Semiconductor device with heat radiator

Abstract

A first inner heat conductor may include a plurality of first graphite layers. A second inner heat conductor may include a plurality of second graphite layers. The plurality of first graphite layers may be stacked in a first direction which is orthogonal to a direction in which a semiconductor element and a first heat radiator are arranged. The plurality of second graphite layers may be stacked in the direction in which the semiconductor element and the first heat radiator are arranged, or may be stacked in a second direction which is orthogonal to the direction in which the semiconductor element and the first heat radiator are arranged and orthogonal to the first direction.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a semiconductor element; and 
 a first heat radiator connected to a first surface of the semiconductor element, 
 wherein 
 the first heat radiator comprises:
 a first outer heat conductor constituted of metal and connected to the first surface of the semiconductor element; 
 a first inner heat conductor disposed in the first outer heat conductor; and 
 a second inner heat conductor disposed in the first outer heat conductor and stacked on the first inner heat conductor in a direction in which the semiconductor element and the first heat radiator are arranged, 
 
 the first inner heat conductor comprises a plurality of first graphite layers, 
 the second inner heat conductor comprises a plurality of second graphite layers, 
 the plurality of first graphite layers is stacked in a first direction which is orthogonal to the direction in which the semiconductor element and the first heat radiator are arranged, and 
 the plurality of second graphite layers is stacked in the direction in which the semiconductor element and the first heat radiator are arranged, or is stacked in a second direction which is orthogonal to the direction in which the semiconductor element and the first heat radiator are arranged and orthogonal to the first direction. 
 
     
     
       2. The semiconductor device according to  claim 1 , further comprising:
 a second heat radiator connected to a second surface opposite to the first surface of the semiconductor element; 
 wherein 
 the second heat radiator comprises:
 a second outer heat conductor constituted of metal and connected to the second surface of the semiconductor element; 
 a third inner heat conductor disposed in the second outer heat conductor, and 
 a fourth inner heat conductor disposed in the second outer heat conductor and stacked on the third inner heat conductor in a direction in which the semiconductor element and the second heat radiator are arranged, 
 
 the third inner heat conductor comprises a plurality of third graphite layers, 
 the fourth inner heat conductor comprises a plurality of fourth graphite layers, 
 the plurality of third graphite layers is stacked in a third direction which is orthogonal to the direction in which the semiconductor element and the second heat radiator are arranged, and 
 the plurality of fourth graphite layers is stacked in the direction in which the semiconductor element and the second heat radiator are arranged, or is stacked in a fourth direction which is orthogonal to the direction in which the semiconductor element and the second heat radiator are arranged and orthogonal to the third direction. 
 
     
     
       3. The semiconductor device according to  claim 1 , further comprising:
 a second heat radiator connected to a second surface opposite to the first surface of the semiconductor element; 
 wherein the second heat radiator is a solid metal member. 
 
     
     
       4. The semiconductor device according to  claim 1 , wherein
 the semiconductor element, the first heat radiator and the second heat radiator are scaled by a sealing resin. 
 
     
     
       5. The semiconductor device according to  claim 1 , wherein
 the first outer heat conductor comprises a projection projecting outward.