Methods and apparatuses for producing magnetoresistive apparatuses

Abstract

Methods and apparatuses for producing magneto resistive apparatuses are provided. Here, structures are formed for defining regions of the same magnetization, magnets are magnetized, and structures are formed within the magnets of the regions, for example, in order to define magneto resistive elements.

What is claimed is: 
     
       1. A method for producing a magneto resistive apparatus, comprising:
 structuring a substrate with defined regions, 
 magnetizing at least one layer in each of the defined regions with one of a plurality of magnetizations, wherein a magnetization in each defined region is the same throughout that defined region, and 
 subsequent to magnetizing, forming a plurality of magneto resistive structures within each of the defined regions, wherein forming the plurality of magneto resistive structures within each of the defined regions comprises further structuring the substrate within each of the defined regions such that at least a portion of the substrate is removed to define the plurality of magneto resistive structures as separate structures. 
 
     
     
       2. The method as in  claim 1 , wherein forming the plurality of magneto resistive structures within each of the defined regions comprises forming magneto resistive sensor elements. 
     
     
       3. The method as in  claim 1 , wherein the plurality of magneto resistive structures formed within each of the defined regions have a smallest dimension of less than 5 μm. 
     
     
       4. The method as in  claim 1 , wherein the defined regions have a smallest dimension of greater than 10 μm. 
     
     
       5. The method as in  claim 1 , further comprising:
 forming a magneto resistive layer stack that , includes the at least one layer, and 
 wherein structuring the substrate with the defined regions comprises structuring of the magneto resistive layer stack. 
 
     
     
       6. The method as in  claim 5 , wherein the structuring of the magneto resistive layer stack comprises forming trenches in the magneto resistive layer stack to define the defined regions. 
     
     
       7. The method as in  claim 6 , wherein each trench extends into the substrate and encircles one of the defined regions. 
     
     
       8. The method as in  claim 1 , wherein structuring the substrate with the defined regions comprises forming dielectric webs for restricting the defined regions, and
 wherein the method further comprises forming magneto resistive layer stacks in the defined regions. 
 
     
     
       9. The method as in  claim 1 , wherein magnetizing the at least one layer of the defined regions comprises magnetizing at least two of the defined regions with mutually different magnetizations. 
     
     
       10. The method as in  claim 1 , wherein magnetizing the at least one layer of the defined regions comprises magnetizing a reference layer. 
     
     
       11. The method as in  claim 1 , further comprising:
 depositing a dielectric layer after structuring the substrate with the defined regions and prior to magnetizing the at least one layer of the defined regions. 
 
     
     
       12. The method as in  claim 1 , wherein forming the plurality of magneto resistive structures within each of the defined regions comprises structuring magneto resistive layer stacks. 
     
     
       13. The method as in  claim 1 , wherein forming the plurality of magneto resistive structures within each of the defined regions comprises structuring electrodes for magneto resistive sensor elements. 
     
     
       14. The method as  claim 1 , wherein magnetizing comprises laser magnetizing. 
     
     
       15. The method as in  claim 1 , wherein each of the plurality of magneto resistive structures within each of the defined regions is a discrete magneto resistive sensor element. 
     
     
       16. The method as in  claim 1 , further comprising:
 depositing a passivation layer on each of the plurality of magneto resistive structures to separably encapsulate each of the plurality of magneto resistive structures. 
 
     
     
       17. The method as in  claim 1 , wherein:
 the substrate includes a magneto resistive layer stack including a reference layer as the at least one layer and a free layer, and 
 structuring the substrate with the defined regions comprises forming a plurality of trenches that extend entirely through the magneto resistive layer stack, wherein each of the plurality of trenches defines one of the defined regions. 
 
     
     
       18. The method as in  claim 17 , wherein further structuring the substrate within each of the defined regions comprises removing portions of the reference layer and the free layer in order to define the plurality of magneto resistive structures as separate structures. 
     
     
       19. The method as in  claim 17 , wherein each trench of the plurality of trenches encircles one of the defined regions. 
     
     
       20. A magneto resistive apparatus produced by a method, the method comprising:
 structuring a substrate with defined regions, 
 magnetizing at least one layer in each of the defined regions with one of a plurality of magnetizations, wherein a magnetization in each defined region is the same throughout that defined region, and 
 subsequent to magnetizing, forming a plurality of magneto resistive structures within each of the defined regions, wherein forming the plurality of magneto resistive structures within each of the defined regions comprises further structuring the substrate within each of the defined regions such that at least a portion of the substrate is removed to define the plurality of magneto resistive structures as separate structures. 
 
     
     
       21. The apparatus as in  claim 20 , wherein the magneto resistive apparatus comprises at least one of a giant magnetoresistance (GMR) apparatus, a tunneling magnetoresistance (TMR) apparatus, an anisotropic magnetoresistance (AMR) apparatus or a colossal magnetoresistance (CMR) apparatus. 
     
     
       22. The apparatus as in  claim 20 , wherein the plurality of magneto resistive structures are magneto resistive sensor elements. 
     
     
       23. The apparatus as in  claim 20 , wherein:
 the substrate includes a magneto resistive layer stack including a reference layer as the at least one layer and a free layer, and 
 structuring the substrate with the defined regions comprises forming a plurality of trenches that extend entirely through the magneto resistive layer stack, wherein each of the plurality of trenches defines one of the defined regions. 
 
     
     
       24. The apparatus as in  claim 23 , wherein further structuring the substrate within each of the defined regions comprises removing portions of the reference layer and the free layer in order to define the plurality of magneto resistive structures as separate structures.