Inventor · disambiguated record

Konstantin V. Vassilievski

Also filed as: VASSILIEVSKI KONSTANTIN V

1 granted patent·79 citations·filing 2001–2001

52Inventor score

Technology areasH10D

Files withFOUNDATION FOR RES & TECHNOLOG1

Top patents by PatentIndex Score

1 record

0181US6599644B1Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicideFOUNDATION FOR RES & TECHNOLOG·Filed 2001·Granted Jul 29, 2003·79 cites·19 claims

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