Photovoltaic cell as energy source and data receiver

Abstract

A device including a combination photovoltaic device and optical receiver comprising a p-n junction of type III-V semiconductor material layers, wherein the p-n junction produces power in response to the application of a wavelength of light for powering an optical receiver provided by the p-n junction for receiving data. The device may further include a light emitting diode for transmitting data. The device can further include a processor coupled to a memory, the processor being configured to control the electrical communication with the light emitting diode and the combination photovoltaic device and optical receiver.

The invention claimed is: 
     
       1. A device comprising:
 a p-n junction of first type III-V semiconductor material layers, the p-n junction constructed from a single emitter layer and a single base layer, the single base layer in direct contact with a back surface field layer; 
 a window layer of a second type III-V semiconductor material on the light receiving end of the p-n junction, wherein the p-n junction produces power in response to the application of a wavelength of light for powering an optical receiver provided by the p-n junction; and 
 a first set of electrodes in direct contact with the window layer and a second set of electrodes in direct contact with a buffer layer, the buffer layer disposed between a substrate and the back surface field layer, 
 wherein the emitter layer has a thickness that is less than a thickness of the window layer and wherein the device provides a voltage at open circuit equal to 1.18 Volts. 
 
     
     
       2. The device of  claim 1 , wherein the single emitter layer has a thickness of 100 nm, the single base layer has a thickness of 1.5 μm, and the window layer has a thickness of 1 μm. 
     
     
       3. The device of  claim 1 , wherein the first set of electrodes are a bilayer of a III-V semiconductor material and a metal-containing layer. 
     
     
       4. The device of  claim 1 , wherein the window layer is composed of a same material as the back surface field layer. 
     
     
       5. The device of  claim 1 , wherein the emitter layer is comprised of a first gallium and arsenic containing layer doped to a first conductivity type that is in direct contact with the window layer; and the base layer is comprised of a second gallium and arsenic containing layer having a second conductivity type. 
     
     
       6. The device of  claim 1 , wherein the window layer is composed of a semiconductor material having a greater band gap than material layers of the p-n junction. 
     
     
       7. A device comprising:
 a combination photovoltaic device and optical receiver comprising a p-n junction of type III-V semiconductor material layers, wherein the p-n junction produces power in response to the application of a wavelength of light for powering an optical receiver provided by the p-n junction for receiving data, the p-n junction constructed from a single emitter layer and a single base layer, the single base layer in direct contact with a back surface field layer; 
 a light emitting diode for transmitting data; 
 a processor coupled to a memory, the processor being configured to control the electrical communication with the light emitting diode and the combination photovoltaic device and optical receiver; and 
 a first set of electrodes in direct contact with a window layer and a second set of electrodes in direct contact with a buffer layer, the buffer layer disposed between a substrate and the back surface field layer, 
 wherein the emitter layer has a thickness that is less than a thickness of the window layer and wherein the device provides a voltage at open circuit equal to 1.18 Volts. 
 
     
     
       8. The device of  claim 7 , wherein the single emitter layer has a thickness of 100 nm, the single base layer has a thickness of 1.5 μm, and the window layer has a thickness of 1 μm. 
     
     
       9. The device of  claim 7 , wherein the first set of electrodes are a bilayer of a III-V semiconductor material and a metal-containing layer. 
     
     
       10. The device of  claim 7 , wherein a power for said powering the optical receiver is 10 microwatt or less. 
     
     
       11. The device of  claim 7 , wherein the emitter layer is comprised of a first gallium and arsenic containing layer doped to a first conductivity type that is in direct contact with the window layer; and the base layer is comprised of a second gallium and arsenic containing layer having a second conductivity type. 
     
     
       12. The device of  claim 7 , wherein the window layer is composed of a same material as the back surface field layer. 
     
     
       13. A method for receiving optical data comprising:
 providing a material stack including p-n junction of type III-V semiconductor material layer having a microscale footprint on a supporting substrate, the p-n junction constructed from a single emitter layer and a single base layer, the single base layer in direct contact with a back surface field layer, and wherein the material stack provides a photovoltaic device and an optical receiver; 
 receiving a wavelength with the p-n junction, wherein the wavelength of light when absorbed by the p-n junction of the material stack provides a power via the photovoltaic device; 
 receiving optical signals with the optical receiver, wherein the optical receiver is powered by the power produced by the photovoltaic device; and 
 disposing a first set of electrodes in direct contact with a window layer and a second set of electrodes in direct contact with a buffer layer, the buffer layer disposed between a substrate and the back surface field layer, 
 wherein the emitter layer has a thickness that is less than a thickness of the window layer and wherein the photovoltaic device provides a voltage at open circuit equal to 1.18 Volts. 
 
     
     
       14. The method of  claim 13 , wherein the single emitter layer has a thickness of 100 nm, the single base layer has a thickness of 1.5 μm, and the window layer has a thickness of 1 μm. 
     
     
       15. The method of  claim 13 , wherein the first set of electrodes are a bilayer of a III-V semiconductor material and a metal-containing layer. 
     
     
       16. The method of  claim 13 , wherein a power for said powering the optical receiver is 10 microwatt or less. 
     
     
       17. The method of  claim 13 , wherein the emitter layer is comprised of a first gallium and arsenic containing layer doped to a first conductivity type that is in direct contact with the window layer; and the base layer is comprised of a second gallium and arsenic containing layer having a second conductivity type. 
     
     
       18. The method of  claim 13 , wherein the window layer is composed of a same material as the back surface field layer. 
     
     
       19. The method of  claim 13 , wherein a wavelength of light for the signal being received is different than the wavelength that provides said power via the photovoltaic device. 
     
     
       20. The method of  claim 13 , wherein a wavelength of light for the signal being received is the same as the wavelength that provides said power via the photovoltaic device.