Inventor · disambiguated record
Pragati Kumar
Also filed as: KUMAR PRAGATI
54 granted patents·2 pending applications·484 citations·filing 1999–2018
98Inventor score
Top patents by PatentIndex Score
56 records- 0198US8144498B2Resistive-switching nonvolatile memory elementsKUMAR PRAGATI·Filed 2008·Granted Mar 27, 2012·111 cites·9 claims
- 0297US8143092B2Methods for forming resistive switching memory elements by heating deposited layersKUMAR PRAGATI·Filed 2009·Granted Mar 27, 2012·92 cites·13 claims
- 0396US7863087B1Methods for forming resistive-switching metal oxides for nonvolatile memory elementsINTERMOLECULAR INC·Filed 2008·Granted Jan 4, 2011·25 cites·24 claims
- 0495US8318572B1Inexpensive electrode materials to facilitate rutile phase titanium oxideSHANKER SUNIL·Filed 2010·Granted Nov 27, 2012·18 cites·26 claims
- 0595US8294219B2Nonvolatile memory element including resistive switching metal oxide layersMALHOTRA SANDRA G·Filed 2008·Granted Oct 23, 2012·39 cites·15 claims
- 0693US8129704B2Non-volatile resistive-switching memoriesPHATAK PRASHANT·Filed 2008·Granted Mar 6, 2012·20 cites·3 claims
- 0793US8053364B2Closed-loop sputtering controlled to enhance electrical characteristics in deposited layerINTERMOLECULAR INC·Filed 2008·Granted Nov 8, 2011·18 cites·11 claims
- 0891US8415657B2Enhanced work function layer supporting growth of rutile phase titanium oxideRUI XIANGXIN·Filed 2010·Granted Apr 9, 2013·13 cites·12 claims
- 0991US8008096B2ALD processing techniques for forming non-volatile resistive-switching memoriesINTERMOLECULAR INC·Filed 2009·Granted Aug 30, 2011·16 cites·20 claims
- 1090US9362497B2Reduction of forming voltage in semiconductor devicesINTERMOLECULAR INC·Filed 2015·Granted Jun 7, 2016·6 cites·18 claims
- 1190US7977153B2Methods for forming resistive-switching metal oxides for nonvolatile memory elementsINTERMOLECULAR INC·Filed 2010·Granted Jul 12, 2011·7 cites·7 claims
- 1289US8551809B2Reduction of forming voltage in semiconductor devicesKUMAR PRAGATI·Filed 2009·Granted Oct 8, 2013·16 cites·18 claims
- 1389US8278735B2Yttrium and titanium high-k dielectric filmsHASHIM IMRAN·Filed 2010·Granted Oct 2, 2012·10 cites·22 claims
- 1488US8354702B1Inexpensive electrode materials to facilitate rutile phase titanium oxideELPIDA MEMORY INC·Filed 2010·Granted Jan 15, 2013·10 cites·20 claims
- 1586US9070867B2Non-volatile resistive-switching memoriesINTERMOLECULAR INC·Filed 2014·Granted Jun 30, 2015·5 cites·20 claims
- 1684US8481384B2Method for producing MIM capacitors with high K dielectric materials and non-noble electrodesCHEN HANHONG·Filed 2011·Granted Jul 9, 2013·6 cites·17 claims
- 1784US8367463B2Methods for forming resistive-switching metal oxides for nonvolatile memory elementsINTERMOLECULAR INC·Filed 2011·Granted Feb 5, 2013·4 cites·10 claims
- 1883US8737036B2Titanium based high-K dielectric filmsINTERMOLECULAR INC·Filed 2012·Granted May 27, 2014·4 cites·16 claims
- 1983US7968452B2Titanium-based high-K dielectric filmsINTERMOLECULAR INC·Filed 2009·Granted Jun 28, 2011·6 cites·20 claims
- 2082US9276211B2Non-volatile resistive-switching memoriesINTERMOLECULAR INC·Filed 2015·Granted Mar 1, 2016·2 cites·20 claims
- 2181US8809160B2Methods for forming high-K crystalline films and related devicesCHEN HANHONG·Filed 2011·Granted Aug 19, 2014·4 cites·20 claims
- 2280US8921156B2Non-volatile resistive-switching memoriesINTERMOLECULAR INC·Filed 2013·Granted Dec 30, 2014·3 cites·20 claims
- 2380US8873276B2Resistive-switching nonvolatile memory elementsINTERMOLECULAR INC·Filed 2013·Granted Oct 28, 2014·3 cites·20 claims
- 2479US8318573B2Nonvolatile memory elementsMALHOTRA SANDRA G·Filed 2011·Granted Nov 27, 2012·3 cites·16 claims
- 2578US8574956B2Method of forming non-volatile resistive-switching memoriesPHATAK PRASHANT·Filed 2011·Granted Nov 5, 2013·3 cites·9 claims
- 2677US8963117B2Reduction of forming voltage in semiconductor devicesINTERMOLECULAR INC·Filed 2013·Granted Feb 24, 2015·4 cites·17 claims
- 2777US8877550B2Methods for forming resistive switching memory elements by heating deposited layersKUMAR PRAGATI·Filed 2012·Granted Nov 4, 2014·2 cites·10 claims
- 2877US8828821B2Fabrication of semiconductor stacks with ruthenium-based materialsCHEN HANHONG·Filed 2009·Granted Sep 9, 2014·5 cites·14 claims
- 2975US8901708B2Yttrium and titanium high-k dielectric filmsINTERMOLECULAR INC·Filed 2012·Granted Dec 2, 2014·2 cites·13 claims
- 3075US8486727B2System and method for step coverage measurementCHEN HANHONG·Filed 2010·Granted Jul 16, 2013·3 cites·20 claims
- 3173US8551851B2Titanium-based high-K dielectric filmsCHEN HANHONG·Filed 2011·Granted Oct 8, 2013·2 cites·3 claims
- 3272US9029232B2Nonvolatile memory elementsINTERMOLECULAR INC·Filed 2014·Granted May 12, 2015·1 cites·20 claims
- 3370US8847190B2ALD processing techniques for forming non-volatile resistive switching memoriesINTERMOLECULAR INC·Filed 2013·Granted Sep 30, 2014·1 cites·19 claims
- 3470US8674479B2Method for producing MIM capacitors with high K dielectric materials and non-noble electrodesINTERMOLECULAR INC·Filed 2013·Granted Mar 18, 2014·2 cites·17 claims
- 3567US6833337B2Method for fabricating shaped monolithic ceramics and ceramic composites through displacive compensation of porosity, and ceramics and composites made therebyUNIV OHIO STATE·Filed 2002·Granted Dec 21, 2004·4 cites·26 claims
- 3664US9082782B2Inexpensive electrode materials to facilitate rutile phase titanium oxideINTERMOLECULAR INC·Filed 2012·Granted Jul 14, 2015·1 cites·16 claims
- 3763US8481338B2ALD processing techniques for forming non-volatile resistive-switching memoriesFUCHIGAMI NOBI·Filed 2011·Granted Jul 9, 2013·1 cites·20 claims
- 3862US8765567B2Nonvolatile memory elementsINTERMOLECULAR INC·Filed 2013·Granted Jul 1, 2014·0 cites·20 claims
- 3961US8623671B2ALD processing techniques for forming non-volatile resistive switching memoriesINTERMOLECULAR INC·Filed 2013·Granted Jan 7, 2014·0 cites·20 claims
- 4061US8524528B2Methods for forming resistive-switching metal oxides for nonvolatile memory elementsINTERMOLECULAR INC·Filed 2012·Granted Sep 3, 2013·0 cites·19 claims
- 4160US8592282B2Nonvolatile memory elementsINTERMOLECULAR INC·Filed 2012·Granted Nov 26, 2013·0 cites·19 claims
- 4259US9397292B2Methods for forming resistive switching memory elements by heating deposited layersINTERMOLECULAR INC·Filed 2014·Granted Jul 19, 2016·0 cites·19 claims
- 4359US8895951B2Closed loop sputtering controlled to enhance electrical characteristics in deposited layerFRENCH WAYNE R·Filed 2011·Granted Nov 25, 2014·1 cites·19 claims
- 4458US9030862B2Resistive-switching nonvolatile memory elementsINTERMOLECULAR INC·Filed 2014·Granted May 12, 2015·0 cites·20 claims
- 4557US9252360B2ALD processing techniques for forming non-volatile resistive switching memoriesINTERMOLECULAR INC·Filed 2014·Granted Feb 2, 2016·0 cites·19 claims
- 4657US8900422B2Yttrium and titanium high-K dielectric filmHASHIM IMRAN·Filed 2009·Granted Dec 2, 2014·0 cites·29 claims
- 4757US6407022B1Method for fabricating shaped monolithic ceramicsUNIV OHIO STATE RES FOUND·Filed 1999·Granted Jun 18, 2002·11 cites·26 claims
- 4856US8900418B2Yttrium and titanium high-k dielectric filmsINTERMOLECULAR INC·Filed 2012·Granted Dec 2, 2014·0 cites·15 claims
- 4955US8599603B2Resistive-switching nonvolatile memory elementsINTERMOLECULAR INC·Filed 2013·Granted Dec 3, 2013·0 cites·20 claims
- 5054US8975147B2Enhanced work function layer supporting growth of rutile phase titanium oxideINTERMOLECULAR INC·Filed 2012·Granted Mar 10, 2015·0 cites·19 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →