Inventor · disambiguated record
Tetsuro Aoyama
Also filed as: AOYAMA TETSURO
2 granted patents·1 pending application·0 citations·filing 2018–2019
21Inventor score
Technology areasC30B
Files withSHINETSU HANDOTAI KK3
Top patents by PatentIndex Score
3 records- 0151US11225729B2Method for manufacturing a silicon carbide single crystal by adjusting the position of a hole in a top of the growth container relative to the off angle of the silicon carbide substrateSHINETSU HANDOTAI KK·Filed 2019·Granted Jan 18, 2022·0 cites·4 claims
- 0250US11149357B2Method for manufacturing a silicon carbide single crystal by adjusting the position of a hole in a top of the growth container relative to the off angle of the silicon carbide substrateSHINETSU HANDOTAI KK·Filed 2018·Granted Oct 19, 2021·0 cites·4 claims
- 0347US2021115593A1Method and apparatus for manufacturing silicon carbide single crystalSHINETSU HANDOTAI KK·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →