Inventor · disambiguated record
Tae-Pok Rhee
Also filed as: RHEE TAE-POK
7 granted patents·2 pending applications·184 citations·filing 1995–2008
86Inventor score
Top patents by PatentIndex Score
9 records- 0188US6303971B1Inductor for semiconductor device and method for making the sameSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 16, 2001·78 cites·18 claims
- 0280US6365941B1Electro-static discharge circuit of semiconductor device, structure thereof and method for fabricating the structureSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 2, 2002·51 cites·49 claims
- 0369US5646054AMethod for manufacturing MOS transistor of high breakdown voltageSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jul 8, 1997·33 cites·4 claims
- 0453US5804863AField effect transistors including side branch grooves and fabrication methods thereforSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 8, 1998·13 cites·15 claims
- 0543US7033880B2Inductor for semiconductor device and method of making sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 25, 2006·2 cites·32 claims
- 0642US6060362AMethods of fabricating field effect transistors including side branch groovesSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 9, 2000·7 cites·7 claims
- 0734US8058127B2Manufacturing method of semiconductor power devicesRHEE TAE POK·Filed 2008·Granted Nov 15, 2011·0 cites·5 claims
- 0831US2007164355A1Semiconductor device of high breakdown voltage and manufacturing method thereofRHEE TAE-POK·Filed 2005·Application pending·0 cites
- 0928US2008001222A1Semiconductor Device Of High Breakdown Voltage And Manufacturing Method ThereofRHEE TAE-POK·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →