm), and the weight of a crystal structure constituting the refractory metal semicarbide layer (Ws) are in a ratio of 90-95:0.8-4:9.2-1 (Ww:Wm:Ws) (where Ww, Wm, and Ws are determined by multi-phase electron backscatter diffraction (EBSD) analysis). 
     
     
       5. The chamber wall according to  claim 1 , wherein the semicarbide coating layer has a minimum thickness of 2 μm and a maximum thickness of 300 μm. 
     
     
       6. An ion generating device comprising the chamber wall according to  claim 1 . 
     
     
       7. A slit member comprising a slit through which ion beams are emitted from an ion generating device for an ion implanter wherein a slit portion formed with the slit has a refractory metal material as a base material forming its shape and has a coating structure comprising a semicarbide layer on at least one surface of the base material,
 wherein the coating structure comprising a semicarbide layer comprises a refractory metal carbide structure in which a continuous or discontinuous refractory metal monocarbide layer is layered on a continuous or discontinuous refractory metal semicarbide layer. 
 
     
     
       8. The slit member according to  claim 7 , wherein the coating structure comprising a semicarbide layer comprises a refractory metal carbide structure in which a continuous or discontinuous layer having a hexagonal crystal structure is continuously or discontinuously layered on a continuous or discontinuous layer having at least one crystal structure selected from the group consisting of epsilon crystal structures and beta crystal structures. 
     
     
       9. The slit member according to  claim 7 , wherein when the ratio of the weight of a crystal structure constituting the refractory metal monocarbide layer (Wm) to the weight of a crystal structure constituting the refractory metal semicarbide layer (Ws) is defined as X (Wm/Ws), X is equal to or lower than 5 (where Wm and Ws are determined by multi-phase electron backscatter diffraction (EBSD) analysis). 
     
     
       10. The slit member according to  claim 7 , wherein the weight of the base material (Ww), the weight of a crystal structure constituting the refractory metal monocarbide layer (Wm), and the weight of a crystal structure constituting the refractory metal semicarbide layer (Ws) are in a ratio of 90-95:0.8-4:9.2-1 (Ww:Wm:Ws) (where Ww, Wm, and Ws are determined by multi-phase electron backscatter diffraction (EBSD) analysis). 
     
     
       11. The slit member according to  claim 7 , wherein the semicarbide coating layer has a minimum thickness of 2 μm and a maximum thickness of 300 μm. 
     
     
       12. An ion generating device comprising the slit member according to  claim 7 .