Semiconductor device

Abstract

A semiconductor device includes a first electrode, a second electrode, a semiconductor element, an insulating layer and a third electrode. The semiconductor element is electrically connected to the first electrode and the second electrode. The third electrode is insulated from the semiconductor structure, the first electrode and the second electrode through the insulating layer. The semiconductor element includes a semiconductor structure, a carbon nanotube and a conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method or a coating method.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a first electrode, a second electrode, a semiconductor element, an insulating layer and a third electrode, wherein the semiconductor element is electrically connected to the first electrode and the second electrode, the third electrode is insulated from the semiconductor element, the first electrode and the second electrode through the insulating layer, the semiconductor element comprises:
 a semiconductor structure comprising a P-type semiconductor and an N-type semiconductor overlapped with each other and defining a first surface and a second surface; 
 a carbon nanotube located on the first surface of the semiconductor structure; 
 a conductive film located on the second surface of the semiconductor structure, wherein the conductive film is formed on the second surface by a depositing method or a coating method, the semiconductor structure is located between the carbon nanotube and the conductive film, and the carbon nanotube, the semiconductor structure and the conductive film are stacked with each other to form a multi-layered stereoscopic structure. 
 
 
     
     
       2. The semiconductor device of  claim 1 , wherein the carbon nanotube is a metallic carbon nanotube. 
     
     
       3. The semiconductor device of  claim 2 , wherein the carbon nanotube is a single-walled carbon nanotube, and the diameter of the carbon nanotube ranges from about 1 nanometer to about 5 nanometers. 
     
     
       4. The semiconductor device of  claim 1 , wherein a thickness of the semiconductor structure ranges from about 1 nanometer to about 200 nanometers. 
     
     
       5. The semiconductor device of  claim 1 , wherein a material of the P-type semiconductor or the N-type semiconductor is gallium arsenide, silicon carbide, polysilicon, monocrystalline silicon, naphthalene or molybdenum sulfide. 
     
     
       6. The semiconductor device of  claim 1 , wherein the conductive film is directly formed on the second surface by the depositing method, and the depositing method comprises ion sputtering or magnetron sputtering. 
     
     
       7. The semiconductor device of  claim 1 , wherein a thickness of the conductive film is in a range from 5 nanometers to 20 nanometers. 
     
     
       8. The semiconductor device of  claim 1 , wherein a cross-sectional area of the multi-layered stereoscopic structure is in a range from about 0.25 nm 2  to about 1000 nm 2 . 
     
     
       9. The semiconductor device of  claim 8 , wherein the cross-sectional area of the multi-layered stereoscopic structure is in a range from about 1 nm 2 to about 100 nm 2 . 
     
     
       10. The semiconductor device of  claim 1 , wherein the first surface of the semiconductor structure is a surface of the P-type semiconductor layer, the second surface of the semiconductor structure is a surface of the N-type semiconductor layer. 
     
     
       11. The semiconductor device of  claim 1 , wherein the first surface of the semiconductor structure is the surface of the N-type semiconductor layer, the second surface of the semiconductor structure is the surface of the P-type semiconductor layer. 
     
     
       12. The semiconductor device of  claim 1 , wherein the first electrode is electrically connected with the carbon nanotube, the second electrode is electrically connected with the conductive film. 
     
     
       13. The semiconductor device of  claim 1 , wherein the carbon nanotube is directly located on a surface of the insulating layer.