Inventor · disambiguated record
Tamas Horanyi
Also filed as: FERENCZI GYOERGY · HORANYI TAMAS S
2 granted patents·21 citations·filing 1992–1992
58Inventor score
Files withSEMICONDUCTOR PHYSICS LAB RT2
Top patents by PatentIndex Score
2 records- 0143US5580828AMethod for chemical surface passivation for in-situ bulk lifetime measurement of silicon semiconductor materialSEMICONDUCTOR PHYSICS LAB RT·Filed 1992·Granted Dec 3, 1996·18 cites·19 claims
- 0228US5300200AMethod for stabilizing the effective dissolution valence of silicon during electrochemical depth profilingSEMICONDUCTOR PHYSICS LAB RT·Filed 1992·Granted Apr 5, 1994·3 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →