Microphone and manufacturing method therefor

Abstract

The present application teaches microphones and manufacturing methods therefor and relates to the field of semiconductor technologies. In some implementations, a method may include: providing a substrate structure, the substrate structure including a substrate and a first insulating layer covering a first part of the substrate; forming a first electrode plate layer, the first electrode plate layer covering a part of the first insulating layer; and forming a second insulating layer, the second insulating layer covering a part of a region of the first insulating layer which is not covered by the first electrode plate layer and a part of the first electrode plate layer, where when seen from the top, the first electrode plate layer and the second insulating layer form an angle, the angle exposes a second part of the substrate, and a degree θ of the angle is larger than or equal to 90° and is smaller than or equal to 180°. The present application can improve a problem of unexpected holes formed in the microphone.

What is claimed is: 
     
       1. A method for manufacturing a microphone, comprising:
 providing a substrate structure, the substrate structure comprising a substrate and a first insulating layer covering a first part of the substrate; 
 forming a first electrode plate layer, the first electrode plate layer covering a part of the first insulating layer; and 
 forming a second insulating layer, the second insulating layer covering a part of a region of the first insulating layer which is not covered by the first electrode plate layer and a part of the first electrode plate layer, 
 wherein when viewed from the top of the microphone, a border of the first electrode plate layer adjacent to a second part of the substrate not covered by the first insulating layer and a border of the second insulating layer adjacent to the second part of the substrate form an angle, and a degree θ of the angle is larger than or equal to 90° and is smaller than or equal to 180°. 
 
     
     
       2. The method according to  claim 1 , wherein θ is larger than 90° and is smaller than or equal to 180°. 
     
     
       3. The method according to  claim 1 , wherein forming a first electrode plate layer comprises:
 depositing a first electrode plate material layer on the substrate structure; 
 forming a first patterned mask layer on the first electrode plate material layer; and 
 etching the first electrode plate material layer using the first mask layer as a mask, where the residual first electrode plate material layer serves as the first electrode plate layer. 
 
     
     
       4. The method according to  claim 1 , wherein forming a second insulating layer comprises:
 depositing a second insulating material layer on the substrate structure on which the first electrode plate layer has been formed; 
 forming a second patterned mask layer on the second insulating material layer; and 
 etching the second insulating material layer using the second mask layer as a mask, where the residual second insulating material layer serves as the second insulating layer. 
 
     
     
       5. The method according to  claim 1 , further comprising:
 forming a second electrode plate layer on the second insulating layer; and 
 depositing a supporting layer, the supporting layer covering the substrate structure on which the second electrode plate layer has been formed. 
 
     
     
       6. The method according to  claim 5 , further comprising:
 forming a first through hole penetrating the supporting layer and the second electrode plate layer and a second through hole penetrating the substrate; and 
 removing a part of the first insulating layer and a part of the second insulating layer by wet-etching, so as to form a cavity between the first electrode plate layer and the second electrode plate layer. 
 
     
     
       7. The method according to  claim 5 , wherein
 materials of the first electrode plate layer and the second electrode plate layer comprise polycrystalline silicon; 
 materials of the first insulating layer and the second insulating layer comprise silicon oxides; and 
 a material of the supporting layer comprises silicon nitrides. 
 
     
     
       8. A microphone, comprising:
 a substrate structure, comprising:
 a substrate defining a through hole penetrating the substrate; 
 a first insulating layer covering a first part of the substrate; 
 a first electrode plate layer covering the through hole and a part of the first insulating layer; 
 a second insulating layer, covering a part of a region of the first insulating layer which is not covered by the first electrode plate layer, wherein when seen from the top of the microphone, a border of the first electrode plate layer adjacent to a second part of the substrate not covered by the first insulating layer and a border of the second insulating layer adjacent to the second part of the substrate form an angle, and a degree θ of the angle is larger than or equal to 90° and is smaller than or equal to 180°; and 
 a second electrode plate layer, located above the first electrode plate layer; and 
 
 a supporting layer, covering the substrate structure. 
 
     
     
       9. The microphone according to  claim 8 , wherein θ is larger than 90° and is smaller than or equal to 180°. 
     
     
       10. The microphone according to  claim 8 , wherein:
 materials of the first electrode plate layer and the second electrode plate layer comprise polycrystalline silicon; 
 materials of the first insulating layer and the second insulating layer comprise silicon oxides; and 
 a material of the supporting layer comprises silicon nitrides. 
 
     
     
       11. A method for manufacturing a microphone, comprising:
 providing a substrate structure, the substrate structure comprising a substrate and a first insulating layer covering a part of the substrate; 
 forming a first electrode plate layer, the first electrode plate layer covering a first part of the first insulating layer; and 
 forming a second insulating layer, the second insulating layer covering a part of a region of the first insulating layer which is not covered by the first electrode plate layer and a part of the first electrode plate layer, 
 wherein when seen from the top of the microphone, a border of the first electrode plate layer adjacent to a second part of the first insulating layer not covered by the first electrode plate layer or the second insulating layer and a border of the second insulating layer adjacent to the second part of the first insulating layer form an angle, and a degree θ of the angle is larger than or equal to 90° and is smaller than or equal to 180°. 
 
     
     
       12. A microphone, comprising:
 a substrate structure, comprising:
 a substrate defining a through hole penetrating the substrate; 
 a first insulating layer covering a part of the substrate; 
 a first electrode plate layer covering the through hole and a first part of the first insulating layer; 
 a second insulating layer, covering a part of a region of the first insulating layer which is not covered by the first electrode plate layer, wherein when seen from the top of the microphone, a border of the first electrode plate layer adjacent to a second part of the first insulating layer not covered by the first electrode plate layer or the second insulating layer and a border of the second insulating layer adjacent to the second part of the first insulating layer form an angle, and a degree θ of the angle is larger than or equal to 90° and is smaller than or equal to 180°; and 
 a second electrode plate layer located above the first electrode plate layer; and 
 
 a supporting layer, covering the substrate structure.