Inventor · disambiguated record
Shang-Hsuan Liu
Also filed as: LIU SHANG-HSUAN
9 granted patents·1 pending application·73 citations·filing 2002–2024
85Inventor score
Top patents by PatentIndex Score
10 records- 0188US8339884B2Low power and high speed sense amplifierHUANG YI-CHENG·Filed 2011·Granted Dec 25, 2012·18 cites·20 claims
- 0287US8964485B2Memory circuit with transistors having different threshold voltages and method of operating the memory circuitTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 24, 2015·11 cites·20 claims
- 0382US7202899B2Method to prevent white pixels in a CMOS image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 10, 2007·40 cites·19 claims
- 0457US8929137B2Operating method of memory having redundancy circuitryTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 6, 2015·1 cites·20 claims
- 0555US8238178B2Redundancy circuits and operating methods thereofYANG TIEN-CHUN·Filed 2010·Granted Aug 7, 2012·1 cites·19 claims
- 0647US2025232810A1Memory devices with dual-side discharge and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0746US9065324B2Electronic device with PVT delay compensation and related methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 23, 2015·1 cites·18 claims
- 0846US8670282B2Redundancy circuits and operating methods thereofYANG TIEN-CHUN·Filed 2012·Granted Mar 11, 2014·0 cites·20 claims
- 0946US7215583B2Circuit for inhibition of program disturbance in memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 8, 2007·1 cites·18 claims
- 1038US9812181B2Memory circuit with transistors having different threshold voltages and method of operating the memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 7, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →