Inventor · disambiguated record
Marco Dallabora
Also filed as: DALLABORA MARCO · MACCALLI MARCO
44 granted patents·2 pending applications·773 citations·filing 1988–2021
98Inventor score
Top patents by PatentIndex Score
46 records- 0193US10083751B1Data state synchronizationMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 25, 2018·8 cites·24 claims
- 0291US5784314AMethod for setting the threshold voltage of a reference memory cellSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Jul 21, 1998·94 cites·11 claims
- 0390US4888497AGenerator of reset pulses upon the rise of the power supply for CMOS-type integrated circuitsSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Dec 19, 1989·46 cites·9 claims
- 0489US5717636AEEPROM memory with contactless memory cellsSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Feb 10, 1998·85 cites·39 claims
- 0585US10430085B2Memory operations on dataMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 1, 2019·3 cites·30 claims
- 0684US10977198B2Hybrid memory system interfaceMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 13, 2021·3 cites·21 claims
- 0783US10809942B2Latency-based storage in a hybrid memory systemMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 20, 2020·3 cites·17 claims
- 0883US10649665B2Data relocation in hybrid memoryMICRON TECHNOLOGY INC·Filed 2016·Granted May 12, 2020·3 cites·33 claims
- 0983US5917753ASensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cellsST MICROELECTRONICS SRL·Filed 1997·Granted Jun 29, 1999·48 cites·8 claims
- 1082US5754476ANegative charge pump circuit for electrically erasable semiconductor memory devicesSGS THOMSON MICROELECTRONICS·Filed 1996·Granted May 19, 1998·70 cites·22 claims
- 1181US6055187ASensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cellsST MICROELECTRONICS SRL·Filed 1998·Granted Apr 25, 2000·44 cites·20 claims
- 1280US5638327AFlash-EEPROM memory array and method for biasing the sameST MICROELECTRONICS SRL·Filed 1995·Granted Jun 10, 1997·49 cites·23 claims
- 1379US11340808B2Latency-based storage in a hybrid memory systemMICRON TECHNOLOGY INC·Filed 2020·Granted May 24, 2022·1 cites·19 claims
- 1479US11327892B2Latency-based storage in a hybrid memory systemMICRON TECHNOLOGY INC·Filed 2020·Granted May 10, 2022·1 cites·18 claims
- 1579US10705963B2Latency-based storage in a hybrid memory systemMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 7, 2020·2 cites·21 claims
- 1679US10705747B2Latency-based storage in a hybrid memory systemMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 7, 2020·2 cites·24 claims
- 1778US5999450AElectrically erasable and programmable non-volatile memory device with testable redundancy circuitsST MICROELECTRONICS SRL·Filed 1997·Granted Dec 7, 1999·44 cites·19 claims
- 1877US10261876B2Memory managementMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 16, 2019·3 cites·22 claims
- 1976US5633822AMethod of programming a nonvolatile flash-EEPROM memory array using source line switching transistorsST MICROELECTRONICS SRL·Filed 1995·Granted May 27, 1997·34 cites·3 claims
- 2075US6483750B2Flash EEPROM with on-chip erase source voltage generatorST MICROELECTRONICS SRL·Filed 2001·Granted Nov 19, 2002·20 cites·15 claims
- 2173US11886710B2Memory operations on dataMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 2272US5179300AData output stage having feedback loops to precharge the output nodeST MICROELECTRONICS SRL·Filed 1991·Granted Jan 12, 1993·25 cites·18 claims
- 2371US10157650B1Program operations in memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 18, 2018·2 cites·30 claims
- 2470US5784319AMethod for erasing an electrically programmable and erasable non-volatile memory cellSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Jul 21, 1998·30 cites·23 claims
- 2569US11550678B2Memory managementMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 10, 2023·0 cites·18 claims
- 2666US11835992B2Hybrid memory system interfaceMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 5, 2023·0 cites·17 claims
- 2766US5267202AReading device for EPROM memory cells with the operational field independent of the threshold jump of the written cells with respect to the virgin cellsSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Nov 30, 1993·25 cites·20 claims
- 2866US5258959AMemory cell reading circuitSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Nov 2, 1993·25 cites·20 claims
- 2965US10943659B2Data state synchronizationMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 9, 2021·0 cites·20 claims
- 3063US10956290B2Memory managementMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 23, 2021·0 cites·11 claims
- 3163US10916324B2Data state synchronization involving memory cells having an inverted data state written theretoMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 9, 2021·1 cites·28 claims
- 3262US11488681B2Data state synchronizationMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 1, 2022·0 cites·20 claims
- 3362US11209986B2Memory operations on dataMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 28, 2021·0 cites·19 claims
- 3460US5587946AMethod of reading, erasing and programming a nonvolatile flash-EEPROM memory arrray using source line switching transistorsST MICROELECTRONICS SRL·Filed 1994·Granted Dec 24, 1996·17 cites·4 claims
- 3559US2020233585A1Data relocation in hybrid memoryMICRON TECHNOLOGY INC·Filed 2020·Application pending·0 cites
- 3659US2020409607A1Hybrid memory systemMICRON TECHNOLOGY INC·Filed 2020·Application pending·0 cites
- 3757US5926059AStacked Charge pump circuitSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Jul 20, 1999·20 cites·17 claims
- 3857US5721707AErase voltage control circuit for an electrically erasable non-volatile memory cellSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Feb 24, 1998·17 cites·23 claims
- 3956US6195290B1Method of avoiding disturbance during the step of programming and erasing an electrically programmable, semiconductor non-volatile storage deviceST MICROELECTRONICS SRL·Filed 1999·Granted Feb 27, 2001·16 cites·10 claims
- 4054US6195291B1Flash EEPROM with on-chip erase source voltage generatorST MICROELECTRONICS SRL·Filed 1996·Granted Feb 27, 2001·13 cites·27 claims
- 4152US10573383B2Data state synchronizationMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 25, 2020·0 cites·20 claims
- 4250US10600456B2Program operations in memoryMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 24, 2020·0 cites·19 claims
- 4350US5541880AReference signal generating method and circuit for differential evaluation of the content of nonvolatile memory cellsST MICROELECTRONICS SRL·Filed 1995·Granted Jul 30, 1996·12 cites·22 claims
- 4448US11456033B2Dedicated commands for memory operationsMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 27, 2022·0 cites·19 claims
- 4543US10622065B2Dedicated commands for memory operationsMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 14, 2020·0 cites·27 claims
- 4640US5854764ASectorized electrically erasable and programmable non-volatile memory device with redundancySGS THOMSON MICROELECTRONICS·Filed 1997·Granted Dec 29, 1998·7 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →