Inventor · disambiguated record
Shyh-Chang Tsaur
Also filed as: TSAUR SHYH-CHANG
10 granted patents·311 citations·filing 1978–1983
91Inventor score
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10 records- 0192US4258466AHigh density electrically programmable ROMTEXAS INSTRUMENTS INC·Filed 1978·Granted Mar 31, 1981·58 cites·7 claims
- 0291US4561004AHigh density, electrically erasable, floating gate memory cellTEXAS INSTRUMENTS INC·Filed 1982·Granted Dec 24, 1985·83 cites·6 claims
- 0389US4377818AHigh density electrically programmable ROMTEXAS INSTRUMENTS INC·Filed 1980·Granted Mar 22, 1983·50 cites·3 claims
- 0485US4195357AMedian spaced dummy cell layout for MOS random access memoryTEXAS INSTRUMENTS INC·Filed 1978·Granted Mar 25, 1980·27 cites·6 claims
- 0575US4385432AClosely-spaced double level conductors for MOS read onlyTEXAS INSTRUMENTS INC·Filed 1978·Granted May 31, 1983·19 cites·7 claims
- 0672US4198697AMultiple dummy cell layout for MOS random access memoryTEXAS INSTRUMENTS INC·Filed 1978·Granted Apr 15, 1980·14 cites·6 claims
- 0770US4317272AHigh density, electrically erasable, floating gate memory cellTEXAS INSTRUMENTS INC·Filed 1979·Granted Mar 2, 1982·27 cites·6 claims
- 0862US4376983AHigh density dynamic memory cellTEXAS INSTRUMENTS INC·Filed 1980·Granted Mar 15, 1983·16 cites·15 claims
- 0947US4372031AMethod of making high density memory cells with improved metal-to-silicon contactsTEXAS INSTRUMENTS INC·Filed 1980·Granted Feb 8, 1983·9 cites·10 claims
- 1041US4536941AMethod of making high density dynamic memory cellKUO CHANG KIANG·Filed 1983·Granted Aug 27, 1985·8 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →