Inventor · disambiguated record
Zhang Guowei
Also filed as: GUOWEI ZHANG
1 granted patent·1 pending application·0 citations·filing 2012–2013
7Inventor score
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2 records- 0137US9252213B2Integrated circuits with a buried N layer and methods for producing such integrated circuitsGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Feb 2, 2016·0 cites·14 claims
- 0225US2013277741A1Ldmos device with field effect structure to control breakdown voltage, and methods of making such a deviceGUOWEI ZHANG·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →